• 417 Citations
  • 12 h-Index
1984 …2019

Research output per year

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Research Output

Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

Nabatame, T., Yamamoto, I., Sawada, T., Ohi, A., Dao, T. D., Ohishi, T. & Nagao, T., 2019 Jan 1, Atomic Layer Deposition Applications 15. Roozeboom, F., De Gendt, S., Dendooven, J., Elam, J. W., van der Straten, O., Liu, C., Sundaram, G. & Illiberi, A. (eds.). 3 ed. Electrochemical Society Inc., p. 15-21 7 p. (ECS Transactions; vol. 92, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

    Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 Jan 31, In : Semiconductor Science and Technology. 34, 3, 034001.

    Research output: Contribution to journalArticle

  • 5 Citations (Scopus)

    Direct writing of copper micropatterns using near-infrared femtosecond laser-pulse-induced reduction of glyoxylic acid copper complex

    Mizoshiri, M., Aoyama, K., Uetsuki, A. & Ohishi, T., 2019 Jun 1, In : Micromachines. 10, 6, 401.

    Research output: Contribution to journalArticle

    Open Access
  • 2 Citations (Scopus)
  • Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

    Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 Jan 1, In : Applied Physics Express. 12, 1, 011009.

    Research output: Contribution to journalArticle

  • 5 Citations (Scopus)