• 5288 Citations
  • 40 h-Index
19952018

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Article
2004

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Liu, Y., Egawa, T., Ishikawa, H., Jiang, H., Zhang, B., Hao, M. & Jimbo, T., 2004 Mar 15, In : Journal of Crystal Growth. 264, 1-3, p. 159-164 6 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si

Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 Mar 1, In : Default journal. p. A10-4

Research output: Contribution to journalArticle

21 Citations (Scopus)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H., Asano, K., Zhang, B., Egawa, T. & Jimbo, T., 2004 Sep 1, In : Physica Status Solidi (A) Applied Research. 201, 12, p. 2653-2657 5 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Nanjo, T., Miura, N., Oishi, T., Suita, M., Abe, Y., Ozeki, T., Nakatsuka, S., Indue, A., Ishikawa, T., Matsuda, Y., Ishikawa, H. & Egawa, T., 2004 Apr, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1925-1929 5 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)
17 Citations (Scopus)

MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 293-299 7 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

Miyoshi, M., Sakai, M., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2004 May 1, In : Default journal.

Research output: Contribution to journalArticle

Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

Liu, Y., Egawa, T., Jiang, H., Zhang, B., Ishikawa, H. & Hao, M., 2004 Dec 13, In : Applied Physics Letters. 85, 24, p. 6030-6032 3 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Sano, Y., 2004 Jan 26, In : Applied Physics Letters. 84, 4, p. 613-615 3 p.

Research output: Contribution to journalArticle

168 Citations (Scopus)

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Miura, N., Nanjo, T., Suita, M., Oishi, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2004 May 1, In : Solid-State Electronics. 48, 5, p. 689-695 7 p.

Research output: Contribution to journalArticle

141 Citations (Scopus)

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2004 Mar 15, In : Journal of Applied Physics. 95, 6, p. 3170-3174 5 p.

Research output: Contribution to journalArticle

32 Citations (Scopus)
13 Citations (Scopus)

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Jiang, H., Egawa, T., Ishikawa, H., Shao, C. & Jimbo, T., 2004 May 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 43, 5 B, p. L683-L685

Research output: Contribution to journalArticle

19 Citations (Scopus)

Zn ion implantation along the c axis for formation of highly resistive GaN layers

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 Jan 1, In : Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.

Research output: Contribution to journalArticle

Open Access
2003

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

Hao, M., Ishikawa, H., Egawa, T., Shao, C. L. & Jimbo, T., 2003 Jun 30, In : Applied Physics Letters. 82, 26, p. 4702-4704 3 p.

Research output: Contribution to journalArticle

40 Citations (Scopus)
86 Citations (Scopus)

Composition pulling effect in the InGaN/GaN multiple quantum well and its effect on photoluminescence

Hao, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 May 1, In : Default journal. p. Tu-P3.004

Research output: Contribution to journalArticle

7 Citations (Scopus)

Effects of temperature on leakage current in AlGaN/GaN HEMTs

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 May 1, In : Default journal. p. Tu-P2.068

Research output: Contribution to journalArticle

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

Arulkumaran, S., Miyoshi, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Aug 1, In : IEEE Electron Device Letters. 24, 8, p. 497-499 3 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Dec 1, In : Journal of Crystal Growth. 259, 3, p. 245-251 7 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Dec 1, In : J. Crystal Growth. 259, p. 245-251

Research output: Contribution to journalArticle

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2003 Oct, In : IEICE Transactions on Electronics. E86-C, 10, p. 2077-2081 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer

Ishikawa, H., Kato, M., Hao, M. S., Egawa, T. & Jimbo, T., 2003 May 1, In : Default journal. p. Tu-P3.005

Research output: Contribution to journalArticle

8 Citations (Scopus)

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Aug 1, In : Journal of Applied Physics. 94, 3, p. 1662-1666 5 p.

