Department of Electronic Engineering

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11 Citations (Scopus)

Formation of an n-GaAs/n-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma

Niwa, T., Furuhata, N. & Maeda, T., 1997 May, In : Journal of Crystal Growth. 175-176, PART 1, p. 441-446 6 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Fully planarized multilevel interconnection using selective SiO2 deposition

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1991 Jul 1, In : NEC Research and Development. 32, 3, p. 315-322 8 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

GaN-based optoelectronic devices on sapphire and Si substrates

Umeno, M., Egawa, T. & Ishikawa, H., 2001 Dec 1, In : Materials Science in Semiconductor Processing. 4, 6, p. 459-466 8 p.

Research output: Contribution to journalArticle

32 Citations (Scopus)
1 Citation (Scopus)

GaN MESFETs on (111) Si substrate grown by MOCVD

Egawa, T., Nakada, N., Ishikawa, H. & Umeno, M., 2000 Oct 12, In : Electronics Letters. 36, 21, p. 1816-1818 3 p.

Research output: Contribution to journalArticle

40 Citations (Scopus)

GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Jiang, H., Okui, A., Ishikawa, H., Shao, C. L., Egawa, T. & Jimbo, T., 2002 Jan 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 1 A/B, p. L34-L36

Research output: Contribution to journalArticle

5 Citations (Scopus)

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Ishikawa, H., Zhao, G. Y., Nakada, N., Egawa, T., Jimbo, T. & Umeno, M., 1999 May 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 5 PART 2, p. 492-494 3 p.

Research output: Contribution to journalArticle

186 Citations (Scopus)

Garnet photonics toward developing laser diode integrated with optical isolator with Si guiding layer

Yokoi, H., Igarashi, S., Uchiumi, Y. & Tani, K., 2011 Mar 1, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 3, p. 1071-1074 4 p.

Research output: Contribution to journalArticle

Grain growth enhancement of electroplated copper film by supercritical annealing

Ueno, K., Shimada, Y., Yomogida, S., Akahori, S., Yamamoto, T., Yamaguchi, T., Aoki, Y., Matsuyama, A., Yata, T. & Hashimoto, H., 2010 May 1, In : Japanese Journal of Applied Physics. 49, 5 PART 3, p. 05FA081-05FA086

Research output: Contribution to journalArticle

2 Citations (Scopus)

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Dec 1, In : Journal of Crystal Growth. 259, 3, p. 245-251 7 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2003 Oct, In : IEICE Transactions on Electronics. E86-C, 10, p. 2077-2081 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 Sep 1, In : Journal of Crystal Growth. 244, 1, p. 6-11 6 p.

Research output: Contribution to journalArticle

51 Citations (Scopus)

Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

Zhao, G. Y., Adachi, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 Oct 2, In : Applied Physics Letters. 77, 14, p. 2195-2197 3 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Heat-Resistant co-w catalytic metals for multilayer graphene chemical vapor deposition

Ueno, K., Karasawa, Y., Kuwahara, S., Baba, S., Hanai, H., Yamazaki, Y., Sakuma, N., Kajita, A. & Sakai, T., 2013 Apr 1, In : Japanese Journal of Applied Physics. 52, 4 PART 2, 04CB04.

Research output: Contribution to journalArticle

5 Citations (Scopus)
10 Citations (Scopus)

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 Sep 6, In : Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

Research output: Contribution to journalArticle

87 Citations (Scopus)

Highly efficient GaN-based light emitting diodes with micropits

Hao, M., Egawa, T. & Ishikawa, H., 2006 Dec 29, In : Applied Physics Letters. 89, 24, 241907.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Aug 1, In : Journal of Applied Physics. 94, 3, p. 1662-1666 5 p.

Research output: Contribution to journalArticle

41 Citations (Scopus)

Highly Selective Photoresist Ashing by Addition of Ammonia to Plasma Containing Carbon Tetrafluoride

Saito, M., Eto, H., Omiya, K., Homma, T. & Nagatomo, T., 2001 Dec 1, In : Journal of the Electrochemical Society. 148, 2, p. G59-G62

Research output: Contribution to journalArticle

3 Citations (Scopus)

High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Dec 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 3 A, p. 1035-1038 4 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

Egawa, T., Zhang, B. & Ishikawa, H., 2005 Mar 1, In : IEEE Electron Device Letters. 26, 3, p. 169-171 3 p.

