• Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
1985 …2022

Research activity per year

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Network

Yumi Kakuhara

  • NEC Electronics Corporation
  • NEC Corporation
  • Advanced Device Development Division
  • Renesas Technology Corp.
  • Process Technology Division
  • Advanced Device Development Division

External person

Noriaki Oda

  • Semiconductor Leading Edge Technologies, Inc.
  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • Advanced Device Development Division
  • Process Technology Division
  • ULSI Device Development Laboratories
  • Advanced Device Development Division

External person

Ploybussara Gomasang

  • Silpakorn University

External person

Shinji Yokogawa

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • Manufacturing Management Division
  • Advanced Device Development Division
  • Info-Powered Energy System Research Center
  • The University of Electro-Communications
  • Advanced Device Development Division
  • University of Electro-Communications

External person

Y. Hayashi

  • Microelectronics Res. Labs
  • NEC Corporation
  • ULSI Device Development Lab

External person

Yasuaki Tsuchiya

  • NEC Corporation
  • Microelectronics Res. Labs
  • Bell Lab
  • NEC Corp.
  • Alcatel-Lucent
  • ULSI Device Development Laboratories
  • ULSI Device Development Lab
  • Lucent

External person

M. Tagami

  • NEC Corporation
  • NEC Electronics Corporation
  • Renesas Technology Corp.

External person

Naoyoshi Kawahara

  • NEC Electronics Corporation
  • NEC Corporation
  • Advanced Device Development Division
  • Renesas Technology Corp.
  • Advanced Device Development Division

External person

M. Sekine

  • Renesas Technology Corp.
  • Process Technology Division

External person

H. Imura

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

Tetsuya Kurokawa

  • Waseda University
  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

Tetsuya Osaka

  • Waseda University
  • Kagami Memorial Laboratory for Materials Science and Technology

External person

Akihiro Kajita

  • Low-power Electronics Association and Project (LEAP)
  • Low-power Electronics Association and Project (LEAP)
  • Toshiba Corporation
  • Corporate Research and Development Center

External person

Tadashi Sakai

  • Low-power Electronics Association and Project (LEAP)
  • Low-power Electronics Association and Project (LEAP)
  • Toshiba Corporation

External person

Tatsuya Usami

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • ULSI Device Development Laboratories
  • Process Technology Division

External person

Takamaro Kikkawa

  • NEC Corporation
  • ULSI Device Development Laboratories
  • ULSI Device Development Lab
  • Microelectronics Research Laboratories

External person

Koichi Ohto

  • NEC Corporation
  • NEC Electronics Corporation
  • Renesas Technology Corp.
  • Microelectronics Research Laboratories

External person

M. Sekine

  • NEC Electronics Corporation
  • NEC Corporation

External person

Vincent M. Donnelly

  • Lucent Technologies
  • Alcatel-Lucent
  • Lucent
  • ULSI Device Development Lab
  • Bell Lab

External person

K. Kikuta

  • Microelectronics Res. Labs
  • NEC Corporation
  • Microelectronics Research Laboratories

External person

Naoshi Sakuma

  • Low-power Electronics Association and Project (LEAP)
  • Low-power Electronics Association and Project (LEAP)

External person

Kenta Yamada

  • Renesas Technology Corp.

External person

M. Yoshino

  • Nihon University

External person

Hiroyuki Kunishima

  • Renesas Technology Corp.

External person

Nao Takano

  • Waseda University
  • Kagami Memorial Laboratory for Materials Science and Technology

External person

Toshiyuki Takewaki

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • Advanced Device Development Division
  • Advanced Device Development Division

External person

Mieko Suzuki

  • NEC Electronics Corporation
  • NEC Corporation
  • Japan
  • Renesas Technology Corp.
  • ULSI Device Development Laboratories
  • Advanced Device Development Division

External person

Takashi Yata

  • KISCO Ltd.

External person

T. Maruyama

  • Renesas Technology Corp.
  • Process Technology Division

External person

Sadayuki Ohnishi

  • Renesas Technology Corp.

