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Research Output 1987 2019

  • 848 Citations
  • 17 h-Index
  • 68 Article
  • 31 Conference contribution
  • 5 Chapter
  • 1 Editorial
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Article

V-band MMIC LNAs using Superlattice-Inserted InP HJFETs.

A.Fujihara, A. F., N.Samoto, A. F. H. M. Y. M., S.Tanaka, S. T. & Tanaka, S., 2001 Jan 1, In : International Conference on Indium Phosphide and Related Componds (2001).

Research output: Contribution to journalArticle

3 Citations (Scopus)

Theoretical analysis of relationships between resonator coupling coefficient and phase noise in microwave negative-resistance oscillators

Hosoya, K., Tanaka, S. & Honjo, K., 2004 Dec, In : IEICE Transactions on Electronics. E87-C, 12, p. 2132-2142 11 p.

Research output: Contribution to journalArticle

Negative resistance
Phase noise
Resonators
Microwaves
Passive networks

The Effect of Emitter Size Scaling on fmax in InP/InGaAs HBTs

Ikenaga, Y., S.Tanaka, Y. I., Fujihara, A. & Tanaka, S., 2002 Jan 1, In : Int. Conf. on Solid State Device and Materials (SSDM). p. 274

Research output: Contribution to journalArticle

18 Citations (Scopus)

Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation.

Tanaka, S., Kasahara, K., Shimawaki, H. & Honjo, K., 1992 Jan 1, In : IEEE Electron Device Letters. 13, 11, p. 560-562 3 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Passivation
Polyimides
Current density
gallium arsenide
4 Citations (Scopus)

Self-Aligned AlInAs/InGaAs HBTs for Digital IC Applications.

S.Tanaka, S. T., M.Madihian, S. T. A. F. B. O., K.Honjo, K. H. & Tanaka, S., 1988 Jul 1, In : Electronics Letters. 24, p. 872-873

Research output: Contribution to journalArticle

4 Citations (Scopus)

SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS.

Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M. & Honjo, K., 1988 Jul 7, In : Electronics Letters. 24, 14, p. 872-873 2 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Substrates
11 Citations (Scopus)

RF HBT oscillators with low-phase noise and high-power performance utilizing a /4 resonator

Hosoya, K., Honjo, K. H. T. A. S. & Tanaka, S., 2006 Aug 1, In : IEEE Transaction on Circuits and Systems. 53, p. 1670-1682

Research output: Contribution to journalArticle

11 Citations (Scopus)

RF HBT oscillators with low-phase noise and high-power performance utilizing (λ/4 ± δ) open-stubs resonator

Hosoya, K., Tanaka, S., Amamiya, Y., Niwa, T., Shimawaki, H. & Honjo, K., 2006 Aug, In : IEEE Transactions on Circuits and Systems I: Regular Papers. 53, 8, p. 1670-1682 13 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Phase noise
Resonators
Microwave oscillators
Lithography
11 Citations (Scopus)

On the Carrier Mobility in Forward-Biased Semiconductor Barriers.

M.S.Lundstrom, M. S. L., S.Tanaka, S. T. & Tanaka, S., 1995 Jan 1, In : Applied Physics Letters. 66, p. 962-964

Research output: Contribution to journalArticle

11 Citations (Scopus)

On the carrier mobility in forward-biased semiconductor barriers

Lundstrom, M. & Tanaka, S., 1995, In : Applied Physics Letters. p. 962 1 p.

Research output: Contribution to journalArticle

carrier mobility
diffusion coefficient
coefficients
kinetic energy
semiconductor diodes
55 Citations (Scopus)

Observation of gap anisotropy in YBa2Cu3 O7-δ by tunneling

Tsai, J. S., Takeuchi, I., Fujita, J., Yoshitake, T., Miura, S., Tanaka, S., Terashima, T., Bando, Y., Iijima, K. & Yamamoto, K., 1988 Jun, In : Physica C: Superconductivity and its Applications. 153-55, 2, p. 1385-1386 2 p.

