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Research Output 1995 2018

  • 5100 Citations
  • 40 h-Index
  • 166 Article
  • 16 Conference contribution
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Article
2018
Phosphors
Light emitting diodes
Color
Coatings
Powders
nozzles
slits
Nozzles
Drying
emitters
2017
1 Citation (Scopus)

Novel inkjet printing system and formation mechanism of PdO nanofilms for field-emission imaging devices

Kondo, H., Sato, T., Yamabe, J. & Ishikawa, H., 2017 Jul 21, In : Journal of Physics D: Applied Physics. 50, 32, 325106.

Research output: Contribution to journalArticle

printing
Field emission
Printing
field emission
Imaging techniques
2016

Surface potential and topography measurements of gallium nitride on sapphire by scanning probe microscopy

Uruma, T., Satoh, N. & Ishikawa, H., 2016, In : IEEJ Transactions on Sensors and Micromachines. 136, 4, p. 96-101 6 p.

Research output: Contribution to journalArticle

Scanning probe microscopy
Gallium nitride
Crystal defects
Surface potential
Surface topography
2011
7 Citations (Scopus)

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

Ishikawa, H. & Shimanaka, K., 2011 Jan 15, In : Journal of Crystal Growth. 315, 1, p. 196-199 4 p.

Research output: Contribution to journalArticle

Substrates
recesses
Cathodoluminescence
Metallorganic chemical vapor deposition
cathodoluminescence
2010
8 Citations (Scopus)

Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

Ishikawa, H., Shimanaka, K., Amir, M. A. B. M., Hara, Y. & Nakanishi, M., 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 7-8, p. 2049-2051 3 p.

Research output: Contribution to journalArticle

porous silicon
metalorganic chemical vapor deposition
voids
cracks
mirrors
2008
20 Citations (Scopus)

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Ishikawa, H., Jimbo, T. & Egawa, T., 2008, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 5, 6, p. 2086-2088 3 p.

Research output: Contribution to journalArticle

Bragg reflectors
light emitting diodes
retarding
output

MOCVD growth of c-axis oriented GaN on (110) Si substrates

Ishikawa, H., Shimanaka, K., Hiromori, K., Mori, N. & Morimoto, T., 2008 Jul 1, In : Default journal. p. Tu-58

Research output: Contribution to journalArticle

19 Citations (Scopus)

MOCVD growth of GaN on porous silicon substrates

Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y. & Nakanishi, M., 2008 Nov 15, In : Journal of Crystal Growth. 310, 23, p. 4900-4903 4 p.

Research output: Contribution to journalArticle

Porous silicon
Metallorganic chemical vapor deposition
porous silicon
metalorganic chemical vapor deposition
Substrates
2007

GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si

Ishikawa, H., Jimbo, T. & Egawa, T., 2007 Sep 1, In : Default journal. p. MM3

Research output: Contribution to journalArticle

2006
8 Citations (Scopus)

Al composition dependent properties of quaternary AlInGaN Schottky diodes

Liu, Y., Jiang, H., Egawa, T., Zhang, B. & Ishikawa, H., 2006, In : Journal of Applied Physics. 99, 12, 123702.

Research output: Contribution to journalArticle

Schottky diodes
electrical measurement
capacitance
heterojunctions
inhomogeneity
10 Citations (Scopus)

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Jiang, H., Egawa, T. & Ishikawa, H., 2006 Jun 15, In : IEEE Photonics Technology Letters. 18, 12, p. 1353-1355 3 p.

Research output: Contribution to journalArticle

Dark currents
Photodiodes
Quantum efficiency
photodiodes
Current density
15 Citations (Scopus)

Highly efficient GaN-based light emitting diodes with micropits

Hao, M., Egawa, T. & Ishikawa, H., 2006, In : Applied Physics Letters. 89, 24, 241907.

Research output: Contribution to journalArticle

light emitting diodes
quantum efficiency
templates
photoluminescence
transmission electron microscopy
8 Citations (Scopus)

Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

Kuroda, N., Kitayama, T., Nishi, Y., Saiki, K., Yokoi, H., Watanabe, J., Cho, M., Egawa, T. & Ishikawa, H., 2006 Feb 8, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 646-650 5 p.

Research output: Contribution to journalArticle

Sapphire
Crystal lattices
sapphire
Infrared radiation
Crystals
8 Citations (Scopus)

Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate

Liu, Y., Egawa, T., Jiang, H., Zhang, B. & Ishikawa, H., 2006 Jul 7, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 7, p. 5728-5731 4 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Sapphire
sapphire
field effect transistors
Density of gases
13 Citations (Scopus)
recesses
High electron mobility transistors
high electron mobility transistors
caps
Etching

Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate

Liu, Y., Egawa, T., Jiang, H., Hayashi, M. & Ishikawa, H., 2006 Oct 1, In : Default journal. p. MoP2-55

Research output: Contribution to journalArticle

19 Citations (Scopus)

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Miyoshi, M., Egawa, T. & Ishikawa, H., 2006 Sep, In : Solid-State Electronics. 50, 9-10, p. 1515-1521 7 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
Two dimensional electron gas
augmentation
2005
24 Citations (Scopus)

DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 Sep 8, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6490-6494 5 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Sapphire
sapphire
templates
24 Citations (Scopus)

DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T. & Oda, O., 2005 Sep 1, In : Jpn. J. Appl. Phys.. Vol. 44, p. 6490-6493

Research output: Contribution to journalArticle

46 Citations (Scopus)

Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

Liu, Y., Jiang, H., Arulkumaran, S., Egawa, T., Zhang, B. & Ishikawa, H., 2005, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 223510.

