• 5288 Citations
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19952018

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Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD

Ishikawa, H., Nakada, N., Zhao, G. Y., Egawa, T., Jimbo, T. & .Umeno, M., 1998 Sep 1, In : Default journal. p. Fr-15

Research output: Contribution to journalArticle

Al composition dependent properties of quaternary AlInGaN Schottky diodes

Liu, Y., Jiang, H., Egawa, T., Zhang, B. & Ishikawa, H., 2006, In : Journal of Applied Physics. 99, 12, 123702.

Research output: Contribution to journalArticle

9 Citations (Scopus)

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H. & Egawa, T., 2005 Nov 7, In : Physica Status Solidi C: Conferences. 2, 7, p. 2623-2626 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Jiang, H., Egawa, T. & Ishikawa, H., 2006 Jun 15, In : IEEE Photonics Technology Letters. 18, 12, p. 1353-1355 3 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

Hao, M., Ishikawa, H., Egawa, T., Shao, C. L. & Jimbo, T., 2003 Jun 30, In : Applied Physics Letters. 82, 26, p. 4702-4704 3 p.

Research output: Contribution to journalArticle

40 Citations (Scopus)

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Sun, Y., Egawa, T. & Ishikawa, H., 2004 Sep 1, In : Journal of Applied Physics. 96, 5, p. 2586-2591 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T. & Umeno, M., 2001 May 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L505-L507

Research output: Contribution to journalArticle

38 Citations (Scopus)

Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

Jiang, H., Egawa, T., Ishikawa, H., Dou, Y., Shao, C. & Jlmbo, T., 2004 Jul 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 7 A, p. 4101-4104 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Bonding of GaN with Si using SeS2 and Laser Lift-off

Arokiaraj, J., Ishikawa, H., Soga, T., Egawa, T., Jimbo, T. & Umeno, M., 2000 Sep 1, In : Default journal. p. MA4-3

Research output: Contribution to journalArticle

Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1999 Apr 1, In : Default journal. 38, p. 2630-2633

Research output: Contribution to journalArticle

13 Citations (Scopus)
13 Citations (Scopus)

Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 Apr 1, In : Default journal. 41, p. L493-495

Research output: Contribution to journalArticle

14 Citations (Scopus)

Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 Sep 1, In : Default journal. p. C-10-2

Research output: Contribution to journalArticle

20 Citations (Scopus)
86 Citations (Scopus)

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 May 1, In : Default journal.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 Mar 1, In : IEEE Transactions on Electron Devices. 48, 3, p. 603-608 6 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 Oct 14, In : Applied Physics Letters. 81, 16, p. 3073-3075 3 p.

Research output: Contribution to journalArticle

51 Citations (Scopus)

Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 Mar 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 3 A, p. L334-L336

Research output: Contribution to journalArticle

3 Citations (Scopus)

Composition pulling effect in the InGaN/GaN multiple quantum well and its effect on photoluminescence

Hao, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 May 1, In : Default journal. p. Tu-P3.004

Research output: Contribution to journalArticle

7 Citations (Scopus)

Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si

Ishikawa, H., Tsuchida, M., Shao, C. L., Soga, T., Jimbo, T. & Umeno, M., 1995 Sep 1, In : Default journal. p. P-19

Research output: Contribution to journalArticle

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 Dec 6, In : Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 Sep 8, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6490-6494 5 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T. & Oda, O., 2005 Sep 1, In : Jpn. J. Appl. Phys.. Vol. 44, p. 6490-6493

Research output: Contribution to journalArticle

24 Citations (Scopus)

Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

Egawa, T., Ohmura, H., Ishikawa, H. & Jimbo, T., 2002 Jul 8, In : Applied Physics Letters. 81, 2, p. 292-294 3 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

Liu, Y., Jiang, H., Arulkumaran, S., Egawa, T., Zhang, B. & Ishikawa, H., 2005 Jul 4, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 223510.

Research output: Contribution to journalArticle

46 Citations (Scopus)

Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

Jiang, H., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 Jan 15, In : Journal of Applied Physics. 89, 2, p. 1046-1052 7 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)

Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 Sep 1, In : Default journal. p. E-2-3

Research output: Contribution to journalArticle

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Yamamoto, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 Jun 15, In : Journal of Crystal Growth. 189-190, p. 575-579 5 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Effect of RIE Damage to Blue and Green Light Emitting Diodes

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Mar 1, In : Default journal. p. TuP16

Research output: Contribution to journalArticle

22 Citations (Scopus)

Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes

Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 Mar 1, In : IEEE Transactions on Electron Devices. 48, 3, p. 573-580 8 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes

Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 Mar 1, In : Default journal. 48, p. 573-580

Research output: Contribution to journalArticle

68 Citations (Scopus)

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 Mar 1, In : IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

Research output: Contribution to journalArticle

29 Citations (Scopus)

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 Sep 1, In : Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Effects of temperature on leakage current in AlGaN/GaN HEMTs

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 May 1, In : Default journal. p. Tu-P2.068

Research output: Contribution to journalArticle

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

Arulkumaran, S., Miyoshi, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Aug 1, In : IEEE Electron Device Letters. 24, 8, p. 497-499 3 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

Arulkumaran, S., Egawa, T., Zhao, G. Y., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 Apr 1, In : Jpn. J. Appl. Phys.. 39, p. L351-L353

Research output: Contribution to journalArticle

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon

Arulkumaran, S., Egawa, T., Matsui, S. & Ishikawa, H., 2005 Mar 21, In : Applied Physics Letters. 86, 12, p. 1-3 3 p., 123503.

Research output: Contribution to journalArticle

88 Citations (Scopus)

Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

Ito, T., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1997 Dec 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 12 SUPPL. B, p. 7710-7711 2 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD

Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 Sep 1, In : Default journal. p. PME-46

Research output: Contribution to journalArticle

11 Citations (Scopus)

GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si

Ishikawa, H., Jimbo, T. & Egawa, T., 2007 Sep 1, In : Default journal. p. MM3

Research output: Contribution to journalArticle

GaN-based light-emitting diodes on Si substrates

Ishikawa, H. & Egawa, T., 2004 Dec 1, In : Default journal.

Research output: Contribution to journalArticle

GaN-based optoelectronic devices on sapphire and Si substrates

Umeno, M., Egawa, T. & Ishikawa, H., 2001 Dec 1, In : Materials Science in Semiconductor Processing. 4, 6, p. 459-466 8 p.

Research output: Contribution to journalArticle

33 Citations (Scopus)
1 Citation (Scopus)

GaN MESFETs on (111) Si substrate grown by MOCVD

Egawa, T., Nakada, N., Ishikawa, H. & Umeno, M., 2000 Oct 12, In : Electronics Letters. 36, 21, p. 1816-1818 3 p.

Research output: Contribution to journalArticle

40 Citations (Scopus)