• 5237 Citations
  • 40 h-Index
19952018

Research output per year

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Research Output

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Conference article
2010

Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

Ishikawa, H., Shimanaka, K., Amir, M. A. B. M., Hara, Y. & Nakanishi, M., 2010 Aug 26, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 7-8, p. 2049-2051 3 p.

Research output: Contribution to journalConference article

8 Citations (Scopus)
2008

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Ishikawa, H., Jimbo, T. & Egawa, T., 2008 Dec 1, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 5, 6, p. 2086-2088 3 p.

Research output: Contribution to journalConference article

20 Citations (Scopus)
2005

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H. & Egawa, T., 2005 Dec 1, In : ECS Transactions. 1, 2, p. 259-265 7 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)
2004

Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M. & Oda, O., 2004 Dec 1, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 1031-1034 4 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)
2003

Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE

Miyoshi, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 Dec 1, In : Physica Status Solidi C: Conferences. 7, p. 2091-2094 4 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)

Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer

Ishikawa, H., Kato, M., Hao, M. S., Egawa, T. & Jimbo, T., 2003 Dec 1, In : Physica Status Solidi C: Conferences. 7, p. 2177-2180 4 p.

Research output: Contribution to journalConference article

8 Citations (Scopus)

InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition

Zhang, B., Egawa, T., Liu, Y., Ishikawa, H. & Jimbo, T., 2003 Dec 1, In : Physica Status Solidi C: Conferences. 7, p. 2244-2247 4 p.

Research output: Contribution to journalConference article

6 Citations (Scopus)

Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method

Sakai, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 Dec 1, In : Physica Status Solidi C: Conferences. 7, p. 2412-2415 4 p.

Research output: Contribution to journalConference article

2001

Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H. & Jimbo, T., 2001 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 205-208 4 p.

Research output: Contribution to journalConference article

2000

Electron mobility on AlGaN/GaN heterostructure interface

Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 May, In : Physica E: Low-Dimensional Systems and Nanostructures. 7, 3, p. 963-966 4 p.

Research output: Contribution to journalConference article

14 Citations (Scopus)
1999

Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1999 May, In : Bulletin of Materials Science. 22, 3, p. 363-367 5 p.

Research output: Contribution to journalConference article

Open Access
4 Citations (Scopus)

High-quality GaN on Si substrate using AlGaN/AlN intermediate layer

Ishikawa, H., Zhao, G. Y., Nakada, N., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1999 Nov 1, In : Physica Status Solidi (A) Applied Research. 176, 1, p. 599-603 5 p.

Research output: Contribution to journalConference article

68 Citations (Scopus)

Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1999 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 401-404 4 p.

Research output: Contribution to journalConference article

4 Citations (Scopus)
1997

Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T. & Umeno, M., 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 1101-1106 6 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)

Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD

Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1997 Jan 1, In : Materials Research Society Symposium - Proceedings. 449, p. 1191-1196 6 p.

Research output: Contribution to journalConference article

3 Citations (Scopus)