• 427 Citations
  • 12 h-Index
1984 …2019

Research output per year

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Research Output

2019

Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

Nabatame, T., Yamamoto, I., Sawada, T., Ohi, A., Dao, T. D., Ohishi, T. & Nagao, T., 2019 Jan 1, Atomic Layer Deposition Applications 15. Roozeboom, F., De Gendt, S., Dendooven, J., Elam, J. W., van der Straten, O., Liu, C., Sundaram, G. & Illiberi, A. (eds.). 3 ed. Electrochemical Society Inc., p. 15-21 7 p. (ECS Transactions; vol. 92, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 Jan 31, In : Semiconductor Science and Technology. 34, 3, 034001.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Direct writing of copper micropatterns using near-infrared femtosecond laser-pulse-induced reduction of glyoxylic acid copper complex

Mizoshiri, M., Aoyama, K., Uetsuki, A. & Ohishi, T., 2019 Jun 1, In : Micromachines. 10, 6, 401.

Research output: Contribution to journalArticle

Open Access
2 Citations (Scopus)

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 Jan 1, In : Applied Physics Express. 12, 1, 011009.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y. & Ohishi, T., 2019 Mar, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 368-370 3 p. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Sawada, T., Nabatame, T., Dao, T. D., Yamamoto, I., Kurishima, K., Onaya, T., Ohi, A., Ito, K., Takahashi, M., Kohama, K., Ohishi, T., Ogura, A. & Nagao, T., 2017 Nov 1, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35, 6, 061503.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2016

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Taweesup, K., Yamamoto, I., Chikyow, T., Lothongkum, G., Tsukagoshi, K., Ohishi, T., Tungasmita, S., Visuttipitukul, P., Ito, K., Takahashi, M. & Nabatame, T., 2016 Jan 1, In : Thin Solid Films. 598, p. 126-130 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., Ohi, A., Yamamoto, I., Ohishi, T., Chikyow, T. & Ogura, A., 2016 Jan 1, Thin Film Transistors 13, TFT 13. Kuo, Y. (ed.). 10 ed. Electrochemical Society Inc., p. 149-156 8 p. (ECS Transactions; vol. 75, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2015

Fabrication of copper wire using glyoxylic acid copper complex and laser irradiation in air

Ohishi, T. & Kimura, R., 2015, In : Scientific Reports. 6, p. 799-808

Research output: Contribution to journalArticle

2014

Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature

Nabatame, T., Ohi, A., Chikyo, T., Kimura, M., Yamada, H. & Ohishi, T., 2014 May, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32, 3, 03D121.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Preparation and gas barrier characteristics of polysilazane-derived silica thin films using ultraviolet irradiation

Ohishi, T., Sone, S. & Yanagida, K., 2014, In : Scientific Reports. 5, p. 105-111 7 p.

Research output: Contribution to journalArticle

2012

Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 Feb 1, In : Thin Solid Films. 520, 8, p. 3387-3391 5 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2012 May 6, In : 221st Electro Chemical Society Meeting, Seattle (USA).

Research output: Contribution to journalArticle

Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 Nov 19, Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. p. 49-59 11 p. (ECS Transactions; vol. 45, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, H. Y., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 May 25, In : 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).

Research output: Contribution to journalArticle

Preparation and properties of sol-gel thin film containing quinacridone latent pigment by using laser irradiation

Ohishi, T. & Ishitsuka, H., 2011 Jan 1, In : IOP Conference Series: Materials Science and Engineering. 18, SYMPOSIUM 2A, 032010.

Research output: Contribution to journalConference article

Open Access
2 Citations (Scopus)

Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura, M. K., T.Nabatame, T. N., H.Yamada, H. Y., A.Ohi, A. O., T.Chikyow, T. C., T.Ohishi, T. O. & Oishi, T., 2011 Nov 4, In : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

Research output: Contribution to journalArticle

The effect of redox annealing on flatband voltage in ITO/HfO2 MOS capacitors

H.Yamada, H. Y., T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 Nov 4, In : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

Research output: Contribution to journalArticle

2009

Micro-pattering of siloxane films by proton beam writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 Oct 26, In : Journal of Photopolymer Science and Technology. 22, 2, p. 239-243 5 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Micro-patterning of Siloxane Films by Proton Beam Writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 Jun 1, In : Journal of Photopolymer Science and Technology, Vol.22, pp.239-243(2009). 22, p. 239-243

Research output: Contribution to journalArticle

2008

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame, T. N., Y.Nunoshige, Y. N., M.Kadoshima, M. K., H.Takaba, H. T., K.Segawa, K. S., S.Kimura, S. K., H.Satake, H. S., H.Ota, H. O., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 28, In : Microelectronics Engineering.

