• 5237 Citations
  • 40 h-Index
19952018

Research output per year

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Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H. & Umeno, M., 2001 Jan 1, p. 91-92. 2 p.

Research output: Contribution to conferencePaper

GaN-based optoelectronic devices on Si grown by MOCVD

Ishikawa, H. & Egawa, T., 2004 Oct 28, p. 34-38. 5 p.

Research output: Contribution to conferencePaper

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T. & Umeno, M., 2001 Jan 1, p. 81-82. 2 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)