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Research Output 1987 2019

  • 837 Citations
  • 17 h-Index
  • 68 Article
  • 30 Conference contribution
  • 5 Chapter
  • 1 Editorial
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Article
1993
2 Citations (Scopus)

A Flux-Based Approach to HBT Device Modeling.

S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1993 Jan 1, In : IEEE International Electron Device Meeting. p. 505-509

Research output: Contribution to journalArticle

30 Citations (Scopus)

Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP

Tanaka, S., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 Jul, In : IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.

Research output: Contribution to journalArticle

Induced currents
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
degradation
30 Citations (Scopus)

Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 Jul 1, In : IEEE Transaction on Electron Devices. 40, p. 1194-1201

Research output: Contribution to journalArticle

1992
18 Citations (Scopus)

Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation.

Tanaka, S., Kasahara, K., Shimawaki, H. & Honjo, K., 1992 Jan 1, In : IEEE Electron Device Letters. 13, 11, p. 560-562 3 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Passivation
Polyimides
Current density
gallium arsenide
1990

1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.

N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 Jan 1, In : Asia-Pacific Microwave Conference 1990. p. 1039-1041

Research output: Contribution to journalArticle

26 Citations (Scopus)

Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 Jan 1, In : Electronics Letters. 26, 18, p. 1439-1441 3 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
26 Citations (Scopus)

Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

S.Tanaka, S. T., M.Mizuta, S. T. N. H. F. B., K.Honjo, K. H. & Tanaka, S., 1990 Aug 1, In : Electronics Letters. 26, p. 1439-1441

Research output: Contribution to journalArticle

1989
2 Citations (Scopus)

Application of AlGaAs/GaAs HBT's to high-speed CML logic family fabrication.

Madihian, M., Tanaka, S., Hayama, N., Okamoto, A. & Honjo, K., 1989 Apr, In : IEEE Transactions on Electron Devices. 36, 4 pt 1, p. 625-631 7 p.

Research output: Contribution to journalArticle

Logic gates
Heterojunction bipolar transistors
logic
aluminum gallium arsenides
Time delay
1 Citation (Scopus)

Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.

S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 Jan 1, In : IEEE Cornell Conference. p. 175-184

Research output: Contribution to journalArticle

1988
54 Citations (Scopus)

Observation of Gap Anisotropy in YBa2Cu3O7- by Tunneling

I, J. S. T., Y.B, J. S. T. I. T. F. Y. M. T. T., K.Iijima, O., K.Yamamoto, K. Y. & Tanaka, S., 1988 Jan 1, In : Phisica C. 153-155, p. 1385-1386

Research output: Contribution to journalArticle

54 Citations (Scopus)

Observation of gap anisotropy in YBa2Cu3 O7-δ by tunneling

Tsai, J. S., Takeuchi, I., Fujita, J., Yoshitake, T., Miura, S., Tanaka, S., Terashima, T., Bando, Y., Iijima, K. & Yamamoto, K., 1988 Jun, In : Physica C: Superconductivity and its Applications. 153-55, 2, p. 1385-1386 2 p.

Research output: Contribution to journalArticle

Anisotropy
anisotropy
Energy gap
Cryogenics
cryogenics
4 Citations (Scopus)

SELF-ALIGNED AlInAs/GaInAs HBTs FOR DIGITAL IC APPLICATIONS.

Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M. & Honjo, K., 1988 Jul 7, In : Electronics Letters. 24, 14, p. 872-873 2 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Substrates
4 Citations (Scopus)

Self-Aligned AlInAs/InGaAs HBTs for Digital IC Applications.

S.Tanaka, S. T., M.Madihian, S. T. A. F. B. O., K.Honjo, K. H. & Tanaka, S., 1988 Jul 1, In : Electronics Letters. 24, p. 872-873

Research output: Contribution to journalArticle

1987
3 Citations (Scopus)

A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.

S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 Jan 1, In : IEEE GaAs IC Symposium. p. 113-116

Research output: Contribution to journalArticle

4 Citations (Scopus)

A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method

S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 May 1, In : Electronics Letters. 23, p. 562-564

Research output: Contribution to journalArticle

Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.

S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 Jan 1, In : Journal of Physical Society of Japan. 56, p. 788-793

Research output: Contribution to journalArticle

Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe

Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 Feb 15, In : Journal of the Physical Society of Japan. 56, 2, p. 788-793

Research output: Contribution to journalArticle

4 Citations (Scopus)

NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD.

Tanaka, S., Madihian, M., Toyoshima, H., Hayama, N. & Honjo, K., 1987 Jan 1, In : Electronics Letters. 23, 11, p. 562-564 3 p.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Dry etching