Department of Electronic Engineering

Research Output

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Letter
2003
54 Citations (Scopus)
31 Citations (Scopus)
2002

Characteristics of BCl3 plasma-etched GaN Schottky diodes

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 Apr 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 4, p. L493-L495

Research output: Contribution to journalLetter

14 Citations (Scopus)

Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Egawa, T., Moku, T., Ishikawa, H., Ohtsuka, K. & Jimbo, T., 2002 Jun 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 6 B, p. L663-L664

Research output: Contribution to journalLetter

103 Citations (Scopus)
2001

High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2001 Oct 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 10 B, p. L1081-L1083

Research output: Contribution to journalLetter

11 Citations (Scopus)

Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure

Ishikawa, H., Nakada, N., Mori, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 Nov 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 11 A, p. L1170-L1172

Research output: Contribution to journalLetter

11 Citations (Scopus)