• 399 Citations
  • 12 h-Index
1984 …2019
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Research Output 1984 2019

  • 399 Citations
  • 12 h-Index
  • 69 Article
  • 5 Conference contribution
  • 1 Chapter
2019
4 Citations (Scopus)

Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 Jan 31, In : Semiconductor Science and Technology. 34, 3, 034001.

Research output: Contribution to journalArticle

Metallizing
Oxides
capacitors
Capacitors
Annealing

Direct writing of copper micropatterns using near-infrared femtosecond laser-pulse-induced reduction of glyoxylic acid copper complex

Mizoshiri, M., Aoyama, K., Uetsuki, A. & Ohishi, T., 2019 Jun 1, In : Micromachines. 10, 6, 401.

Research output: Contribution to journalArticle

Open Access
Ultrashort pulses
Linewidth
Infrared radiation
Copper
Acids
Polyethylene Terephthalates
polyethylene terephthalate
excimers
Silicon Dioxide
Polyethylene terephthalates
2 Citations (Scopus)

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 Jan 1, In : Applied Physics Express. 12, 1, 011009.

Research output: Contribution to journalArticle

Hafnium
hafnium
Gate dielectrics
metal oxide semiconductors
Silicates

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y. & Ohishi, T., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 368-370 3 p. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Annealing
annealing
Interface states
Capacitors
capacitors
2017
2 Citations (Scopus)

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Sawada, T., Nabatame, T., Dao, T. D., Yamamoto, I., Kurishima, K., Onaya, T., Ohi, A., Ito, K., Takahashi, M., Kohama, K., Ohishi, T., Ogura, A. & Nagao, T., 2017 Nov 1, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35, 6, 061503.

Research output: Contribution to journalArticle

Buffer layers
capacitors
Capacitors
buffers
Electrodes
2016
1 Citation (Scopus)

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Taweesup, K., Yamamoto, I., Chikyow, T., Lothongkum, G., Tsukagoshi, K., Ohishi, T., Tungasmita, S., Visuttipitukul, P., Ito, K., Takahashi, M. & Nabatame, T., 2016 Jan 1, In : Thin Solid Films. 598, p. 126-130 5 p.

Research output: Contribution to journalArticle

Ruthenium
Tin oxides
indium oxides
Indium
Oxides
2 Citations (Scopus)

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., Ohi, A., Yamamoto, I., Ohishi, T., Chikyow, T. & Ogura, A., 2016, Thin Film Transistors 13, TFT 13. 10 ed. Electrochemical Society Inc., Vol. 75. p. 149-156 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Indium
Tungsten
Carbon
Oxides
2015

Fabrication of copper wire using glyoxylic acid copper complex and laser irradiation in air

Ohishi, T. & Kimura, R., 2015, In : Scientific Reports. 6, p. 799-808

Research output: Contribution to journalArticle

2014
13 Citations (Scopus)

Electrical properties of anatase TiO<inf>2</inf> films by atomic layer deposition and low annealing temperature

Nabatame, T., Ohi, A., Chikyo, T., Kimura, M., Yamada, H. & Ohishi, T., 2014 May 1, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 3, 03D121.

Research output: Contribution to journalArticle

Atomic layer deposition
atomic layer epitaxy
anatase
Titanium dioxide
Electric properties

Preparation and gas barrier characteristics of polysilazane-derived silica thin films using ultraviolet irradiation

Ohishi, T., Sone, S. & Yanagida, K., 2014, In : Scientific Reports. 5, p. 105-111 7 p.

Research output: Contribution to journalArticle

2012
8 Citations (Scopus)

Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 Feb 1, In : Thin Solid Films. 520, 8, p. 3387-3391 5 p.

Research output: Contribution to journalArticle

Oxygen
shift
Annealing
Electric potential
electric potential

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2012 May 6, In : 221st Electro Chemical Society Meeting, Seattle (USA).

