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Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 2 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Buffer layers Engineering & Materials Science
Surface states Engineering & Materials Science
Field effect transistors Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
buffers Physics & Astronomy
field effect transistors Physics & Astronomy
Impact ionization Engineering & Materials Science

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Research Output 1980 2017

  • 1412 Citations
  • 24 h-Index
  • 154 Article
  • 55 Conference contribution
  • 4 Chapter
Aluminum gallium nitride
Traveling wave tubes
Gallium nitride
Logic gates
Optical waveguides
High electron mobility transistors
Buffer layers
high electron mobility transistors
Passivation
passivity

Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer

Kawada, Y., Hanawa, H. & Horio, K. 2017 Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4, p. 31-34 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Electric breakdown
Passivation
Buffers
Electron energy levels

Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Saito, Y., Tsurumaki, R., Noda, N. & Horio, K. 2017 Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4, p. 27-30 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Buffer layers
Transient analysis
Buffers
aluminum gallium nitride
1 Citations

Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

Tsurumaki, R., Noda, N. & Horio, K. 2017 Jun 1 In : Microelectronics Reliability. 73, p. 36-41 6 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Buffer layers
high electron mobility transistors
time lag
buffers