Research output: Contribution to journalArticle

sapphire
field effect transistors
modulation
transconductance
electron gas
87 Citations (Scopus)

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon

Arulkumaran, S., Egawa, T., Matsui, S. & Ishikawa, H., 2005 Mar 21, In : Applied Physics Letters. 86, 12, p. 1-3 3 p., 123503.

Research output: Contribution to journalArticle

high electron mobility transistors
electrical faults
buffers
augmentation
silicon
69 Citations (Scopus)

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

Egawa, T., Zhang, B. & Ishikawa, H., 2005 Mar, In : IEEE Electron Device Letters. 26, 3, p. 169-171 3 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
Silicon
Light emitting diodes
Substrates
Aluminum Oxide
4 Citations (Scopus)

Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition

Hao, M., Egawa, T. & Ishikawa, H., 2005 Dec 15, In : Journal of Crystal Growth. 285, 4, p. 466-472 7 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
32 Citations (Scopus)

Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

Miyoshi, M., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 Sep 15, In : Journal of Applied Physics. 98, 6, 063713.

Research output: Contribution to journalArticle

electron gas
sapphire
templates
electron mobility
gas density
14 Citations (Scopus)

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H. & Egawa, T., 2005 Oct, In : IEEE Transactions on Electron Devices. 52, 10, p. 2124-2128 5 p.

Research output: Contribution to journalArticle

quaternary alloys
Ohmic contacts
Field effect transistors
Heterojunctions
heterojunctions
29 Citations (Scopus)
Two dimensional electron gas
Heterojunctions
Metallorganic vapor phase epitaxy
Surface roughness
vapor phase epitaxy
29 Citations (Scopus)
35 Citations (Scopus)

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 Oct, In : Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

Research output: Contribution to journalArticle

Aluminum Oxide
High electron mobility transistors
high electron mobility transistors
Sapphire
sapphire
22 Citations (Scopus)
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Electron beams
electron beams
49 Citations (Scopus)

Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Balachander, K., Arulkumaran, S., Ishikawa, H., Baskar, K. & Egawa, T., 2005 Jan, In : Physica Status Solidi (A) Applications and Materials Science. 202, 2

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Electron beams
Metals
31 Citations (Scopus)
High electron mobility transistors
high electron mobility transistors
caps
Two dimensional electron gas
Drain current
33 Citations (Scopus)

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 Feb 14, In : Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.

Research output: Contribution to journalArticle

light emitting diodes
quantum wells
copper
thin films
metal bonding
2004
5 Citations (Scopus)

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Sun, Y., Egawa, T. & Ishikawa, H., 2004 Sep 1, In : Journal of Applied Physics. 96, 5, p. 2586-2591 6 p.

Research output: Contribution to journalArticle

quantum wells
photoluminescence
annealing
radiative recombination
optical properties
2 Citations (Scopus)

Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

Jiang, H., Egawa, T., Ishikawa, H., Dou, Y., Shao, C. & Jlmbo, T., 2004 Jul, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 7 A, p. 4101-4104 4 p.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
surface layers
Dark currents
dark current
20 Citations (Scopus)
Metallorganic vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
Sapphire
vapor phase epitaxy
20 Citations (Scopus)

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

Research output: Contribution to journalArticle

Distributed Bragg reflectors
Bragg reflectors
Light emitting diodes
light emitting diodes
Semiconductor quantum wells
20 Citations (Scopus)

Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 May 1, In : Default journal.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 Mar 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 3 A

Research output: Contribution to journalArticle

Rapid thermal annealing
Semiconductor quantum wells
quantum wells
annealing
Desorption
20 Citations (Scopus)

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 Dec 6, In : Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

Research output: Contribution to journalArticle

high electron mobility transistors
passivity
traps
caps
illumination
22 Citations (Scopus)
Bending (forming)
High electron mobility transistors
high electron mobility transistors
interlayers
Multilayers
28 Citations (Scopus)

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 Mar, In : IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

Research output: Contribution to journalArticle

electric contacts
Diodes
Metals
Electrodes
annealing
2 Citations (Scopus)

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 Sep 1, In : Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

Research output: Contribution to journalArticle

Chemical beam epitaxy
Rapid thermal annealing
epitaxy
Semiconductor quantum wells
quantum wells
11 Citations (Scopus)
sapphire
etching
chemistry
decomposition
metalorganic chemical vapor deposition

GaN-based light-emitting diodes on Si substrates

Ishikawa, H. & Egawa, T., 2004 Dec 1, In : Default journal.

Research output: Contribution to journalArticle

87 Citations (Scopus)

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 Sep 6, In : Applied Physics Letters. 85, 10, p. 1710-1712 3 p.

Research output: Contribution to journalArticle

electron mobility
vapor phase epitaxy
sapphire
templates
electron gas
87 Citations (Scopus)

High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Miyoshi, M., Ishikawa, H., Egawa, T., Asai, K., Mouri, M. & Shibata, T., 2004 Sep 1, In : Default journal. 85, p. 1710-1712

Research output: Contribution to journalArticle

20 Citations (Scopus)

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2004 Jun 10, In : Electronics Letters. 40, 12, p. 775-776 2 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Demonstrations
Substrates

High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B. & Hao, M., 2004 May 1, In : Default journal.

Research output: Contribution to journalArticle