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  • 2 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Buffer layers Engineering & Materials Science
Surface states Engineering & Materials Science
Field effect transistors Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
buffers Physics & Astronomy
Passivation Engineering & Materials Science
Electric breakdown Engineering & Materials Science

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Research Output 1980 2018

  • 1445 Citations
  • 24 h-Index
  • 155 Article
  • 58 Conference contribution
  • 4 Chapter

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

Kabemura, T., Hanawa, H. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4, p. 28-31 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Passivation
Electric fields
Electric breakdown
Permittivity

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

Ueda, S., Kawada, Y. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4, p. 24-27 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Impact ionization
High electron mobility transistors
Buffer layers
Electric breakdown
Passivation

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-k Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura, T., Ueda, S., Kawada, Y. & Horio, K., 2018 Sep 1, In : IEEE Transactions on Electron Devices. 65, 9, p. 3848-3854 7 p., 8423447

Research output: Contribution to journalArticle

High electron mobility transistors
Buffer layers
Electric breakdown
Passivation
Electric fields

Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers

Nakano, K., Hanawa, H. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4, p. 20-23 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Electric breakdown
High electron mobility transistors
Permittivity
Electric fields
1 Citations
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