• 5226 Citations
  • 40 h-Index
19952018

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High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 Dec 1, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. p. 193-196 4 p. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

High performance AlGaN/GaN HEMTs with recessed gate

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T. & Jimbo, T., 2002 Jan 1, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1511-1514 4 p. (Materials Science Forum; vol. 389-393).

Research output: Chapter in Book/Report/Conference proceedingConference contribution