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Research Output 1985 2019

  • 865 Citations
  • 17 h-Index
  • 94 Article
  • 29 Conference contribution
  • 1 Chapter
  • 1 Editorial
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Conference contribution
2019

High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Akimoto, T. & Ueno, K., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 351-353 3 p. 8731128. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Graphene
Chemical vapor deposition
crystallinity
graphene

Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Yokosawa, K., Akimoto, T., Okada, Y. & Ueno, K., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 47-49 3 p. 8731211. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
low resistance
Metallizing
Graphene
Etching

Synthesis of nitrogen-doped multilayer graphene film by solid-phase deposition using Co-N catalyst

Fujishima, Y. & Ueno, K., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 354-356 3 p. 8731097. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Graphene
solid phases
graphene
Multilayers
2018
1 Citation (Scopus)

Oxidation Structure Change of Copper Surface Depending on Accelerated Humidity

Gomasang, P., Ogiue, S., Ueno, K. & Yokogawa, S., 2018 Aug 8, 2018 IEEE International Interconnect Technology Conference, IITC 2018. Institute of Electrical and Electronics Engineers Inc., p. 112-114 3 p. 8430461

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Copper
Atmospheric humidity
Oxidation
Sheet resistance
Film thickness
2017

Asimple test method forelectromigration reliability ofsolder/Cu pillar bumpsusing flat cables

Azuma, N., Owada, M., Abe, T., Nakada, T., Kubota, M. & Ueno, K., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-June. p. 270-272 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flat cables
Electromigration
Plating
Soldering alloys
Copper

Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer

Ichikawa, H. & Ueno, K., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 244-246 3 p. 7947583

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphene
Multilayers

Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects

Kawamoto, K., Saito, Y., Kenmoku, M. & Ueno, K., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 252-254 3 p. 7947586

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Graphene
Multilayers
Molybdenum oxide
Molybdenum
2016

Synthesis of doped carbon nanotubes by CVD using NiB catalysts

Tomita, K., Kawakami, N., Aozasa, A., Aida, K. & Ueno, K., 2016 Jul 8, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., p. 198-199 2 p. 7507730

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carbon Nanotubes
Boron
Nickel
Chemical vapor deposition
Carbon nanotubes
2011

Review of ADMETA Plus 2011 conference topics

Ueno, K. & Kawasaki, H., 2011, Advanced Metallization Conference (AMC). p. 133-142 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Chemical vapor deposition of nanocarbon on electroless Ni-B alloy catalyst

Tanaka, T., Sato, T., Karasawa, Y. & Ueno, K., 2010, Advanced Metallization Conference (AMC). p. 258-259 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Chemical vapor deposition
Catalysts
Deposits
Temperature
4 Citations (Scopus)

Material and process challenges for interconnects in nanoelectronics era

Ueno, K., 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 64-65 2 p. 5488945

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanoelectronics
Electromigration
Fabrication
Optical interconnects
Grain growth
2009
2 Citations (Scopus)

Grain growth of electroplated copper film by alternative annealing methods

Ueno, K., Shimotani, K., Shimada, Y., Yomogida, S., Takeshita, T., Hashimoto, A. & Yata, T., 2009, Advanced Metallization Conference (AMC). p. 283-287 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Supercritical fluids
Grain growth
Copper
Annealing
Joule heating
2006
5 Citations (Scopus)

A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure

Kawahara, N., Tagami, M., Withers, B., Kakuhura, Y., Imura, H., Ohto, K., Taiji, T., Arita, K., Kurokawa, T., Nagase, M., Maruyama, T., Oda, N., Hayashi, Y., Jacobs, J., Sakurai, M., Sekine, M. & Ueno, K., 2006, 2006 International Interconnect Technology Conference, IITC. p. 152-154 3 p. 1648674

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Leakage currents
Electric breakdown
Plasmas
20 Citations (Scopus)

Highly reliable interface of self-aligned CuSiN process with low-k SiC barrier dielectric (k=3.5) for 65nm node and beyond

Usami, T., Ide, T., Kakuhara, Y., Ajima, Y., Ueno, K., Maruyama, T., Yu, Y., Apen, E., Chattopadhyay, K., Van Schravendijk, B., Oda, N. & Sekine, M., 2006, 2006 International Interconnect Technology Conference, IITC. p. 125-127 3 p. 1648665

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electromigration
Electron energy loss spectroscopy
Capacitance
X ray photoelectron spectroscopy
Plasmas
2005

Chip-level performance maximization using ASIS (Application-specific Interconnect Structure) wiring design concept for 45 nm CMOS devices

Oda, N., Imura, H., Kawahara, N., Tagami, M., Kunishima, H., Sone, S., Ohnishi, S., Yamada, K., Kakuhara, Y., Sekine, M., Hayashi, Y. & Ueno, K., 2005, Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2005. p. 1022-1025 4 p. 1609538

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric wiring
Wire
Metals
1 Citation (Scopus)

Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects

Kakuhara, Y. & Ueno, K., 2005, IEEE International Reliability Physics Symposium Proceedings. p. 656-657 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electromigration
Annealing
Degradation
1 Citation (Scopus)

Reliability of damascene copper interconnects

Ueno, K., Ishigarni, T., Kakuhara, Y. & Kawano, M., 2005, Proceedings - Electrochemical Society. Claeys, C. L., Gonzalez, F., Zaima, S., Buchanan, D. A. & Borland, J. O. (eds.). Vol. PV 2005-06. p. 408-418 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Copper
Electromigration
Electroless plating
Metals
Palladium
2004
16 Citations (Scopus)

High reliability Cu interconnection utilizing a low contamination CoWP capping layer

Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., Ivanov, I., Sekine, M. & Ueno, K., 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference. p. 75-77 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electromigration
Contamination
Electroless plating
Testing
Palladium
2000
17 Citations (Scopus)

A high reliability copper dual-damascene interconnection with direct-contact via structure

Ueno, K., Suzuki, M., Matsumoto, A., Motoyama, K., Tonegawa, T., Ito, N., Arita, K., Tsuchiya, Y., Wake, T., Kubo, A., Sugai, K., Oda, N., Miyamoto, H. & Saito, S., 2000, Technical Digest - International Electron Devices Meeting. p. 265-268 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electromigration
Clocks
Current density
Copper
1998
22 Citations (Scopus)

Microstructure and texture of electroplated copper in damascene structures

Gross, M. E., Lingk, C., Siegrist, T., Coleman, E., Brown, W. L., Ueno, K., Tsuchiya, Y., Itoh, N., Ritzdorf, T., Turner, J., Gibbons, K., Klawuhn, E., Biberger, M., Lai, W. Y. C., Miner, J. F. & et al, A., 1998, Materials Research Society Symposium - Proceedings. MRS, Vol. 514. p. 293-298 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Copper
Textures
Physical vapor deposition
Microstructure
Vacuum
1 Citation (Scopus)

Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

Ueno, K., Sekiguchi, A. & Kobayashi, A., 1998 Jan 1, Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc., Vol. 1998-June. p. 119-121 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seed
Chemical vapor deposition
Vacuum
Textures
Sheet resistance
1997
8 Citations (Scopus)

Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

Aoki, H., Yamasaki, S., Usami, T., Tsuchiya, Y., Ito, N., Onodera, T., Hayashi, Y., Ueno, K., Gomi, H. & Aoto, N., 1997, Technical Digest - International Electron Devices Meeting, IEDM. p. 777-780 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Masks
Cleaning
Degradation
Metals
Water
1996
9 Citations (Scopus)

New two-step metal-CMP technique for a high performance multilevel interconnects featured by Al- and 'Cu in low ε, organic film'-metallizations

Hayashi, Y., Onodera, T., Nakajima, T., Kikuta, K., Tsuchiya, Y., Kawahara, J., Takahashi, S., Ueno, K. & Chikaki, S., 1996, Digest of Technical Papers - Symposium on VLSI Technology. IEEE, p. 88-89 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallizing
Metals
1995
12 Citations (Scopus)

Half-micron pitch Cu interconnection technology

Ueno, K., Ohto, K. & Tsunenari, K., 1995, Digest of Technical Papers - Symposium on VLSI Technology. IEEE, p. 27-28 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxidation
Metallorganic chemical vapor deposition
Thermodynamic stability
Alumina
1993
11 Citations (Scopus)

Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

Kikuta, K., Nakajima, T., Ueno, K. & Kikkawa, T., 1993, Technical Digest - International Electron Devices Meeting. Anon (ed.). Piscataway, NJ, United States: Publ by IEEE, p. 285-288 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical mechanical polishing
Sputtering
Aluminum
Electromigration
Electric wiring
1992
10 Citations (Scopus)

A quarter-micron planarized interconnection technology with self-aligned plug

Ueno, K., Ohto, K., Tsunenari, K., Kajiyana, K., Kikuta, K. & Kikkawa, T., 1992 Jan 1, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., p. 305-308 4 p. 307366. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Contact resistance
plugs
Oxide films
Etching
Metals
1988
2 Citations (Scopus)

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Ueno, K., Hida, H., Ogawa, Y., Tsukada, Y. & Nozaki, T., 1988 Dec, Technical Digest - International Electron Devices Meeting. Anon (ed.). p. 846-849 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Transconductance
Substrates
Threshold voltage
Crystal orientation
1985
4 Citations (Scopus)

HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).

Ueno, K., Furutsuka, T., Kanamori, M. & Higashisaka, A., 1985, Conference on Solid State Devices and Materials. Tokyo, Jpn: Japan Soc of Applied Physics, p. 405-408 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Transconductance
Ion implantation
Time delay
Impurities
12 Citations (Scopus)

HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS.

Ueno, K., Furutsuka, T., Toyoshima, H., Kanamori, M. & Higashisaka, A., 1985, Technical Digest - International Electron Devices Meeting. IEEE, p. 82-85 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Molecular beam epitaxy
Gates (transistor)
Refractory metals
Ion implantation