Engineering & Materials Science
Sapphire
High electron mobility transistors
Metallorganic chemical vapor deposition
Substrates
Heterojunctions
Semiconductor quantum wells
Light emitting diodes
Metallorganic vapor phase epitaxy
Two dimensional electron gas
Transconductance
Full width at half maximum
Distributed Bragg reflectors
Epilayers
Metals
Carrier concentration
Current density
Organic chemicals
Gates (transistor)
Annealing
Diodes
Temperature
Drain current
Dark currents
Chemical vapor deposition
Growth temperature
Rapid thermal annealing
Electron mobility
Electron beams
Chemical beam epitaxy
Leakage currents
Photodiodes
Atomic force microscopy
Photodetectors
Electrodes
Epitaxial layers
Quantum efficiency
Characterization (materials science)
Optoelectronic devices
Semiconductor materials
Crystals
Etching
Sheet resistance
Wavelength
X rays
Atmospheric pressure
Gallium nitride
Physics & Astronomy
sapphire
high electron mobility transistors
metalorganic chemical vapor deposition
light emitting diodes
quantum wells
transconductance
templates
Schottky diodes
vapor phase epitaxy
Bragg reflectors
characterization
electron gas
field effect transistors
photoluminescence
metals
electric potential
annealing
wafers
electron mobility
leakage
ellipsometry
current density
electric contacts
electron beams
insertion
etching
atomic force microscopy
room temperature
passivity
x rays
optical properties
caps
capacitance
photometers
output
Chemical Compounds
aluminum gallium nitride
Aluminum Oxide
Metallorganic chemical vapor deposition
Substrates
High electron mobility transistors
Heterojunctions
Semiconductor quantum wells
Light emitting diodes
Metallorganic vapor phase epitaxy
Full width at half maximum
Distributed Bragg reflectors
Hall mobility
Transconductance
Epilayers
Carrier concentration
Metals
Photoluminescence
Two dimensional electron gas
Gates (transistor)
Current density
Diodes
Characterization (materials science)
Temperature
Annealing
Leakage currents
Rapid thermal annealing
Electron beams
Field effect transistors