External person

T. Maruyama

  • NEC Electronics Corporation
  • NEC Corporation

External person

J. Jacobs

  • NEC Corporation

External person

Hideki Gomi

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

Akira Kubo

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • ULSI Device Development Laboratories

External person

B. Withers

  • NEC Corporation

External person

Susumu Okada

  • University of Tsukuba
  • Graduate School of Pure and Applied Sciences

External person

Hideki Hashimoto

  • Toray Industries, Inc.

External person

Kenji Kawahara

  • Kyushu University
  • Global Innovation Center

External person

Swati Achra

  • KU Leuven
  • Interuniversitair Micro-Elektronica Centrum

External person

T. Nakajima

  • Microelectronics Res. Labs
  • NEC Corporation

External person

Shuji Sone

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

Kinji Tsunenari

  • NEC Corporation
  • Microelectronics Research Laboratories

External person

A. Higashisaka

  • NEC Corporation

External person

Akiko Kameyama

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • Advanced Device Development Division

External person

Zsolt Tokei

  • Interuniversitair Micro-Elektronica Centrum

External person

H. Aoki

  • ULSI Device Development Laboratories
  • NEC Corporation

External person

K. Arita

  • Renesas Technology Corp.
  • ULSI Device Development Laboratories
  • NEC Corporation

External person

Hisao Miyazaki

  • Low-power Electronics Association and Project (LEAP)
  • Toshiba Corporation
  • Corporate Research and Development Center

External person

Inge Asselberghs

  • Interuniversitair Micro-Elektronica Centrum

External person

K. Yamada

  • Sophia University
  • Kyoto University
  • Tohoku University
  • Institute for Chemical Research
  • Institute for Chemical Research
  • Tohoku University
  • Department of Physics
  • High Energy Accelerator Research Organization, Institute of Materials Structure Science

External person

Yuichi Yamazaki

  • Low-power Electronics Association and Project (LEAP)

External person

Seishi Akahori

  • Toray Industries, Inc.

External person

T. Taiji

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

Hiroki Ago

  • Kyushu University
  • Global Innovation Center

External person

Tom Ritzdorf

  • Semitool Inc.
  • Bell Lab
  • Semitool Incorporated
  • Alcatel-Lucent
  • Advanced Technology Group
  • Lucent

External person

T. Furutsuka

  • NEC Corporation

External person

Xiangyu Wu

  • KU Leuven
  • Interuniversitair Micro-Elektronica Centrum

External person

T. Onodera

  • NEC Corporation
  • Microelectronics Res. Labs

External person

M. Nagase

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

M. Kanamori

  • NEC Corporation

External person

Tomomi Kaneko

  • Waseda University

External person

Masaya Kawano

  • Renesas Technology Corp.

External person

N. Ito

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

Y. Yu

  • Novellus Systems, Inc.

External person

H. Miyamoto

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

J. Kawahara

  • Microelectronics Res. Labs

External person

J. F. Miner

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

T. Goto

  • Sophia University
  • Faculty of Science and Technology
  • Physics Division

External person

Yasutaka Uchida

  • Teikyo University of Science
  • Tokyo University of Science
  • Faculty of Life and Environmental Science
  • Teikyo University of Science

External person

S. Watanabe

  • Institute of Space and Astronautical Science
  • Japan Aerospace Exploration Agency (ISAS/JAXA)
  • The University of Tokyo
  • Japan Aerospace Exploration Agency
  • Institute for Space and Astronautical Science
  • Saitama University
  • Inst. for Space Astronautical Sci.
  • Japan Aerospace Exploration Agency (JAXA)
  • Inst. Space and Astronautical Sci.
  • Japan Aerospace Exploration Agency
  • Institute of Space and Astronautical Science (ISAS), JAXA
  • Department of High Energy Astrophysics
  • JAXA Institute of Space and Astronautical Science

External person

Masayuki Katagiri

  • Toshiba Corporation
  • Corporate Research and Development Center

External person

Itsuaki Matsuda

  • Waseda University

External person

Yusuke Saito

  • National Institute for Materials Science Tsukuba
  • Faculty of Systems Engineering

External person

Stefanie Sergeant

  • Interuniversitair Micro-Elektronica Centrum

External person

Kazutoshi Shiba

  • Renesas Technology Corp.

