• 399 Citations
  • 12 h-Index
1984 …2019
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Research Output 1984 2019

  • 399 Citations
  • 12 h-Index
  • 69 Article
  • 5 Conference contribution
  • 1 Chapter
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Conference contribution
2019

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y. & Ohishi, T., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 368-370 3 p. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Annealing
annealing
Interface states
Capacitors
capacitors
2016
2 Citations (Scopus)

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., Ohi, A., Yamamoto, I., Ohishi, T., Chikyow, T. & Ogura, A., 2016, Thin Film Transistors 13, TFT 13. 10 ed. Electrochemical Society Inc., Vol. 75. p. 149-156 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Indium
Tungsten
Carbon
Oxides
2012

Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012, ECS Transactions. 3 ed. Vol. 45. p. 49-59 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Annealing
Electrodes
Metals
MOS capacitors
Atoms
2011
2 Citations (Scopus)

Preparation and properties of sol-gel thin film containing quinacridone latent pigment by using laser irradiation

Ohishi, T. & Ishitsuka, H., 2011, IOP Conference Series: Materials Science and Engineering. SYMPOSIUM 2A ed. Institute of Physics Publishing, Vol. 18. 032010

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser beam effects
Pigments
Sol-gels
Thin films
Transparency
2007
11 Citations (Scopus)

What is the essence of vFB shifts in high-k gate stack?

Nabatame, T., Iwamoto, K., Akiyama, K., Nunoshige, Y., Ota, H., Ohishi, T. & Toriumi, A., 2007, ECS Transactions. 4 ed. Vol. 11. p. 543-555 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxygen vacancies
Oxidation
Metals
High-k dielectric