• 423 Citations
  • 12 h-Index
1984 …2019

Research output per year

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Research Output

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2019

Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

Nabatame, T., Yamamoto, I., Sawada, T., Ohi, A., Dao, T. D., Ohishi, T. & Nagao, T., 2019 Jan 1, Atomic Layer Deposition Applications 15. Roozeboom, F., De Gendt, S., Dendooven, J., Elam, J. W., van der Straten, O., Liu, C., Sundaram, G. & Illiberi, A. (eds.). 3 ed. Electrochemical Society Inc., p. 15-21 7 p. (ECS Transactions; vol. 92, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y. & Ohishi, T., 2019 Mar, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 368-370 3 p. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., Ohi, A., Yamamoto, I., Ohishi, T., Chikyow, T. & Ogura, A., 2016 Jan 1, Thin Film Transistors 13, TFT 13. Kuo, Y. (ed.). 10 ed. Electrochemical Society Inc., p. 149-156 8 p. (ECS Transactions; vol. 75, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2012

Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 Nov 19, Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. p. 49-59 11 p. (ECS Transactions; vol. 45, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2007

What is the essence of vFB shifts in high-k gate stack?

Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T. & Toriumi, A., 2007 Dec 1, ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 ed. p. 543-555 13 p. (ECS Transactions; vol. 11, no. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)