External person

Manabu Iguchi

  • Renesas Technology Corp.

External person

T. Tonegawa

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

Sandeep Dalal

  • Defence Research and Development Organisation India

External person

Thomas Nuytten

  • Interuniversitair Micro-Elektronica Centrum

External person

Koji Kishimoto

  • ULSI Device Development Laboratories
  • NEC Corporation

External person

T. Tanaka

  • Faculty of Systems Engineering

External person

Y. Yamazaki

  • Jikei Univ. School of Med.
  • The Jikei University School of Medicine
  • Inst. High Dimensional Med. Imaging
  • Dept. of Surgery

External person

H. Yano

  • Institute of National Rehabilitation Center for the Disabled
  • National Rehabilitation Center for Persons with Disabilities
  • Res. Lnstitute, Natl. Rehab. Ctr. D.
  • Natl. Rehab. Center for the Disabled
  • Res. Inst. Natl. Rehab. Ctr. D.
  • Res. Inst. Natl. Rehab. Ctr. P.
  • Res. Inst., Natl. Rehab. Ctr. D.
  • National Rehabilitation Centre for the Disabled
  • Natl Rehabilitation Cent for the
  • Department of Motor Dysfunction
  • Division of Motor Dysfunction
  • Department of Rehabilitation for Movement Functions
  • Motor Dysfunction Division
  • Motor Dysfunction Division

External person

T. Sakai

  • Japan Atomic Energy Research Inst.
  • Japan Atomic Energy Agency

External person

Hironori Toyoshima

  • Renesas Technology Corp.

External person

Jean François de Marneffe

  • Interuniversitair Micro-Elektronica Centrum

External person

Kenta Yasuraoka

  • Graduate School of Pure and Applied Sciences
  • University of Tsukuba

External person

Rika Matsumoto

  • Tokyo Polytechnic University

External person

Takashi Yoshida

  • Toshiba Corporation
  • Corporate Research and Development Center

External person

S. Saito

  • ULSI Device Development Laboratories
  • NEC Corporation

External person

E. Apen

  • Novellus Systems, Inc.
  • Novellus Systems Inc.

External person

K. Sugai

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

H. Kawasaki

  • Mitsubishi Heavy Industries, Ltd.

External person

Akhilesh Pandey

  • Defence Research and Development Organisation India

External person

M. Takagi

  • Kobe University

External person

A. Kolics

  • Blue29, Inc.

External person

Kazuyoshi Ueno

  • SIT Research Center for Green Innovation

External person

Yumi Ogawa

  • NEC Corporation
  • Microelectronics Research Laboratories

External person

Young Bae Park

  • Andong National University

External person

Masahiro Yoshino

  • Waseda University

External person

Tsutomu Nakada

  • Ebara Corporation

External person

T. Ishigami

  • Renesas Technology Corp.

External person

K. Chattopadhyay

  • Novellus Systems, Inc.

External person

M. Murakami

  • NEC Corporation

External person

Takayoshi Yoshida

  • NEC Corporation
  • Microelectronics Research Laboratories

External person

Susumu Watanabe

  • Renesas Technology Corp.

External person

A. Sekiguchi

  • R and D Lab.
  • ANELVA Corp.
  • ULSI Device Development Lab

External person

N. Shimosaka

  • NEC Corporation

External person

Dennis Lin

  • Interuniversitair Micro-Elektronica Centrum

External person

J. Jacobs

  • NEC Electronics America, Inc.
  • NEC Corporation

External person

E. Coleman

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

M. E. Gross

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

Xiang Li

  • Shanghai Jiao Tong University

External person

H. Makita

  • NEC Corporation

External person

K. Kajiyana

  • ULSI Device Development Laboratories
  • Microelectronics Research Laboratories
  • NEC Corporation

External person

T. Tan-no

  • NEC Corporation

External person

Takayuki Goto

  • Renesas Technology Corp.
  • NEC Corporation

External person

M. Sakurai

  • NEC Corporation

External person

Junkai Jiang

  • Department of Electrical and Computer Engineering
  • University of California at Santa Barbara

External person

Akira Matsumoto

  • Renesas Technology Corp.

