• 5269 Citations
  • 40 h-Index
19952018

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Article
2018
2017

Novel inkjet printing system and formation mechanism of PdO nanofilms for field-emission imaging devices

Kondo, H., Sato, T., Yamabe, J. & Ishikawa, H., 2017 Jul 21, In : Journal of Physics D: Applied Physics. 50, 32, 325106.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2016

Surface potential and topography measurements of gallium nitride on sapphire by scanning probe microscopy

Uruma, T., Satoh, N. & Ishikawa, H., 2016, In : IEEJ Transactions on Sensors and Micromachines. 136, 4, p. 96-101 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2011

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

Ishikawa, H. & Shimanaka, K., 2011 Jan 15, In : Journal of Crystal Growth. 315, 1, p. 196-199 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2008

MOCVD growth of c-axis oriented GaN on (110) Si substrates

Ishikawa, H., Shimanaka, K., Hiromori, K., Mori, N. & Morimoto, T., 2008 Jul 1, In : Default journal. p. Tu-58

Research output: Contribution to journalArticle

17 Citations (Scopus)

MOCVD growth of GaN on porous silicon substrates

Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y. & Nakanishi, M., 2008 Nov 15, In : Journal of Crystal Growth. 310, 23, p. 4900-4903 4 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)
2007

GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si

Ishikawa, H., Jimbo, T. & Egawa, T., 2007 Sep 1, In : Default journal. p. MM3

Research output: Contribution to journalArticle

2006

Al composition dependent properties of quaternary AlInGaN Schottky diodes

Liu, Y., Jiang, H., Egawa, T., Zhang, B. & Ishikawa, H., 2006, In : Journal of Applied Physics. 99, 12, 123702.

Research output: Contribution to journalArticle

9 Citations (Scopus)

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Jiang, H., Egawa, T. & Ishikawa, H., 2006 Jun 15, In : IEEE Photonics Technology Letters. 18, 12, p. 1353-1355 3 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Highly efficient GaN-based light emitting diodes with micropits

Hao, M., Egawa, T. & Ishikawa, H., 2006 Dec 29, In : Applied Physics Letters. 89, 24, 241907.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

Kuroda, N., Kitayama, T., Nishi, Y., Saiki, K., Yokoi, H., Watanabe, J., Cho, M., Egawa, T. & Ishikawa, H., 2006 Feb 8, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 646-650 5 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate

Liu, Y., Egawa, T., Jiang, H., Zhang, B. & Ishikawa, H., 2006 Jul 7, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 7, p. 5728-5731 4 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

Arulkumaran, S., Egawa, T., Selvaraj, L. & Ishikawa, H., 2006 Mar 10, In : Japanese Journal of Applied Physics, Part 2: Letters. 45, 8-11, p. L220-L223

Research output: Contribution to journalArticle

13 Citations (Scopus)

Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate

Liu, Y., Egawa, T., Jiang, H., Hayashi, M. & Ishikawa, H., 2006 Oct 1, In : Default journal. p. MoP2-55

Research output: Contribution to journalArticle

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Miyoshi, M., Egawa, T. & Ishikawa, H., 2006 Sep 1, In : Solid-State Electronics. 50, 9-10, p. 1515-1521 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
2005

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2005 Nov 7, In : Physica Status Solidi C: Conferences. 2, 7, p. 2623-2626 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 Sep 8, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6490-6494 5 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T. & Oda, O., 2005 Sep 1, In : Jpn. J. Appl. Phys.. Vol. 44, p. 6490-6493

Research output: Contribution to journalArticle

24 Citations (Scopus)

Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

Liu, Y., Jiang, H., Arulkumaran, S., Egawa, T., Zhang, B. & Ishikawa, H., 2005 Jul 4, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 223510.

Research output: Contribution to journalArticle

46 Citations (Scopus)

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon

Arulkumaran, S., Egawa, T., Matsui, S. & Ishikawa, H., 2005 Mar 21, In : Applied Physics Letters. 86, 12, p. 1-3 3 p., 123503.

Research output: Contribution to journalArticle

88 Citations (Scopus)

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

Egawa, T., Zhang, B. & Ishikawa, H., 2005 Mar 1, In : IEEE Electron Device Letters. 26, 3, p. 169-171 3 p.

Research output: Contribution to journalArticle

70 Citations (Scopus)

Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition

Hao, M., Egawa, T. & Ishikawa, H., 2005 Dec 15, In : Journal of Crystal Growth. 285, 4, p. 466-472 7 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

Miyoshi, M., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 Sep 15, In : Journal of Applied Physics. 98, 6, 063713.

Research output: Contribution to journalArticle

33 Citations (Scopus)

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H. & Egawa, T., 2005 Oct 1, In : IEEE Transactions on Electron Devices. 52, 10, p. 2124-2128 5 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)
30 Citations (Scopus)

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 Oct 1, In : Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 Jun 24, In : Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27, p. L812-L815

Research output: Contribution to journalArticle

23 Citations (Scopus)

Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Balachander, K., Arulkumaran, S., Ishikawa, H., Baskar, K. & Egawa, T., 2005 Jan 1, In : Physica Status Solidi (A) Applications and Materials Science. 202, 2, p. R16-R18

Research output: Contribution to journalArticle

50 Citations (Scopus)
32 Citations (Scopus)

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 Feb 14, In : Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.

Research output: Contribution to journalArticle

33 Citations (Scopus)
2004

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Sun, Y., Egawa, T. & Ishikawa, H., 2004 Sep 1, In : Journal of Applied Physics. 96, 5, p. 2586-2591 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

Jiang, H., Egawa, T., Ishikawa, H., Dou, Y., Shao, C. & Jlmbo, T., 2004 Jul 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 7 A, p. 4101-4104 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
20 Citations (Scopus)

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 May 1, In : Default journal.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 Mar 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 3 A, p. L334-L336

Research output: Contribution to journalArticle

3 Citations (Scopus)

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 Dec 6, In : Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
22 Citations (Scopus)

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 Mar 1, In : IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

Research output: Contribution to journalArticle

29 Citations (Scopus)

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 Sep 1, In : Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
11 Citations (Scopus)

GaN-based light-emitting diodes on Si substrates

Ishikawa, H. & Egawa, T., 2004 Dec 1, In : Default journal.

Research output: Contribution to journalArticle

1 Citation (Scopus)

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 Sep 6, In : Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

Research output: Contribution to journalArticle

87 Citations (Scopus)

High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M. & Shibata, T., 2004 Sep 1, In : Default journal. 85, p. 1710-1712

Research output: Contribution to journalArticle

87 Citations (Scopus)

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 Jun 10, In : Electronics Letters. 40, 12, p. 775-776 2 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B. & Hao, M., 2004 May 1, In : Default journal.

Research output: Contribution to journalArticle