• 1582 Citations
  • 20 h-Index
1983 …2019

Research output per year

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Article
1993

Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluorotrialkoxysilane Group and Pure Water as Gas Sources

T.Homma, T. H., R.Yamaguchi, R. Y., Y.Murao, Y. M. & Homma, T., 1993 Dec 1, In : Journal of The Electochemical Society. 140, p. 3599-3603

Research output: Contribution to journalArticle

23 Citations (Scopus)
23 Citations (Scopus)

Stability of A New Polimide Siloxane Film as Interlayer Dielectrics of ULSI Multilevel Interconnections

T.Homma, T. H., Y.Kutsuzawa, Y. K., K.Kunimune, K. K., Y.Murao, Y. M. & Homma, T., 1993 Nov 25, In : Thin Solid Films. 235, p. 80-85

Research output: Contribution to journalArticle

20 Citations (Scopus)

Stability of a new polyimide siloxane film as interlayer dielectrics of ULSI multilevel interconnections

Homma, T., Kutsuzawa, Y., Kunimune, K. & Murao, Y., 1993 Nov 25, In : Thin Solid Films. 235, 1-2, p. 80-85 6 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
1992

A Fully Planarized Multilevel Interconnection Technology Using Selective TEOS-Ozone APCVD

M.Suzuki, M. S., T.Homma, T. H., Y.Murao, Y. M. & Homma, T., 1992 Dec 13, In : Proceedings of IEEE International Electron Devices Meeting. p. 293-296

Research output: Contribution to journalArticle

A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition

T.Horiuchi, T. H., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O. & Homma, T., 1992 Jun 2, In : 1992 Symposium on VLSI Technology, Technical Digest. p. 88-89

Research output: Contribution to journalArticle

2 Citations (Scopus)

A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)

T.Homma, T. H., Y.Murao, Y. M. & Homma, T., 1992 Jun 9, In : Proceedings of 9th VLSI Multilevel Interconnection Conference. p. 65-71

Research output: Contribution to journalArticle

1991

A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition

K.Kanba, K. K., T.Horiuchi, T. H., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O. & Homma, T., 1991 Dec 8, In : Proceedings of IEEE International Electron Devices Meeting. p. 637-640

Research output: Contribution to journalArticle

4 Citations (Scopus)

A Room Temperature CVD Technology for Interlayer in Deep submicron Multilevel Interconnection

T.Homma, T. H., Y.Murao, Y. M. & Homma, T., 1991 Dec 8, In : Proceedings of IEEE International Electron Devices Meeting. p. 289-292

Research output: Contribution to journalArticle

5 Citations (Scopus)

Fully planarized multilevel interconnection using selective SiO2 deposition

Homma, T., Katoh, T., Yamada, Y., Shimizu, J. & Murao, Y., 1991 Jul 1, In : NEC Research and Development. 32, 3, p. 315-322 8 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Fully Planarized Multilevel Interconnection Using Selective SiO2 Deposition

Homma, T. & Murao, T. HT. KY. YJ. SY., 1991 Jul 1, In : NEC Research & Development. 32, p. 315-322

Research output: Contribution to journalArticle

13 Citations (Scopus)
1990

Interlayer Film Planarization

Numasawa, Y., Akimoto, Y. NY. IT. HK. & Homma, T., 1990 Oct 22, In : Semicon Japan, Semiconductor Equipment and Materials International, Technical Proceedings. p. 245-252

Research output: Contribution to journalArticle

Interlayer Film Planarization Technology

Y.Numasawa, Y. N., Y.Ikeda, Y. I., T.Homma, T. H., K.Akimoto, K. A. & Homma, T., 1990 Oct 23, In : Semicon JAPAN Proceedings. p. 245-252

Research output: Contribution to journalArticle

1988

A New Polyimide Siloxane Film for Interlayer Dielectrics in Sub-micron Multilevel Interconnection

T.Homma, T. H., K.Eguchi, K. E., Y.Numasawa, Y. N., T.Kikkawa, T. K., Y.Hokari, Y. H., K.Hamano, K. H. & Homma, T., 1988 Jun 13, In : Proceedings of 5th IEEE VLSI Multilevel Interconnection Conference. p. 279-285

Research output: Contribution to journalArticle

6 Citations (Scopus)

New polyimide film paves way for super high-speed logic devices

Homma, T., Numasawa, Y., Murao, Y. & Hamano, K., 1988 Nov 1, In : JEE. Journal of electronic engineering. 25, 263, p. 74-79 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
1984

A New Trench Isolation Technology as A Replacement of LOCOS

H.Mikoshiba, H. M., T.Homma, T. H., K.Hamano, K. H. & Homma, T., 1984 Dec 9, In : Proceedings of IEEE International Electron Devices Meeting. p. 578-581

Research output: Contribution to journalArticle

10 Citations (Scopus)
1983

A Long-Lasting Polyacetylene Battery with High Energy Density

T.Nagatomo, T. N., T.Honma, T. H., C.Yamamoto, C. Y., K.Negishi, K. N., O.Omoto, O. O. & Homma, T., 1983 May 20, In : Japanese Journal of Applied Physics Letter. 22, p. L275-L277

Research output: Contribution to journalArticle

16 Citations (Scopus)