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Research Output 1995 2018

  • 5092 Citations
  • 40 h-Index
  • 166 Article
  • 16 Conference contribution
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Conference contribution
2005
1 Citation (Scopus)

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2005, Physica Status Solidi C: Conferences. 7 ed. Vol. 2. p. 2623-2626 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

high electron mobility transistors
output
electric potential
transconductance
electrical faults
2 Citations (Scopus)

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H. & Egawa, T., 2005, ECS Transactions. Wang, J. J., Fitch, R. C. & Fen, R. (eds.). 2 ed. Vol. 1. p. 259-265 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Electrodes
Substrates
Cutoff frequency
Contact resistance
2004

GaN-based optoelectronic devices on Si grown by MOCVD

Ishikawa, H. & Egawa, T., 2004, Proceedings - Electrochemical Society. Buckley, D. N., Chang, P. C., Fox, P. D., Chan, W. K. & Shiojima, K. (eds.). Vol. 2. p. 34-38 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic chemical vapor deposition
Optoelectronic devices
Light emitting diodes
High electron mobility transistors
Transconductance
1 Citation (Scopus)

GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor

Hao, M., Ishikawa, H., Zhang, B. & Egawa, T., 2004, Physica Status Solidi C: Conferences. 10 ed. Vol. 1. p. 2397-2400 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

craters
sapphire
light emitting diodes
reactors
vapor phases
1 Citation (Scopus)

Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004, Technical Digest - International Electron Devices Meeting, IEDM. p. 1031-1034 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hall mobility
Metallorganic vapor phase epitaxy
Drain current
Transconductance
High electron mobility transistors
2 Citations (Scopus)

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. p. 193-196 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic vapor phase epitaxy
High electron mobility transistors
Sapphire
Heterojunctions
Hall mobility
2003
2 Citations (Scopus)

Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE

Miyoshi, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2091-2094 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic vapor phase epitaxy
Aluminum Oxide
Electron mobility
Drain current
Transconductance
8 Citations (Scopus)

Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer

Ishikawa, H., Kato, M., Hao, M. S., Egawa, T. & Jimbo, T., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2177-2180 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Full width at half maximum
Bending (forming)
wafers
Substrates
Crystallization
5 Citations (Scopus)

InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition

Zhang, B., Egawa, T., Liu, Y., Ishikawa, H. & Jimbo, T., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2244-2247 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Semiconductor quantum wells
metalorganic chemical vapor deposition

Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method

Sakai, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2412-2415 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bending (forming)
Metallorganic vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
insertion
2001

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H. & Umeno, M., 2001, Annual Device Research Conference Digest. p. 91-92 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconducting gallium compounds
High electron mobility transistors
Silicon carbide
Epitaxial layers
Metallorganic chemical vapor deposition
3 Citations (Scopus)

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T. & Umeno, M., 2001, Annual Device Research Conference Digest. p. 81-82 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gates (transistor)
High electron mobility transistors
Sapphire
Substrates
Reactive ion etching

Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H. & Jimbo, T., 2001, Technical Digest - International Electron Devices Meeting. p. 205-208 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic chemical vapor deposition
Semiconductor quantum wells
Light emitting diodes
Electric current control
Full width at half maximum
1999
4 Citations (Scopus)

Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1999, Technical Digest - International Electron Devices Meeting. IEEE, p. 401-404 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic chemical vapor deposition
High electron mobility transistors
Sapphire
Two dimensional electron gas
Transconductance
1997
1 Citation (Scopus)

Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T. & Umeno, M., 1997, Materials Research Society Symposium - Proceedings. Phillpot, S. R., Bristowe, P. D., Stroud, D. G. & Smith, J. R. (eds.). MRS, Vol. 482. p. 1101-1106 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Diodes
Transconductance
3 Citations (Scopus)

Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1997, Materials Research Society Symposium - Proceedings. Ponce, F. A., Moustakas, T. D., Akasaki, I. & Monemar, B. A. (eds.). Materials Research Society, Vol. 449. p. 1191-1196 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Light emitting diodes
Degradation