Department of Electronic Engineering

Research Output

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Article
2005

Plasma emission spectrochemical analysis of the surface state of particles in a suspension system

Kobayashi, K., Sato, A., Homma, T. & Nagatomo, T., 2005 Feb 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 2, p. 1027-1030 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
3 Citations (Scopus)

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H. & Egawa, T., 2005 Oct 1, In : IEEE Transactions on Electron Devices. 52, 10, p. 2124-2128 5 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)
30 Citations (Scopus)

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 Oct 1, In : Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 Jun 24, In : Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27, p. L812-L815

Research output: Contribution to journalArticle

22 Citations (Scopus)

Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Balachander, K., Arulkumaran, S., Ishikawa, H., Baskar, K. & Egawa, T., 2005 Jan 1, In : Physica Status Solidi (A) Applications and Materials Science. 202, 2, p. R16-R18

Research output: Contribution to journalArticle

50 Citations (Scopus)
32 Citations (Scopus)

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 Feb 14, In : Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.

Research output: Contribution to journalArticle

33 Citations (Scopus)
2004
20 Citations (Scopus)

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Sun, Y., Egawa, T. & Ishikawa, H., 2004 Sep 1, In : Journal of Applied Physics. 96, 5, p. 2586-2591 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

A Thin-Film Glucose Biosensor Based on Hexamethyldisiloxane Plasma-Polymerized Film: Influence of Its Film Thickness on the Platinum Electrode

Kase, Y., Muguruma, H., Hiratsuka, A. & Karube, I., 2004 Feb, In : IEICE Transactions on Electronics. E87-C, 2, p. 142-147 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

Jiang, H., Egawa, T., Ishikawa, H., Dou, Y., Shao, C. & Jlmbo, T., 2004 Jul 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 7 A, p. 4101-4104 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
8 Citations (Scopus)

Carrier-envelope-phase stabilized chirped-pulse amplification system scalable to higher pulse energies

Kakehata, M., Takada, H., Kobayashi, Y., Torizuka, K., Takamiya, H., Nishijima, K., Homma, T., Takahashi, H., Okubo, K., Nakamura, S. & Koyamada, Y., 2004 May, In : Optics Express. 12, 10, p. 2070-2080 11 p.

Research output: Contribution to journalArticle

58 Citations (Scopus)
20 Citations (Scopus)

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 Mar 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 3 A, p. L334-L336

Research output: Contribution to journalArticle

3 Citations (Scopus)

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 Dec 6, In : Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
22 Citations (Scopus)

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 Mar 1, In : IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 Sep 1, In : Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
1 Citation (Scopus)

Fabrication of semiconductor laser for integration with optical isolator

Sakurai, K., Yokoi, H., Mizumoto, T., Miyashita, D. & Nakano, Y., 2004 Apr, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 A, p. 1388-1392 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
11 Citations (Scopus)
1 Citation (Scopus)

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 Sep 6, In : Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

Research output: Contribution to journalArticle

87 Citations (Scopus)

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 Jun 10, In : Electronics Letters. 40, 12, p. 775-776 2 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 Mar 15, In : Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 Sep 1, In : Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 Apr, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)
17 Citations (Scopus)

Interferometric optical isolator employing a nonreciprocal phase shift operated in a unidirectional magnetic field

Yokoi, H., Shoji, Y., Shin, E. & Mizumoto, T., 2004 Aug 20, In : Applied Optics. 43, 24, p. 4745-4752 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)
3 Citations (Scopus)

MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 293-299 7 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

Liu, Y., Egawa, T., Jiang, H., Zhang, B., Ishikawa, H. & Hao, M., 2004 Dec 13, In : Applied Physics Letters. 85, 24, p. 6030-6032 3 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

New inductively coupled plasma system using divided antenna for photoresist ashing

Terai, F., Kobayashi, H., Iyanagi, K., Yamage, M., Nagatomo, T. & Homma, T., 2004 Sep 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 9 A, p. 6392-6398 7 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Optical and color stabilities of paint-on resins for shade modification of restorative resins

Arikawa, H., Kanie, T., Fujii, K., Ban, S., Homma, T. & Takahashi, H., 2004 Jun, In : Dental Materials Journal. 23, 2, p. 155-160 6 p.

Research output: Contribution to journalArticle

Open Access
19 Citations (Scopus)

Organic plasma process for simple and substrate-independent surface modification of polymeric BioMEMS devices

Hiratsuka, A., Muguruma, H., Lee, K. H. & Karube, I., 2004 Jul 15, In : Biosensors and Bioelectronics. 19, 12, p. 1667-1672 6 p.

Research output: Contribution to journalArticle

45 Citations (Scopus)

Plasma-polymerized thin film for biosensors of a new generation

Muguruma, H. & Hiratsuka, A., 2004 May 1, In : Bunseki Kagaku. 53, 5, p. 393-409 17 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Pyroelectricity in polyurea thin film with oligothiophene segments in the main chain prepared by vapor deposition polymerization

Muguruma, H., Ishikawa, M., Nakada, J., Hotta, S. & Takahashi, Y., 2004 Jul 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 7 A, p. L859-L861

Research output: Contribution to journalArticle

8 Citations (Scopus)

Route to design electric fields of optical pulses: A combination of a pulse shaper and a carrier-envelope-phase stabilized chirped-pulse amplifier system

Kakehata, M., Takada, H., Kobayashi, Y., Torizuka, K., Nishijima, K., Takamiya, H., Homma, T. & Takahashi, H., 2004 Dec 1, In : Springer Series in Chemical Physics. 79, p. 88-90 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Sequential grouping of tone sequence as reflected by the mismatch negativity

Kanoh, S., Futami, R. & Hoshimiya, N., 2004 Dec 1, In : Biological Cybernetics. 91, 6, p. 388-395 8 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Sano, Y., 2004 Jan 26, In : Applied Physics Letters. 84, 4, p. 613-615 3 p.

Research output: Contribution to journalArticle

162 Citations (Scopus)

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Miura, N., Nanjo, T., Suita, M., Oishi, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2004 May 1, In : Solid-State Electronics. 48, 5, p. 689-695 7 p.

Research output: Contribution to journalArticle

140 Citations (Scopus)

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2004 Mar 15, In : Journal of Applied Physics. 95, 6, p. 3170-3174 5 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)
13 Citations (Scopus)

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Jiang, H., Egawa, T., Ishikawa, H., Shao, C. & Jimbo, T., 2004 May 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 5 B, p. L683-L685

Research output: Contribution to journalArticle

19 Citations (Scopus)

Zn ion implantation along the c axis for formation of highly resistive GaN layers

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 Jan 1, In : Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.

Research output: Contribution to journalArticle

Open Access
2003