External person

Nguyen Thanh Cuong

  • National Institute for Materials Science Tsukuba
  • International Center for Young Scientists

External person

T. Shiozawa

  • NEC Corporation

External person

Xuejun Xie

  • Department of Electrical and Computer Engineering
  • University of California at Santa Barbara

External person

M. Biberger

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

Yosi Shacham-Diamand

  • University Research Institute for Nano Science and Nano-Technologies
  • Department of Physical Electronics
  • Tel Aviv University

External person

Kazuyuki Hirose

  • NEC Corporation

External person

Takashi Yokoyama

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

H. Toyoshima

  • NEC Corporation

External person

Tadatoshi Nozaki

  • NEC Corporation

External person

K. Arita

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • ULSI Device Development Laboratories

External person

Yoko Wasai

  • HORIBA Ltd.
  • Horiba, Ltd.

External person

Nobuo Hironaga

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

Yoshiaki Yamamoto

  • NEC Electronics America, Inc.
  • NEC Corporation
  • Advanced Technology Development Division
  • Renesas Technology Corp.

External person

Hiroaki Nanba

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

K. Motoyama

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

Wei Liu

  • Department of Electrical and Computer Engineering
  • University of California at Santa Barbara

External person

Junfa Mao

  • Shanghai Jiao Tong University

External person

S. Yamasaki

  • NEC Corporation

External person

T. Ide

  • Novellus Systems, Inc.

External person

Jiahao Kang

  • Department of Electrical and Computer Engineering
  • University of California at Santa Barbara

External person

Susumu Asada

  • Renesas Technology Corp.

External person

Ichiro Honma

  • Renesas Technology Corp.

External person

W. L. Brown

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

Tadahiko Horiuchi

  • NSCore, Inc.
  • NEC Corporation
  • Renesas Technology Corp.
  • System LSI Developement Division
  • ULSI Device Development Laboratories
  • VLSI Development Division

External person

Yoshiaki Yamada

  • NEC Corporation
  • NEC VLSI Development Div

External person

Jae Hwan Chu

  • Department of Electrical and Computer Engineering
  • University of California at Santa Barbara

External person

Daisuke Oshida

  • NEC Electronics Corporation
  • NEC Corporation
  • Advanced Device Development Division
  • Renesas Technology Corp.

External person

Y. Ajima

  • Renesas Technology Corp.
  • Process Technology Division

External person

Cedric Huyghebaert

  • Interuniversitair Micro-Elektronica Centrum

External person

H. Hida

  • NEC Co.
  • NEC Corporation
  • Renesas Electronics Corporation
  • IEEE
  • Microelectronics Research Lab
  • Microelectronics Research Lab
  • Photonic Wireless Devices Res. Lab.
  • System Devices Research Laboratories
  • Microelectronics Research Laboratories
  • Compound Semiconductor Devices Business Division
  • Advanced ASIC Development Department
  • Ultra High Speed Device Res. Lab.
  • Microlectron. Research Laboratories
  • System ASIC Division
  • Osaka University
  • Microlectron. Research Laboratories
  • Optoelectronics and High Frequency Device Research Laboratories
  • PWD Research Laboratories
  • Renesas Technology Corp.
  • Osaka University

External person

Hideaki Kawamoto

  • ULSI Device Development Laboratories
  • NEC Corporation

External person

Tomoko Funayama

  • Teikyo University of Science
  • Teikyo University
  • Faculty of Medical Science
  • Teikyo University of Science

External person

T. Kurokawa

  • Kyushu Institute of Technology

External person

Steven Brems

  • Interuniversitair Micro-Elektronica Centrum

External person

Kaustav Banerjee

  • Department of Electrical and Computer Engineering
  • University of California at Santa Barbara

External person

Makoto Kubota

  • Ebara Corporation

External person

M. Suzuki

  • RIKEN
  • RIKEN
  • Cosmic Radiation Laboratory

External person

N. Itoh

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

A. Kobayashi

  • R and D Lab.
  • ANELVA Corp.
  • ULSI Device Development Lab

External person

Nataliya Nabatova-Gabain

  • HORIBA Ltd.
  • Horiba Jobin Yvon Co. Ltd.
  • Horiba, Ltd.