Research output: Contribution to journalArticle

Anisotropy
anisotropy
Energy gap
Cryogenics
cryogenics
55 Citations (Scopus)

Observation of Gap Anisotropy in YBa2Cu3O7- by Tunneling

I, J. S. T., Y.B, J. S. T. I. T. F. Y. M. T. T., K.Iijima, O., K.Yamamoto, K. Y. & Tanaka, S., 1988 Jan 1, In : Phisica C. 153-155, p. 1385-1386

Research output: Contribution to journalArticle

5 Citations (Scopus)

NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD.

Tanaka, S., Madihian, M., Toyoshima, H., Hayama, N. & Honjo, K., 1987 Jan 1, In : Electronics Letters. 23, 11, p. 562-564 3 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Dry etching
1 Citation (Scopus)
Power amplifiers
Electric lines
Networks (circuits)
Mobile telecommunication systems
Composite materials

Miniaturization of double stub resonators using lumped-element capacitors for MMIC applications

Tanaka, S., Katayose, T., Nishizawa, H., Hosoya, KI., Ishikawa, R. & Honjo, K., 2016 Jul 1, In : IEICE Transactions on Electronics. E99C, 7, p. 830-836 7 p.

Research output: Contribution to journalArticle

Monolithic microwave integrated circuits
Resonators
Capacitors
Phase noise
Capacitance
8 Citations (Scopus)

Microwave Low Noise HBT.

H.Dodo, H. D., H.Shimawaki, H. D. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 1998 Jun 1, In : MTT-S International Microwave Symposium. p. 693-696

Research output: Contribution to journalArticle

5 Citations (Scopus)

Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

Y.Amamiya, Y. A., H.Shimawaki, Y. A. C. W. K. G. T. F., K.Honjo, K. H. & Tanaka, S., 1994 Jan 1, In : IEEE International Electron Device Meeting. p. 199-202

Research output: Contribution to journalArticle

26 Citations (Scopus)

Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

S.Tanaka, S. T., M.Mizuta, S. T. N. H. F. B., K.Honjo, K. H. & Tanaka, S., 1990 Aug 1, In : Electronics Letters. 26, p. 1439-1441

Research output: Contribution to journalArticle

26 Citations (Scopus)

Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 Jan 1, In : Electronics Letters. 26, 18, p. 1439-1441 3 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors

Lateral and vertical scaling of high-f max InP-based HBTs

Tanaka, S., Ikenaga, Y. & Fujihara, A., 2004 Jun, In : IEICE Transactions on Electronics. E87-C, 6, p. 924-928 5 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors

Lateral and Vertical Scaling of High-fmax InP-Based HBTs

Tanaka, S. & Fujihara, S. TY. I., 2004 Jun 1, In : IEICE Transactions on Electoronics. E87-C, p. 924-928

Research output: Contribution to journalArticle

6 Citations (Scopus)

High-Power High-Efficiency HBT Cell Design for 26GHz Power Amplifier.r

S.Tanaka, S. T., Goto, S. T. S. M. A. S., K.Honjo, K. H. & Tanaka, S., 1996 Jan 1, In : MTT-S International Microwave Symposium. 2, p. 843-846

Research output: Contribution to journalArticle

50 Citations (Scopus)

High Power Density 35-GHz HBT Power Amplifiers.

S.Tanaka, S. T., Madihian, M., Toyoshima, H., K.Honjo, K. H. & Tanaka, S., 1998 Dec 1, In : Asia Pasific Microwave Conference (APMC). p. 559-662

Research output: Contribution to journalArticle

1 Citation (Scopus)

High-Power AlGaAs/GaAs HBTs for Ka-Band Operation.

C.W.Kim, C. W. K., N.Goto, C. W. K. S. T. A. F. S. M., K.Honjo, K. H. & Tanaka, S., 1995 Jan 1, In : IEEE GaAs IC Symposium. p. 159-162

Research output: Contribution to journalArticle

1 Citation (Scopus)

High fmax AlGaAs/InGaAs HBT and Their Application to Millimeter Wave Ranges.

