• 5288 Citations
  • 40 h-Index
19952018

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1995

Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si

Ishikawa, H., Tsuchida, M., Shao, C. L., Soga, T., Jimbo, T. & Umeno, M., 1995 Sep 1, In : Default journal. p. P-19

Research output: Contribution to journalArticle

1996

Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

Ishikawa, H., Soga, T., Nagatomo, T., Jimbo, T. & Umeno, M., 1996 Mar 1, In : Default journal. p. We-P31

Research output: Contribution to journalArticle

Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1996 Aug 5, In : Applied Physics Letters. 69, 6, p. 830-832 3 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)
1997

Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

Ito, T., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1997 Dec 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 12 SUPPL. B, p. 7710-7711 2 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Optical characterization of GaN/sapphire films by spectroscopic ellipsometery and the optical transmission method

Wang, G., Yu, G., Ishikawa, H., Egawa, T., Watanabe, J., Jimbo, T. & Umeno, M., 1997 Mar 1, In : Default journal. p. 28p-D-1

Research output: Contribution to journalArticle

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77eV) by spectroscopic ellipsometry and the optical transmission method

Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J. & Jimbo, T., 1997 Jun 1, In : Appl. Phys. Lett.. 70, p. 3209-3211

Research output: Contribution to journalArticle

235 Citations (Scopus)

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J. & Jimbo, T., 1997 Jun 16, In : Applied Physics Letters. 70, 24, p. 3209-3211 3 p.

Research output: Contribution to journalArticle

235 Citations (Scopus)

Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire

Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T. & Umeno, M., 1997 Aug 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 36, 8 PART A, p. L1029-L1031

Research output: Contribution to journalArticle

42 Citations (Scopus)
1998

Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD

Ishikawa, H., Nakada, N., Zhao, G. Y., Egawa, T., Jimbo, T. & .Umeno, M., 1998 Sep 1, In : Default journal. p. Fr-15

Research output: Contribution to journalArticle

Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 Sep 1, In : Default journal. p. C-10-2

Research output: Contribution to journalArticle

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Yamamoto, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 Jun 15, In : Journal of Crystal Growth. 189-190, p. 575-579 5 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

High-Temperature Behaviors of GaN Schottky Barrier Diode

Nakamura, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 Sep 1, In : Default journal. p. C-9-3

Research output: Contribution to journalArticle

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 Aug 1, In : Default journal. 73, p. 809-811

Research output: Contribution to journalArticle

179 Citations (Scopus)

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 Dec 1, In : Applied Physics Letters. 73, 6, p. 809-811 3 p.

Research output: Contribution to journalArticle

179 Citations (Scopus)

Mechanical properties of the GaN thin films deposited on sapphire substrate

Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T. & Umeno, M., 1998 Jun 15, In : Journal of Crystal Growth. 189-190, p. 701-705 5 p.

Research output: Contribution to journalArticle

47 Citations (Scopus)

Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate

Hayashi, Y., Ishikawa, H., Egawa, T., Soga, T., Jimbo, T. & .Umeno, M., 1998 Sep 1, In : Default journal. p. Th-P48

Research output: Contribution to journalArticle

3 Citations (Scopus)

Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T. & Soga, T., 1998 Dec 1, In : Applied Physics Letters. 72, 18, p. 2202-2204 3 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)

Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T. & Soga, T., 1998 May 1, In : Appl. Phys. Lett.. 72, p. 2202-2204

Research output: Contribution to journalArticle

53 Citations (Scopus)

Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Ishikawa, H., Nakamura, K., Egawa, T., Jimbo, T. & Umeno, M., 1998 Jan 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 37, 1 PART A/B, p. L7-L9

Research output: Contribution to journalArticle

24 Citations (Scopus)

Sidegating effect of GaN MESFETs grown on sapphire substrate

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 Mar 19, In : Electronics Letters. 34, 6, p. 598-600 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy

Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998 Dec 1, In : Applied Physics Letters. 73, 11, p. 1472-1474 3 p.

Research output: Contribution to journalArticle

45 Citations (Scopus)

The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy

Yu, G., Ishikawa, H., M.Umeno, M. U., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998 Sep 1, In : Appl. Phys. Lett.. 73, p. 1472-1474

Research output: Contribution to journalArticle

45 Citations (Scopus)

Thermal stability of GaN on (111)Si substrate

Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 Jun 1, In : J. Crystal Growth. 189/190, p. 178-182

Research output: Contribution to journalArticle

168 Citations (Scopus)

Thermal stability of GaN on (1 1 1) Si substrate

Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 Jun 15, In : Journal of Crystal Growth. 189-190, p. 178-182 5 p.