Research output: Contribution to journalArticle

Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012, ECS Transactions. 3 ed. Vol. 45. p. 49-59 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Annealing
Electrodes
Metals
MOS capacitors
Atoms
2011

Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, H. Y., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 May 25, In : 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).

Research output: Contribution to journalArticle

2 Citations (Scopus)

Preparation and properties of sol-gel thin film containing quinacridone latent pigment by using laser irradiation

Ohishi, T. & Ishitsuka, H., 2011, IOP Conference Series: Materials Science and Engineering. SYMPOSIUM 2A ed. Institute of Physics Publishing, Vol. 18. 032010

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser beam effects
Pigments
Sol-gels
Thin films
Transparency

Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura, M. K., T.Nabatame, T. N., H.Yamada, H. Y., A.Ohi, A. O., T.Chikyow, T. C., T.Ohishi, T. O. & Oishi, T., 2011 Nov 4, In : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

Research output: Contribution to journalArticle

The effect of redox annealing on flatband voltage in ITO/HfO2 MOS capacitors

H.Yamada, H. Y., T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 Nov 4, In : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

Research output: Contribution to journalArticle

2009
6 Citations (Scopus)

Micro-pattering of siloxane films by proton beam writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009, In : Journal of Photopolymer Science and Technology. 22, 2, p. 239-243 5 p.

Research output: Contribution to journalArticle

Siloxanes
Proton beams

Micro-patterning of Siloxane Films by Proton Beam Writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 Jun 1, In : Journal of Photopolymer Science and Technology, Vol.22, pp.239-243(2009). 22, p. 239-243

Research output: Contribution to journalArticle

2008

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame, T. N., Y.Nunoshige, Y. N., M.Kadoshima, M. K., H.Takaba, H. T., K.Segawa, K. S., S.Kimura, S. K., H.Satake, H. S., H.Ota, H. O., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 28, In : Microelectronics Engineering.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Changes in effective work function of HfxRu1-x alloy gate electrode

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., Satake, H., Ota, H., Ohishi, T. & Toriumi, A., 2008 Jul, In : Microelectronic Engineering. 85, 7, p. 1524-1528 5 p.

Research output: Contribution to journalArticle

Electrodes
electrodes
Crystalline materials
Capacitors
metal oxide semiconductors
30 Citations (Scopus)

Effect of ultrasound sonication on electroplating of iridium

Ohsaka, T., Isaka, M., Hirano, K. & Ohishi, T., 2008 Apr, In : Ultrasonics Sonochemistry. 15, 4, p. 283-288 6 p.

Research output: Contribution to journalArticle

Iridium
Sonication
electroplating
Electroplating
iridium

Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ohta, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 23, In : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

Research output: Contribution to journalArticle

Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ota, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 24, In : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

Research output: Contribution to journalArticle

2007
7 Citations (Scopus)

Effect of alcohol addition on electroplating of iridium

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 Sep, In : Transactions of the Institute of Metal Finishing. 85, 5, p. 260-264 5 p.

Research output: Contribution to journalArticle

Iridium
electroplating
Electroplating
iridium
alcohols

Effect of alcol addition on electroplating of Irudium

T.Ohsaka, T. O., Y.Matsubara, Y. M., K.Hirano, K. H., T.Ohishi, T. O. & Oishi, T., 2007 Sep 28, In : 58th Annual Meeting of the International Society of Electrochemistry (Canada).

Research output: Contribution to journalArticle

6 Citations (Scopus)

Electroplating of iridium - Cobalt alloy

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 Sep, In : Transactions of the Institute of Metal Finishing. 85, 5, p. 265-269 5 p.

Research output: Contribution to journalArticle

iridium alloys
Iridium alloys
cobalt alloys
Cobalt alloys
electroplating
6 Citations (Scopus)

Electroplating of Iridium-Cobalt Alloy

Ohsaka, T., Matsubara, Y., Hirano, K., Ohshi, T. & Oishi, T., 2007 Nov 1, In : Transactions of the Institute of Metal Finishing. 85, p. 265

Research output: Contribution to journalArticle

Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Nunoshige, Y., Nabatame, T., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Nov 12, In : the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan).