K.Honjo, K. H., H.Shimawaki, K. H., S.Tanaka, S. T. & Tanaka, S., 1997 Jan 1, In : Asia-Pacific Microwave Conference. p. 733-736

Research output: Contribution to journalArticle

1 Citation (Scopus)

High-efficiency enhancement-mode power heterojunction FET with Buried p+-GaAs gate structure for low-voltage-operated mobile applications

Bito, Y., Yamakawa, Y., Tanaka, S. & Iwata, N., 2006 Aug, In : IEEE Electron Device Letters. 27, 8, p. 636-639 4 p.

Research output: Contribution to journalArticle

Field effect transistors
Threshold voltage
Heterojunctions
Drain current
Voltage measurement
17 Citations (Scopus)

Flux-based study of carrier transport in thin-base diodes and transistors

Tanaka, S. & Lundstrom, M. S., 1995 Oct, In : IEEE Transactions on Electron Devices. 42, 10, p. 1806-1815 10 p.

Research output: Contribution to journalArticle

Carrier transport
Backscattering
backscattering
Transistors
Diodes

Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe

Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 Feb 15, In : Journal of the Physical Society of Japan. 56, 2, p. 788-793

Research output: Contribution to journalArticle

Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.

S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 Jan 1, In : Journal of Physical Society of Japan. 56, p. 788-793

Research output: Contribution to journalArticle

1 Citation (Scopus)

Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.

S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 Jan 1, In : IEEE Cornell Conference. p. 175-184

Research output: Contribution to journalArticle

Design Considerations for Millimetwer-Wave Power HBTs Based on Gain Performance Analysis.

S.Tanaka, S. T., Y.Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1998 Jan 1, In : IEEE Transaction on Electron Devices. 45, p. 36-44

Research output: Contribution to journalArticle

13 Citations (Scopus)

Design considerations for millimeter-wave power HBT's based on gain performance analysis

Tanaka, SI., Amamiya, Y., Murakami, S., Shimawaki, H., Goto, N., Takayama, Y. & Honjo, K., 1998, In : IEEE Transactions on Electron Devices. 45, 1, p. 36-44 9 p.

Research output: Contribution to journalArticle

Wave power
Heterojunction bipolar transistors
Millimeter waves
millimeter waves
emitters
1 Citation (Scopus)

Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

Kaneko, T., Tanji, K., Amamiya, Y., Niwa, T., Shimawaki, H., Tanaka, S. & Wada, K., 2000 Jan, In : NEC Research and Development. 41, 1, p. 44-48 5 p.

Research output: Contribution to journalArticle

Bipolar transistors
Variable frequency oscillators
Monolithic microwave integrated circuits
Phase noise
Millimeter waves

Composite right-/left-handed transmission line stub resonators for X-band low phase-noise oscillators

Tanaka, S., Nishizawa, H. & Takata, K., 2018 Oct 1, In : IEICE Transactions on Electronics. E101C, 10, p. 734-743 10 p.

Research output: Contribution to journalArticle

Phase noise
Resonators
Electric lines
Composite materials
Networks (circuits)
2 Citations (Scopus)

Composite-collector InGaP/GaAs HBTs for linear power amplifiers

Niwa, T., Ishigaki, T., Kurosawa, N., Shimawaki, H. & Tanaka, S., 2005 Apr, In : IEICE Transactions on Electronics. E88-C, 4, p. 672-677 6 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Power amplifiers
Composite materials
Electric breakdown
Current density
7 Citations (Scopus)

Compact stub resonators with enhanced Q-factor using negative order resonance modes of non-uniform CRLH transmission lines

Tanaka, S., Mukaida, K. & Takata, K., 2015 Mar 1, In : IEICE Transactions on Electronics. E98C, 3, p. 252-259 8 p.

