Fingerprint Dive into the research topics where Hiroyasu Ishikawa is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Engineering & Materials Science
Sapphire
High electron mobility transistors
Metallorganic chemical vapor deposition
Substrates
Light emitting diodes
Heterojunctions
Transconductance
Metallorganic vapor phase epitaxy
Semiconductor quantum wells
Two dimensional electron gas
Full width at half maximum
Metals
Distributed Bragg reflectors
Current density
MESFET devices
Epilayers
Carrier concentration
Drain current
Hall mobility
Gates (transistor)
Diodes
Temperature
Organic chemicals
Photoluminescence
Bending (forming)
Electron mobility
Annealing
Dark currents
Leakage currents
Chemical vapor deposition
Chemical beam epitaxy
Photodiodes
Rapid thermal annealing
Electric potential
Growth temperature
Photodetectors
Electrodes
Electron beams
Optoelectronic devices
Cracks
Atomic force microscopy
Crystals
Epitaxial layers
Semiconductor materials
Etching
Sheet resistance
Field effect transistors
Gallium nitride
X rays
Atmospheric pressure
Physics & Astronomy
Chemistry and Materials
sapphire
vapor phase epitaxy
epitaxy
porous silicon
Engineering
high electron mobility transistors
light emitting diodes
transconductance
Schottky diodes
Bragg reflectors
field effect transistors
annealing
electron mobility
etching
photometers
capacitance
x rays
direct current
electrical measurement
electrical faults
traps
photodiodes
electrodes
General
metalorganic chemical vapor deposition
templates
electron gas
metals
leakage
ellipsometry
wafers
electric contacts
insertion
atomic force microscopy
passivity
cracks
caps
quaternary alloys
curves
output
buffers
Physics
quantum wells
photoluminescence
electric potential
electron beams
optical properties
current density
room temperature
reflectance
temperature
Aerospace Sciences
ultraviolet emission
Chemical Compounds
Aluminum Oxide
Substrates
High electron mobility transistors
Metallorganic chemical vapor deposition
Light emitting diodes
Heterojunctions
Metallorganic vapor phase epitaxy
Full width at half maximum
Semiconductor quantum wells
Transconductance
Distributed Bragg reflectors
Metals
Epilayers
aluminum gallium nitride
Gates (transistor)
Diodes
Hall mobility
Bending (forming)
Carrier concentration
Current density
Leakage currents
Temperature
Field effect transistors
Annealing
Electron mobility
Two dimensional electron gas
Photoluminescence
Rapid thermal annealing
Drain current
MESFET devices