Research output: Contribution to journalArticle

Changes in effective work function of HfxRu1-x alloy gate electrode

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., Satake, H., Ota, H., Ohishi, T. & Toriumi, A., 2008 Jul 1, In : Microelectronic Engineering. 85, 7, p. 1524-1528 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Effect of ultrasound sonication on electroplating of iridium

Ohsaka, T., Isaka, M., Hirano, K. & Ohishi, T., 2008 Apr, In : Ultrasonics Sonochemistry. 15, 4, p. 283-288 6 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ohta, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 23, In : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

Research output: Contribution to journalArticle

Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ota, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 24, In : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

Research output: Contribution to journalArticle

2007

Effect of alcohol addition on electroplating of iridium

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 Sep 1, In : Transactions of the Institute of Metal Finishing. 85, 5, p. 260-264 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Effect of alcol addition on electroplating of Irudium

T.Ohsaka, T. O., Y.Matsubara, Y. M., K.Hirano, K. H., T.Ohishi, T. O. & Oishi, T., 2007 Sep 28, In : 58th Annual Meeting of the International Society of Electrochemistry (Canada).

Research output: Contribution to journalArticle

Electroplating of iridium - Cobalt alloy

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 Sep 1, In : Transactions of the Institute of Metal Finishing. 85, 5, p. 265-269 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Electroplating of Iridium-Cobalt Alloy

Ohsaka, T., Matsubara, Y., Hirano, K., Ohshi, T. & Oishi, T., 2007 Nov 1, In : Transactions of the Institute of Metal Finishing. 85, p. 265

Research output: Contribution to journalArticle

7 Citations (Scopus)

Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Nunoshige, Y., Nabatame, T., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Nov 12, In : the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan).

Research output: Contribution to journalArticle

Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige, Y. N., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Nov 12, In : Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces.

Research output: Contribution to journalArticle

What is the essence of vFB shifts in high-k gate stack?

Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T. & Toriumi, A., 2007 Dec 1, ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 ed. p. 543-555 13 p. (ECS Transactions; vol. 11, no. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

What is the essence of Vfb shifts in high-k gate stack?

T.Nabatame, T. N., K.Iwamoto, K. I., K.Akiyama, K. A., Y.Nunoshige, Y. N., H.Nunoshige, H. N., H.Ota, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Oct 7, In : Electrochemical Society (ECS) Transactions. 11, p. 543

Research output: Contribution to journalArticle

11 Citations (Scopus)
2006

Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura, S. K., K.Iwamoto, K. I., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2006 Nov 8, In : 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.

Research output: Contribution to journalArticle

The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Takaba, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2006 Dec 17, In : Materials Science in Semiconductor Orocessing. 9, p. 975-979

Research output: Contribution to journalArticle

12 Citations (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Tanabe, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., A.Toriumi, A. T., Ohishi, T. & Oishi, T., 2006 Jun 10, In : 2006 European Materials Research Society Spring Meeting (Nice,France).

Research output: Contribution to journalArticle

12 Citations (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

Nabatame, T., Segawa, K., Kadoshima, M., Takaba, H., Iwamoto, K., Kimura, S., Nunoshige, Y., Satake, H., Ohishi, T. & Toriumi, A., 2006 Dec 1, In : Materials Science in Semiconductor Processing. 9, 6, p. 975-979 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata, H. T., K.Segawa, K. S., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Satake, H. S., T.Ohishi, T. O., A.Toroumi, A. T. & Oishi, T., 2006 Jul 25, In : 6th International Coference on Atomic Layer Deposition (Seoul, Korea).

Research output: Contribution to journalArticle

2005

Chemical Processing of Ceramics

T.Ohishi, T. O. & Oishi, T., 2005 May 1, In : CRC PRESS.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Chemical Processing of Ceramics,Second Edition

Lee, B. I., J.K.Pope, J. K. P. & Oishi, T., 2005 Mar 25, In : Chemical Processing of Ceramics.

Research output: Contribution to journalArticle

Preparation and properties of SiO2 thin films by the sol-gel method using photoirradiation and its application to surface coating for display

Ohishi, T., 2005 Jan 1, Chemical Processing of Ceramics, Second Edition. CRC Press, p. 421-436 16 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)
2004
4 Citations (Scopus)
2003

An ethoxy-silano rhodamine B derivative and its application to surface coatings on display devices

Ohishi, T., 2003 Dec 15, In : Journal of Non-Crystalline Solids. 332, 1-3, p. 80-86 7 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)