Research output: Contribution to journalArticle

Resonators
Electric lines
Microstrip lines
Composite materials
Insertion losses
3 Citations (Scopus)

Common Base HBTs for Ka-Band Applications.

S.Tanaka, S. T., Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1997 Jan 1, In : Topical Symposium on Millimeter Waves. p. 27-30

Research output: Contribution to journalArticle

Class-F GaN HEMT amplifiers using compact CRLH harmonic tuning stubs designed based on negative order resonance modes

Tanaka, S., Koizumi, S., Ishikawa & Honjo, K., 2019 Jan 1, In : IEICE Transactions on Electronics. E102C, 10, p. 691-698 8 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Tuning
Networks (circuits)
Composite materials
Microstrip lines
2 Citations (Scopus)
Organic chemicals
Heterojunction bipolar transistors
bipolar transistors
Molecular beam epitaxy
metalorganic chemical vapor deposition
30 Citations (Scopus)

Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 Jul 1, In : IEEE Transaction on Electron Devices. 40, p. 1194-1201

Research output: Contribution to journalArticle

30 Citations (Scopus)

Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP

Tanaka, S., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 Jul, In : IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.

Research output: Contribution to journalArticle

Induced currents
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
degradation
5 Citations (Scopus)

Attenuate Influence of Parasitic Elements in 13.56-MHz Inverter for Wireless Power Transfer Systems

Trung, N. K., Ogata, T., Tanaka, S. & Akatsu, K., 2018 Apr 1, In : IEEE Transactions on Power Electronics. 33, 4, p. 3218-3231 14 p., 7934398.

Research output: Contribution to journalArticle

Networks (circuits)
Printed circuit boards
Damping
Switching frequency
Signal interference
9 Citations (Scopus)

A Small-Signal One-Flux Analysis of Short-Base Transport.

A.Alam, A. A., S.Tanaka, A. A., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 Jan 1, In : Solid-State Electronics. 38, p. 177-182

Research output: Contribution to journalArticle

9 Citations (Scopus)

A small-signal, one-flux analysis of short-base transport

Alam, M. A., Tanaka, S. I. & Lundstrom, M. S., 1995, In : Solid State Electronics. 38, 1, p. 177-182 6 p.

Research output: Contribution to journalArticle

Fluxes
Ballistics
ballistics
Electron transport properties
Boltzmann equation

Application of Microwave and Millimeter-wave Circuit Technologies to InGaP-HBT ICs for 40-Gbps Optical-transmission Systems

Hosoya, K., Suzuki, Y., Amamiya, Y., Yamazaki, Z., Mamada, M., Fujihara, A., Kawanaka, M., Tanaka, S., Wada, S. & Hida, H., 2007 Jan 1, In : IEICE Transactions on Electronic. E90-C, p. 1685-1701

Research output: Contribution to journalArticle

2 Citations (Scopus)

Application of AlGaAs/GaAs HBT's to high-speed CML logic family fabrication.

Madihian, M., Tanaka, S., Hayama, N., Okamoto, A. & Honjo, K., 1989 Apr, In : IEEE Transactions on Electron Devices. 36, 4 pt 1, p. 625-631 7 p.

Research output: Contribution to journalArticle

Logic gates
Heterojunction bipolar transistors
logic
aluminum gallium arsenides
Time delay
5 Citations (Scopus)

A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method

S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 May 1, In : Electronics Letters. 23, p. 562-564

Research output: Contribution to journalArticle

3 Citations (Scopus)

A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.

S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 Jan 1, In : IEEE GaAs IC Symposium. p. 113-116

Research output: Contribution to journalArticle

An InGaP-HBT IC chipset for 40-Gbps optical transmission systems on the basis of a microwave circuit design scheme.

K.Hosoya, K. H., S.Wada, K. H. Y. S. A. Y. M. F. K., H.Hida, H. H. & Tanaka, S., 2003 Jan 1, In : European Microwave Conference. p. 627-630

Research output: Contribution to journalArticle

5 Citations (Scopus)