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  • 1 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Buffer layers Engineering & Materials Science
Surface states Engineering & Materials Science
gallium arsenide Chemical Compounds
buffers Physics & Astronomy
Substrates Engineering & Materials Science
Electric potential Engineering & Materials Science
field effect transistors Physics & Astronomy

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Research Output 1980 2017

  • 1311 Citations
  • 22 h-Index
  • 154 Article
  • 55 Conference contribution
  • 4 Chapter
Aluminum gallium nitride
Gallium nitride
Logic gates
Optical waveguides
Electric current measurement
High electron mobility transistors
Buffer layers
Passivation
high electron mobility transistors
passivity

Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer

Kawada, Y., Hanawa, H. & Horio, K. 2017 Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4, p. 31-34 4 p.

Research output: ResearchConference contribution

High electron mobility transistors
Electric breakdown
Passivation
Buffers
aluminum gallium nitride

Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Saito, Y., Tsurumaki, R., Noda, N. & Horio, K. 2017 Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4, p. 27-30 4 p.

Research output: ResearchConference contribution

High electron mobility transistors
Buffer layers
Transient analysis
Buffers
aluminum gallium nitride
1 Citations

Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

Tsurumaki, R., Noda, N. & Horio, K. 2017 Jun 1 In : Microelectronics Reliability. 73, p. 36-41 6 p.

Research output: Research - peer-reviewArticle

High electron mobility transistors
Buffer layers
aluminum gallium nitride
high electron mobility transistors
time lag