Research Output per year
Research Output
2017
Improving performance of phase shift pulse BOTDR
Shibata, R., Kasahara, H., Elias, L. P. & Horiguchi, T., 2017, In : IEICE Electronics Express. 14, 11, 20170267.Research output: Contribution to journal › Letter
7
Citations
(Scopus)
2013
Pneumatic micro dispenser system for ubiquitous microchemical devices
Hasegawa, T., Omatsu, F. & Ikuta, K., 2013 Jun, In : Journal of Robotics and Mechatronics. 25, 4, p. 619-622 4 p.Research output: Contribution to journal › Letter
2
Citations
(Scopus)
2011
Pulse compression of linear chirp signals using a quadrature detector
Aziz, N. M. K. B. A., Kurabayashi, H. & Tanaka, N., 2011 Nov 21, In : Acoustical Science and Technology. 32, 6, p. 261-263 3 p.Research output: Contribution to journal › Letter
2
Citations
(Scopus)
2003
High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer
Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2003 Mar 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 42, 3 A, p. L226-L228Research output: Contribution to journal › Letter
54
Citations
(Scopus)
Raman gain distribution measurement employing reference optical fiber
Toge, K., Hogari, K. & Horiguchi, T., 2003 Nov, In : IEICE Transactions on Communications. E86-B, 11, p. 3293-3295 3 p.Research output: Contribution to journal › Letter
Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition
Nakada, N., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Feb 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 42, 2 B, p. L144-L146Research output: Contribution to journal › Letter
31
Citations
(Scopus)
2002
Characteristics of BCl3 plasma-etched GaN Schottky diodes
Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 Apr 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 4, p. L493-L495Research output: Contribution to journal › Letter
14
Citations
(Scopus)
Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition
Egawa, T., Moku, T., Ishikawa, H., Ohtsuka, K. & Jimbo, T., 2002 Jun 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 6 B, p. L663-L664Research output: Contribution to journal › Letter
103
Citations
(Scopus)
2001
Guest-induced diminishment in fluorescence quenching and molecule sensing ability of a novel cyclodextrin-peptide conjugate [7]
Hossain, M. A., Hamasaki, K., Takahashi, K., Mihara, H. & Ueno, A., 2001 Oct 1, In : Journal of the American Chemical Society. 123, 30, p. 7435-7436 2 p.Research output: Contribution to journal › Letter
41
Citations
(Scopus)
High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate
Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2001 Oct 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 10 B, p. L1081-L1083Research output: Contribution to journal › Letter
11
Citations
(Scopus)
Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure
Ishikawa, H., Nakada, N., Mori, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 Nov 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 11 A, p. L1170-L1172Research output: Contribution to journal › Letter
11
Citations
(Scopus)
1995
A Flux-Based Study of Carrier Transport in Thin-Base Diodes and Transistors
Tanaka, S. & Lundstrom, M. S., 1995 Oct, In : IEEE Transactions on Electron Devices. 42, 10, p. 1806-1815 10 p.Research output: Contribution to journal › Letter
17
Citations
(Scopus)