Research output: Contribution to journalArticle

Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige, Y. N., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Nov 12, In : Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces.

Research output: Contribution to journalArticle

11 Citations (Scopus)

What is the essence of vFB shifts in high-k gate stack?

Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T. & Toriumi, A., 2007, ECS Transactions. 4 ed. Vol. 11. p. 543-555 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxygen vacancies
Oxidation
Metals
High-k dielectric
11 Citations (Scopus)

What is the essence of Vfb shifts in high-k gate stack?

T.Nabatame, T. N., K.Iwamoto, K. I., K.Akiyama, K. A., Y.Nunoshige, Y. N., H.Nunoshige, H. N., H.Ota, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Oct 7, In : Electrochemical Society (ECS) Transactions. 11, p. 543

Research output: Contribution to journalArticle

2006

Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura, S. K., K.Iwamoto, K. I., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2006 Nov 8, In : 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.

Research output: Contribution to journalArticle

12 Citations (Scopus)

The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Takaba, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2006 Dec 17, In : Materials Science in Semiconductor Orocessing. 9, p. 975-979

Research output: Contribution to journalArticle

12 Citations (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

Nabatame, T., Segawa, K., Kadoshima, M., Takaba, H., Iwamoto, K., Kimura, S., Nunoshige, Y., Satake, H., Ohishi, T. & Toriumi, A., 2006 Dec, In : Materials Science in Semiconductor Processing. 9, 6, p. 975-979 5 p.

Research output: Contribution to journalArticle

MOS capacitors
capacitors
Oxygen
Electrodes
electrodes
12 Citations (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Tanabe, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., A.Toriumi, A. T., Ohishi, T. & Oishi, T., 2006 Jun 10, In : 2006 European Materials Research Society Spring Meeting (Nice,France).

Research output: Contribution to journalArticle

Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata, H. T., K.Segawa, K. S., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Satake, H. S., T.Ohishi, T. O., A.Toroumi, A. T. & Oishi, T., 2006 Jul 25, In : 6th International Coference on Atomic Layer Deposition (Seoul, Korea).

Research output: Contribution to journalArticle

2005
22 Citations (Scopus)

Chemical Processing of Ceramics

T.Ohishi, T. O. & Oishi, T., 2005 May 1, In : CRC PRESS.

Research output: Contribution to journalArticle

Chemical Processing of Ceramics,Second Edition

Lee, B. I., J.K.Pope, J. K. P. & Oishi, T., 2005 Mar 25, In : Chemical Processing of Ceramics.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Preparation and properties of SiO2 thin films by the sol-gel method using photoirradiation and its application to surface coating for display

Ohishi, T., 2005 Jan 1, Chemical Processing of Ceramics, Second Edition. CRC Press, p. 421-436 16 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Sol-gel process
Display devices
Thin films
Coatings
2004
4 Citations (Scopus)
rhodamine B
rhodamine
surface treatment
Sol-gels
Surface treatment
2003
20 Citations (Scopus)

An ethoxy-silano rhodamine B derivative and its application to surface coatings on display devices

Ohishi, T., 2003 Dec 15, In : Journal of Non-Crystalline Solids. 332, 1-3, p. 80-86 7 p.

Research output: Contribution to journalArticle

rhodamine B
Polymethyl Methacrylate
display devices
Sols
rhodamine
9 Citations (Scopus)

Gas barrier characteristics of a polysilazane film formed on an ITO-coated PET substrate

Ohishi, T., 2003 Nov 15, In : Journal of Non-Crystalline Solids. 330, 1-3, p. 248-251 4 p.

Research output: Contribution to journalArticle

Tin oxides
indium oxides
Indium
tin oxides
Gases