Research output: Contribution to journalArticle

41 Citations (Scopus)

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M. & Oda, O., 2003 Oct, In : IEICE Transactions on Electronics. E86-C, 10, p. 2071-2076 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

High-quality quaternary AlInGaN epilayers on sapphire

Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Nov 1, In : Physica Status Solidi (A) Applied Research. 200, 1, p. 36-39 4 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Nov, In : Physica Status Solidi (A) Applied Research. 200, 1, p. 187-190 4 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)

High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 May 1, In : Default journal. p. Tu-A3.4

Research output: Contribution to journalArticle

Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

Jiang, H., Egawa, T., Ishikawa, H., Dou, Y. B., Shao, C. L. & Jimbo, T., 2003 Nov 22, In : Electronics Letters. 39, 22, p. 1604-1606 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Hirose, Y., Ikeda, Y., Ishii, M., Murata, T., Inoue, K., Tanaka, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Oct, In : IEICE Transactions on Electronics. E86-C, 10, p. 2058-2064 7 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 May 5, In : Applied Physics Letters. 82, 18, p. 3110-3112 3 p.

Research output: Contribution to journalArticle

66 Citations (Scopus)

Valence-Band Discontinuity at the AIN/Si Interface

Ishikawa, H., Zhang, B., Egawa, T. & Jimbo, T., 2003 Oct, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 10, p. 6413-6414 2 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Valence Band Discontinuity at the AlN/Si Interface

Ishikawa, H., Zhang, B., Egawa, T. & T.Jimbo, T. J., 2003 Oct 1, In : Jpn. J. Appl. Phys.. 42, p. 6413-6414

Research output: Contribution to journalArticle

21 Citations (Scopus)
2002

Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 Apr 1, In : Default journal. 41, p. L493-495

Research output: Contribution to journalArticle

14 Citations (Scopus)

Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 Oct 14, In : Applied Physics Letters. 81, 16, p. 3073-3075 3 p.

Research output: Contribution to journalArticle

51 Citations (Scopus)

Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

Egawa, T., Ohmura, H., Ishikawa, H. & Jimbo, T., 2002 Jul 8, In : Applied Physics Letters. 81, 2, p. 292-294 3 p.

Research output: Contribution to journalArticle

36 Citations (Scopus)

Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 Sep 1, In : Default journal. p. E-2-3

Research output: Contribution to journalArticle

GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Jiang, H., Okui, A., Ishikawa, H., Shao, C. L., Egawa, T. & Jimbo, T., 2002 Jan 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 1 A/B, p. L34-L36

Research output: Contribution to journalArticle

5 Citations (Scopus)

Growth and Characterization of Quaternary AlInGaN Epilayers on Sapphire

Liu, Y., Mori, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2002 Mar 1, In : Default journal. p. 27a-ZM-29

Research output: Contribution to journalArticle

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 Sep 1, In : Journal of Crystal Growth. 244, 1, p. 6-11 6 p.

Research output: Contribution to journalArticle

51 Citations (Scopus)

High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE

Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., Asai, K., Sumiya, S. & Kuraoka?2?, Y., 2002 Jan 1, In : Inst. Phys. Conf. Ser.. p. 783-788

Research output: Contribution to journalArticle

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 Mar 25, In : Applied Physics Letters. 80, 12, p. 2186-2188 3 p.

Research output: Contribution to journalArticle

84 Citations (Scopus)

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., Kuraoka, Y., Tanaka, M. & Oda, O., 2002 Aug 5, In : Applied Physics Letters. 81, 6, p. 1131-1133 3 p.

Research output: Contribution to journalArticle

61 Citations (Scopus)

Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S. & Kuraoka?2?, Y., 2002 Aug 1, In : Appl. Phys. Lett.. 81, p. 1131-1133

Research output: Contribution to journalArticle

61 Citations (Scopus)

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. & Umeno, M., 2002 Jan 1, In : Journal of Applied Physics. 91, 1, p. 528-530 3 p.

Research output: Contribution to journalArticle

63 Citations (Scopus)

MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Nakada, N., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2002 Apr, In : Journal of Crystal Growth. 237-239, 1 4 II, p. 961-967 7 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)
2001

Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T. & Umeno, M., 2001 May 15, In : Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L505-L507

Research output: Contribution to journalArticle

38 Citations (Scopus)

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 Mar 1, In : IEEE Transactions on Electron Devices. 48, 3, p. 603-608 6 p.

Research output: Contribution to journalArticle

68 Citations (Scopus)

Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

Jiang, H., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 Jan 15, In : Journal of Applied Physics. 89, 2, p. 1046-1052 7 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)