• 395 Citations
  • 12 h-Index
1984 …2019
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Fingerprint Dive into the research topics where Tomoji Ohishi is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

Sol-gel process Engineering & Materials Science
gels Physics & Astronomy
Thin films Engineering & Materials Science
rhodamine B Chemical Compounds
Tantalum oxides Engineering & Materials Science
thin films Physics & Astronomy
Annealing Engineering & Materials Science
capacitors Physics & Astronomy

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Research Output 1984 2019

  • 395 Citations
  • 12 h-Index
  • 69 Article
  • 5 Conference contribution
  • 1 Chapter
4 Citations (Scopus)

Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 Jan 31, In : Semiconductor Science and Technology. 34, 3, 034001.

Research output: Contribution to journalArticle

Metallizing
Oxides
capacitors
Capacitors
Annealing

Direct writing of copper micropatterns using near-infrared femtosecond laser-pulse-induced reduction of glyoxylic acid copper complex

Mizoshiri, M., Aoyama, K., Uetsuki, A. & Ohishi, T., 2019 Jun 1, In : Micromachines. 10, 6, 401.

Research output: Contribution to journalArticle

Open Access
Ultrashort pulses
Linewidth
Infrared radiation
Copper
Acids
Polyethylene Terephthalates
polyethylene terephthalate
excimers
Silicon Dioxide
Polyethylene terephthalates
2 Citations (Scopus)

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 Jan 1, In : Applied Physics Express. 12, 1, 011009.

Research output: Contribution to journalArticle

Hafnium
hafnium
Gate dielectrics
metal oxide semiconductors
Silicates

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y. & Ohishi, T., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 368-370 3 p. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Annealing
annealing
Interface states
Capacitors
capacitors