Department of Electronic Engineering

Research Output

1994
20 Citations (Scopus)

Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M. & Hida, H., 1994 Dec 1, p. 51-54. 4 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)
1993

0.6V supply voltage 0.25 μm E/D-HJFET(IS3T) LSI technology for low power consumption and high speed LSIs

Hida, H., Tokushima, M., Maeda, T., Ishikawa, M., Fukaishi, M., Numata, K. & Ohno, Y., 1993 Dec 1, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Anon (ed.). Publ by IEEE, p. 197-200 4 p. (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

A 7-Mask CMOS Process with Selective Oxide Deposition

Horiuchi, T., Homma, T., Murao, Y. & Okumura, K., 1993 Aug, In : IEEE Transactions on Electron Devices. 40, 8, p. 1455-1460 6 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

A finite-element analysis of transient vibration of an ultrasonic welding tool

Koike, Y. & Ueha, S., 1993 May, In : Japanese Journal of Applied Physics. 32, 5S, p. 2426-2429 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

A Selective SiO2 Film-Formation Technology Using Liquid-Phase Deposition for Fully Planarized Multilevel Interconnections

Homma, T., Katoh, T., Yamada, Y. & Murao, Y., 1993 Aug, In : Journal of the Electrochemical Society. 140, 8, p. 2410-2414 5 p.

Research output: Contribution to journalArticle

65 Citations (Scopus)

A Spin-On-Glass Film Treatment Technology Using a Fluoroalkoxysilane Vapor at Room Temperature

Homma, T. & Murao, Y., 1993 Jul, In : Journal of the Electrochemical Society. 140, 7, p. 2046-2051 6 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
23 Citations (Scopus)

Focusing type high power transducer using burst drive for ultrasonic welding

Kurosawa, M., Nakazawa, K., Koike, Y. & Ueha, S., 1993 Jan 1, Proceedings of the IEEE Ultrasonics Symposium. Publ by IEEE, p. 401-404 4 p. (Proceedings of the IEEE Ultrasonics Symposium; vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

Kikuta, K., Nakajima, T., Ueno, K. & Kikkawa, T., 1993 Dec 1, Technical Digest - International Electron Devices Meeting. Anon (ed.). Publ by IEEE, p. 285-288 4 p. (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs

Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H. & Ohno, Y., 1993 Dec 1, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Anon (ed.). Publ by IEEE, p. 75-78 4 p. (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Stability of a new polyimide siloxane film as interlayer dielectrics of ULSI multilevel interconnections

Homma, T., Kutsuzawa, Y., Kunimune, K. & Murao, Y., 1993 Nov 25, In : Thin Solid Films. 235, 1-2, p. 80-85 6 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Study on time-length processing by neural networks

Kanoh, S., Futami, R. & Hoshimiya, N., 1993 Dec 1, Proceedings of the International Joint Conference on Neural Networks. Publ by IEEE, p. 151-154 4 p. (Proceedings of the International Joint Conference on Neural Networks; vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
1992

Low power consumption 16:1 MUX/DMUX for the STM-16 transmission systems based on DMT DCFL circuits

Fujii, M., Tokushima, M., Ishikawa, M., Fukaishi, M., Maeda, T., Hida, H., Ohno, Y. & Takano, I., 1992 Jul 1, NEC Research and Development. 3 ed. Vol. 33. p. 313-323 11 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)
1991

Amplitude distribution control of ultrasonic vibration tools with a 2-D extended radiation surface

Koike, Y., Kurosawa, M., Ueha, S. & Adachi, K., 1991 Jan 1, In : Proceedings - IEEE Ultrasonics Symposium. p. 983-986 4 p., 234262.

Research output: Contribution to journalConference article

1 Citation (Scopus)

Fully planarized multilevel interconnection using selective SiO2 deposition

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1991 Jul 1, In : NEC Research and Development. 32, 3, p. 315-322 8 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Hybrid transducer type ultrasonic linear motor using flexural vibrator

Kurosawa, M., Nishita, K., Koike, Y. & Ueha, S., 1991 Jan, In : Japanese Journal of Applied Physics. 30, p. 209-211 3 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Novel slip-free rapid thermal annealing of GaAs in vacuum with excellent uniformity and reproducibility

Kohno, M., Hida, H., Ogawa, Y., Fujii, M., Maeda, T., Ohata, K. & Tsukada, Y., 1991 Dec 1, In : Journal of Applied Physics. 69, 3, p. 1294-1299 6 p.