Research output: Contribution to journalArticle

168 Citations (Scopus)

Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition

Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J. & Soga, T., 1998 Jul 1, In : Appl. Phys. Lett.. 73, p. 22-24

Research output: Contribution to journalArticle

15 Citations (Scopus)

Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition

Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J., Soga, T., Jimbo, T. & Umeno, M., 1998 Dec 1, In : Applied Physics Letters. 73, 1, p. 22-24 3 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)
1999

Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1999 Apr 1, In : Default journal. 38, p. 2630-2633

Research output: Contribution to journalArticle

13 Citations (Scopus)
13 Citations (Scopus)

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Ishikawa, H., Zhao, G. Y., Nakada, N., Egawa, T., Jimbo, T. & Umeno, M., 1999 May 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 5 PART 2, p. 492-494 3 p.

Research output: Contribution to journalArticle

188 Citations (Scopus)

High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer

Ishikawa, H., Zhao, Z. Y., Nakada, N., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1999 Jul 1, In : Default journal. p. Mo_056

Research output: Contribution to journalArticle

10 Citations (Scopus)

High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1999 Sep 1, In : Default journal. p. C-6-4

Research output: Contribution to journalArticle

Optical absorption and photoluminescence studies of n-type GaN

Zhao, G. Y., Ishikawa, H., Jiang, H., Egawa, T., Jimbo, T. & Umeno, M., 1999 Sep 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 38, 9 A/B, p. L993-L995

Research output: Contribution to journalArticle

29 Citations (Scopus)
2000

Bonding of GaN with Si using SeS2 and Laser Lift-off

Arokiaraj, J., Ishikawa, H., Soga, T., Egawa, T., Jimbo, T. & Umeno, M., 2000 Sep 1, In : Default journal. p. MA4-3

Research output: Contribution to journalArticle

Effect of RIE Damage to Blue and Green Light Emitting Diodes

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Mar 1, In : Default journal. p. TuP16

Research output: Contribution to journalArticle

Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

Arulkumaran, S., Egawa, T., Zhao, G. Y., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 Apr 1, In : Jpn. J. Appl. Phys.. 39, p. L351-L353

Research output: Contribution to journalArticle

Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD

Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Sep 1, In : Default journal. p. PME-46

Research output: Contribution to journalArticle

GaN MESFETs on (111) Si substrate grown by MOCVD

Egawa, T., Nakada, N., Ishikawa, H. & Umeno, M., 2000 Oct 12, In : Electronics Letters. 36, 21, p. 1816-1818 3 p.

Research output: Contribution to journalArticle

40 Citations (Scopus)

Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

Zhao, G. Y., Adachi, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 Oct 2, In : Applied Physics Letters. 77, 14, p. 2195-2197 3 p.

Research output: Contribution to journalArticle

25 Citations (Scopus)

High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Dec 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 3 A, p. 1035-1038 4 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)

High resposivity MSM UV photodetector based on GaN with back illumination

Jiang, H., Nakada, N., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Dec 1, In : SiC及び関連ワイドバンドギャップ半導体研究会 第9回講演会予稿集. p. 115

Research output: Contribution to journalArticle

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M. & Jimbo, T., 2000 Apr 3, In : Applied Physics Letters. 76, 14, p. 1804-1806 3 p.

Research output: Contribution to journalArticle

104 Citations (Scopus)

InGaN Light Emitting Diode with GaN/AlGaN Distributed Bragg Reflector

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Feb 1, In : Default journal. p. P-5

Research output: Contribution to journalArticle

Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors

Ishikawa, H., Nakada, N., Nakaji, M., Zhao, G. -Y., Egawa, T., Jimbo, T. & Umeno, M., 2000 Apr 1, In : Default journal. E83-C, p. 591-597

Research output: Contribution to journalArticle

3 Citations (Scopus)

Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors

Ishikawa, H., Nakada, N., Nakaji, M., Zhao, G. Y., Egawa, T., Jimbo, T. & Umeno, M., 2000 Jan 1, In : IEICE Transactions on Electronics. E83-C, 4, p. 591-596 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2000 Jan 3, In : Applied Physics Letters. 76, 1, p. 121-123 3 p.

Research output: Contribution to journalArticle

80 Citations (Scopus)

Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates

Zhang, B. J., Zhao, G. Y., Nishikawa, N., Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Dec 1, In : SiC及び関連ワイドバンドギャップ半導体研究会 第9回講演会予稿集. p. P88 (2008)-103

Research output: Contribution to journalArticle

Thermal stability of Pd/Al0.11Ga0.89N Schottky diodes

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 Sep 1, In : Default journal. p. PTD-47

Research output: Contribution to journalArticle

2001

Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T. & Umeno, M., 2001 May 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L505-L507

Research output: Contribution to journalArticle

38 Citations (Scopus)

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 Mar 1, In : IEEE Transactions on Electron Devices. 48, 3, p. 603-608 6 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

Jiang, H., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 Jan 15, In : Journal of Applied Physics. 89, 2, p. 1046-1052 7 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)