Research output: Contribution to journalArticle

70 Citations (Scopus)

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 Jun 10, In : Electronics Letters. 40, 12, p. 775-776 2 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M. & Oda, O., 2003 Oct, In : IEICE Transactions on Electronics. E86-C, 10, p. 2071-2076 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

High-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Nov 1, In : Physica Status Solidi (A) Applied Research. 200, 1, p. 36-39 4 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

High-speed rotating-disk chemical vapor deposition process for in-situ arsenic-doped polycrystalline silicon films

Terai, F., Kobayashi, H., Katsui, S., Tamaoki, N., Nagatomo, T. & Homma, T., 2005 Nov 9, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 11, p. 7883-7888 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 Mar 25, In : Applied Physics Letters. 80, 12, p. 2186-2188 3 p.

Research output: Contribution to journalArticle

82 Citations (Scopus)

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 Mar 15, In : Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Nov 1, In : Physica Status Solidi (A) Applied Research. 200, 1, p. 187-190 4 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Holding characteristics of planar objects suspended by near-field acoustic levitation

Matsuo, E., Koike, Y., Nakamura, K., Ueha, S. & Hashimoto, Y., 2000 Mar, In : Ultrasonics. 38, 1, p. 60-63 4 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)

Humidity reliability of commercial flash memories for long-term storage

Murota, T., Mimura, T., Gomasang, P., Yokogawa, S. & Ueno, K., 2020 Jul 1, In : Japanese Journal of Applied Physics. 59, SL, SLLC01.

Research output: Contribution to journalArticle

Open Access
1 Citation (Scopus)

Hybrid transducer type ultrasonic linear motor using flexural vibrator

Kurosawa, M., Nishita, K., Koike, Y. & Ueha, S., 1991 Jan, In : Japanese Journal of Applied Physics. 30, p. 209-211 3 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Hydrogen evolution from cathodically charged titanium aluminide alloy Ti-24Al-11Nb

Takasaki, A. & Homma, T., 2002 Jun 26, In : Journal of Alloys and Compounds. 340, 1-2, p. 127-131 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Image correction method for the chemical imaging sensor

Miyamoto, K. I., Sugawara, Y., Kanoh, S., Yoshinobu, T., Wagner, T. & Schöning, M. J., 2010 Feb 17, In : Sensors and Actuators, B: Chemical. 144, 2, p. 344-348 5 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 Sep 1, In : Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 Apr 3, In : Applied Physics Letters. 76, 14, p. 1804-1806 3 p.

Research output: Contribution to journalArticle

103 Citations (Scopus)

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 Aug 5, In : Applied Physics Letters. 81, 6, p. 1131-1133 3 p.

Research output: Contribution to journalArticle

60 Citations (Scopus)

Improved heat treatment for wafer direct bonding between semiconductors and magnetic garnets

Yokoi, H., Mizumoto, T., Maru, K. & Naito, Y., 1997 May 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 5 A, p. 2784-2787 4 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 Apr, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)

Improvement of multilayer graphene crystallinity by solid-phase precipitation with current stress application during annealing

Uddin, M. S., Ichikawa, H., Sano, S. & Ueno, K., 2016 Jan 1, In : Japanese Journal of Applied Physics. 55, 6S3, 06JH02.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Improvement of multilayer graphene quality by current stress during thermal CVD

Razak, L. A., Tobino, D. & Ueno, K., 2014 May 25, In : Microelectronic Engineering. 120, p. 200-204 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Improving landmark detection accuracy for self-localization through baseboard recognition

Premachandra, C., Murakami, M., Gohara, R., Ninomiya, T. & Kato, K., 2017 Dec 1, In : International Journal of Machine Learning and Cybernetics. 8, 6, p. 1815-1826 12 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
17 Citations (Scopus)

Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

Kuroda, N., Kitayama, T., Nishi, Y., Saiki, K., Yokoi, H., Watanabe, J., Cho, M., Egawa, T. & Ishikawa, H., 2006 Feb 8, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 646-650 5 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. & Umeno, M., 2002 Jan 1, In : Journal of Applied Physics. 91, 1, p. 528-530 3 p.

Research output: Contribution to journalArticle

63 Citations (Scopus)

InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

Zhang, B. J., Egawa, T., Ishikawa, H., Nishikawa, N., Jimbo, T. & Umeno, M., 2001 Nov 1, In : Physica Status Solidi (A) Applied Research. 188, 1, p. 151-154 4 p.

Research output: Contribution to journalArticle

22 Citations (Scopus)

Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques

Homma, T., 1996 May 15, In : Thin Solid Films. 278, 1-2, p. 28-31 4 p.

Research output: Contribution to journalArticle

47 Citations (Scopus)

Integration of microfabricated needle-type glucose sensor devices with a novel thin-film Ag/AgCl electrode and plasma-polymerized thin film: Mass production techniques

Hiratsuka, A., Kojima, K. I., Suzuki, H., Muguruma, H., Ikebukuro, K. & Karube, I., 2001 Jan 1, In : Analyst. 126, 5, p. 658-663 6 p.

Research output: Contribution to journalArticle

32 Citations (Scopus)