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Fingerprint Dive into the research topics where Kazushige Horio is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 2 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Buffer layers Engineering & Materials Science
Surface states Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
Field effect transistors Engineering & Materials Science
Passivation Engineering & Materials Science
buffers Physics & Astronomy
Electric breakdown Engineering & Materials Science

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Research Output 1980 2019

  • 1545 Citations
  • 26 h-Index
  • 156 Article
  • 60 Conference contribution
  • 4 Chapter

Analysis of Breakdown Voltages in AlGaN/GaN HEMTs with Low-Double Passivation Layers

Nakamura, K., Hanawa, H. & Horio, K., 2019 Jun 1, In : IEEE Transactions on Device and Materials Reliability. 19, 2, p. 298-303 6 p., 8660523.

Research output: Contribution to journalArticle

Aluminum gallium nitride
Gallium nitride
Drain current
High electron mobility transistors
Electric breakdown

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Nakamura, K., Hanawa, H. & Horio, K., 2018 Nov 27, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., p. 247-250 4 p. 8551096

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
breakdown

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

Kabemura, T., Hanawa, H. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4. p. 28-31 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Passivation
Electric fields
Electric breakdown
Permittivity

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

Ueda, S., Kawada, Y. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4. p. 24-27 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Impact ionization
High electron mobility transistors
Buffer layers
Electric breakdown
Passivation
3 Citations (Scopus)

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-k Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura, T., Ueda, S., Kawada, Y. & Horio, K., 2018 Sep 1, In : IEEE Transactions on Electron Devices. 65, 9, p. 3848-3854 7 p., 8423447.

Research output: Contribution to journalArticle

High electron mobility transistors
Buffer layers
Electric breakdown
Passivation
Electric fields