Research output: Contribution to journalArticle

1990

A new interlayer formation technology for completely planarized multilevel interconnection by using LPD

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1990 Dec 1, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 3-4 2 p., 5727439.

Research output: Contribution to journalConference article

12 Citations (Scopus)

Epitaxial Al Schottky contacts formed on (111) GaAs

Ueno, K., Yoshida, T. & Hirose, K., 1990 Dec 1, In : Applied Physics Letters. 56, 22, p. 2204-2206 3 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Low temperature interlayer formation technology using a new siloxane polymer film

Suzuki, M., Homma, T. & Numasawa, Y., 1990 Dec 1, p. 173-179. 7 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)
1989

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

Mikagi, K., Homma, T., Katoh, T., Tsunenari, K. & Murao, Y., 1989 Dec 1, p. 33-39. 7 p.

Research output: Contribution to conferencePaper

4 Citations (Scopus)
1988

GaAs buffering circuit ISI for ultra-fast data processing systems

Maeda, T., Miyatake, Y., Tomonoh, Y., Asai, S., Ishikawa, M., Nakaizumi, K., Ohno, Y., Ohno, N. & Furutsuka, T., 1988 Dec 1, p. 139-142. 4 p.

Research output: Contribution to conferencePaper

2 Citations (Scopus)

New polyimide film paves way for super high-speed logic devices

Homma, T., Numasawa, Y., Murao, Y. & Hamano, K., 1988 Nov 1, In : JEE. Journal of electronic engineering. 25, 263, p. 74-79 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection.

Homma, T., Eguchi, K., Numasawa, Y., Kikkawa, T., Hokari, Y. & Hamano, K., 1988, p. 279-285. 7 p.

Research output: Contribution to conferencePaper

6 Citations (Scopus)

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Ueno, K., Hida, H., Ogawa, Y., Tsukada, Y. & Nozaki, T., 1988 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 846-849 4 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)
1987

GAAS 8 multiplied by 8 MATRIX SWITCH LSI FOR HIGH-SPEED DIGITAL COMMUNICATIONS.

Hayano, S. I., Nagashima, K., Asai, S., Maeda, T. & Furutsuka, T., 1987 Dec 1, p. 245-248. 4 p.

Research output: Contribution to conferencePaper

12 Citations (Scopus)
1985

CML GAAS 4KB SRAM.

Takahashi, K., Maeda, T., Katano, F., Furutsuka, T. & Higashisaka, A., 1985 Dec 1, In : Digest of Technical Papers - IEEE International Solid-State Circuits Conference. p. 68-69, 308

Research output: Contribution to journalConference article

5 Citations (Scopus)

HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).

Ueno, K., Furutsuka, T., Kanamori, M. & Higashisaka, A., 1985, Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, p. 405-408 4 p. (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS.

Ueno, K., Furutsuka, T., Toyoshima, H., Kanamori, M. & Higashisaka, A., 1985 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 82-85 4 p.

Research output: Contribution to journalConference article

12 Citations (Scopus)
1984

NEW TRENCH ISOLATION TECHNOLOGY AS A REPLACEMENT OF LOCOS.

Mikoshiba, H., Homma, T. & Hamano, K., 1984 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 578-581 4 p.

Research output: Contribution to journalConference article

10 Citations (Scopus)
1983

A numerical model of selective meltback morphology on InP

Pak, K., Maeda, T., Nishinaga, T., Nakamura, T. & Yasuda, Y., 1983 Dec 2, In : Journal of Crystal Growth. 65, 1-3, p. 602-606 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

NUMERICAL MODEL OF SELECTIVE MELTBACK MORPHOLOGY ON InP.

Pak, K., Maeda, T., Nishinaga, T., Nakamura, T. & Yasuda, Y., 1983 Dec 1, p. 602-606. 5 p.

Research output: Contribution to conferencePaper