External person

M. Hiroi

  • Tohoku University
  • Kagoshima University
  • Tohoku University
  • Department of Physics and Astronomy

External person

B. Withers

  • NEC Electronics America, Inc.
  • NEC Corporation

External person

S. Takahashi

  • Microelectronics Res. Labs

External person

S. Chikaki

  • Microelectronics Res. Labs

External person

Hitoshi Aramaki

  • Waseda University

External person

T. Ide

  • Novellus Systems, Inc.

External person

T. Wake

  • NEC Corporation
  • ULSI Device Development Laboratories

External person

Ajay Kumar

  • Indian Institute of Technology Delhi

External person

A. Kubo

  • Keio University

External person

Masahiro Ikeda

  • Renesas Technology Corp.

External person

A. Matsumoto

  • ULSI Device Development Laboratories
  • NEC Corporation

External person

Y. Yu

  • Novellus Systems, Inc.

External person

Ken Tokashiki

  • NEC Corporation

External person

Marc Heyns

  • KU Leuven
  • Interuniversitair Micro-Elektronica Centrum

External person

Mina Maruyama

  • Graduate School of Pure and Applied Sciences
  • University of Tsukuba

External person

M. Ikeda

  • Osaka University
  • Kobe University
  • Graduate School of Engineering
  • Department of Computer-Controlled Mechanical Systems
  • Division of Materials and Manufacturing Science, Graduate School of Engineering
  • Osaka University
  • Osaka University
  • Osaka University

External person

I. Ivanov

  • Blue29, Inc.

External person

S. Ando

  • NEC Corporation

External person

Scott Grace

  • Semitool Inc.
  • Semitool Incorporated
  • Advanced Technology Group

External person

Y. Kakuhura

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.

External person

Akiko Matsuyama

  • Kisco, Ltd.
  • KISCO Ltd.

External person

Hoo Jeong Lee

  • Sungkyunkwan University

External person

K. Chattopadhyay

  • Novellus Systems, Inc.

External person

C. Kamise

  • NEC Corporation

External person

M. Yamashita

  • Institute of Space and Astronautical Science
  • Japan Aerospace Exploration Agency
  • JAXA Institute of Space and Astronautical Science

External person

Y. Tsukada

  • NEC Corporation
  • System LSI Developement Division

External person

Rishabh Shukla

  • Indian Institute of Technology Delhi

External person

N. Aoto

  • NEC Corporation

External person

Akiko Hashimoto

  • KISCO Limited
  • KISCO Ltd.

External person

Osamu Nakatsuka

  • Nagoya University

External person

Takehiro Saitoh

  • NEC Electronics Corporation
  • NEC Corporation
  • Advanced Technology Development Division
  • Renesas Technology Corp.
  • Advanced Technology Devmt. Division

External person

T. Siegrist

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

Y. Yamamoto

  • The University of Tokyo

External person

E. Klawuhn

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

Y. Ajima

  • NEC Electronics Corporation
  • NEC Corporation

External person

Y. Aoki

  • Nagoya University

External person

R. S. Dhaka

  • Indian Institute of Technology Delhi

External person

al et al

  • Bell Lab
  • Alcatel-Lucent
  • Lucent

External person

Yoshiaki Kogure

  • Teikyo University of Science

External person

T. Yamaguchi

  • Tokyo Metropolitan Industrial Technology Research Institute

External person

B. Van Schravendijk

  • Novellus Systems, Inc.
  • Novellus Systems Inc.

External person

Masayuki Hiroi

  • NEC Electronics Corporation
  • NEC Corporation
  • Advanced Device Development Division
  • Renesas Technology Corp.
  • Advanced Device Development Division

External person

Tomohiko Yamamoto

  • Toray Industries, Inc.

External person

Takashi Ishigarni

  • NEC Electronics Corporation
  • NEC Corporation
  • Renesas Technology Corp.
  • Advanced Device Development Division

External person

Shinya Ito

  • Renesas Technology Corp.

External person