• 427 Citations
  • 12 h-Index
1984 …2019

Research output per year

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Article
2019

Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Sang, L., Koide, Y. & Ohishi, T., 2019 Jan 31, In : Semiconductor Science and Technology. 34, 3, 034001.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Direct writing of copper micropatterns using near-infrared femtosecond laser-pulse-induced reduction of glyoxylic acid copper complex

Mizoshiri, M., Aoyama, K., Uetsuki, A. & Ohishi, T., 2019 Jun 1, In : Micromachines. 10, 6, 401.

Research output: Contribution to journalArticle

Open Access
2 Citations (Scopus)

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., Ikeda, N., Ohishi, T. & Ohi, A., 2019 Jan 1, In : Applied Physics Express. 12, 1, 011009.

Research output: Contribution to journalArticle

9 Citations (Scopus)
2017

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Sawada, T., Nabatame, T., Dao, T. D., Yamamoto, I., Kurishima, K., Onaya, T., Ohi, A., Ito, K., Takahashi, M., Kohama, K., Ohishi, T., Ogura, A. & Nagao, T., 2017 Nov 1, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35, 6, 061503.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2016

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Taweesup, K., Yamamoto, I., Chikyow, T., Lothongkum, G., Tsukagoshi, K., Ohishi, T., Tungasmita, S., Visuttipitukul, P., Ito, K., Takahashi, M. & Nabatame, T., 2016 Jan 1, In : Thin Solid Films. 598, p. 126-130 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2015

Fabrication of copper wire using glyoxylic acid copper complex and laser irradiation in air

Ohishi, T. & Kimura, R., 2015, In : Scientific Reports. 6, p. 799-808

Research output: Contribution to journalArticle

2014

Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature

Nabatame, T., Ohi, A., Chikyo, T., Kimura, M., Yamada, H. & Ohishi, T., 2014 May, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32, 3, 03D121.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Preparation and gas barrier characteristics of polysilazane-derived silica thin films using ultraviolet irradiation

Ohishi, T., Sone, S. & Yanagida, K., 2014, In : Scientific Reports. 5, p. 105-111 7 p.

Research output: Contribution to journalArticle

2012

Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T. & Chikyow, T., 2012 Feb 1, In : Thin Solid Films. 520, 8, p. 3387-3391 5 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2012 May 6, In : 221st Electro Chemical Society Meeting, Seattle (USA).

Research output: Contribution to journalArticle

2011

Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, H. Y., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 May 25, In : 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).

Research output: Contribution to journalArticle

Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura, M. K., T.Nabatame, T. N., H.Yamada, H. Y., A.Ohi, A. O., T.Chikyow, T. C., T.Ohishi, T. O. & Oishi, T., 2011 Nov 4, In : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

Research output: Contribution to journalArticle

The effect of redox annealing on flatband voltage in ITO/HfO2 MOS capacitors

H.Yamada, H. Y., T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C. & Oishi, T., 2011 Nov 4, In : NIMS(物質材料研究機構)連携大学院ワークショップ、早稲田大.

Research output: Contribution to journalArticle

2009

Micro-pattering of siloxane films by proton beam writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 Oct 26, In : Journal of Photopolymer Science and Technology. 22, 2, p. 239-243 5 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Micro-patterning of Siloxane Films by Proton Beam Writing

Nishikawa, H., Tsuchiya, R., Yasukawa, T., Kaneko, T., Furuta, Y. & Ohishi, T., 2009 Jun 1, In : Journal of Photopolymer Science and Technology, Vol.22, pp.239-243(2009). 22, p. 239-243

Research output: Contribution to journalArticle

2008

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame, T. N., Y.Nunoshige, Y. N., M.Kadoshima, M. K., H.Takaba, H. T., K.Segawa, K. S., S.Kimura, S. K., H.Satake, H. S., H.Ota, H. O., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 28, In : Microelectronics Engineering.

Research output: Contribution to journalArticle

Changes in effective work function of HfxRu1-x alloy gate electrode

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., Satake, H., Ota, H., Ohishi, T. & Toriumi, A., 2008 Jul 1, In : Microelectronic Engineering. 85, 7, p. 1524-1528 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Effect of ultrasound sonication on electroplating of iridium

Ohsaka, T., Isaka, M., Hirano, K. & Ohishi, T., 2008 Apr, In : Ultrasonics Sonochemistry. 15, 4, p. 283-288 6 p.

Research output: Contribution to journalArticle

31 Citations (Scopus)

Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ohta, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 23, In : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

Research output: Contribution to journalArticle

Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ota, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2008 Mar 24, In : 2008 Materials Research Society Spring Meeting (San Francisco,USA).

Research output: Contribution to journalArticle

2007

Effect of alcohol addition on electroplating of iridium

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 Sep 1, In : Transactions of the Institute of Metal Finishing. 85, 5, p. 260-264 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Effect of alcol addition on electroplating of Irudium

T.Ohsaka, T. O., Y.Matsubara, Y. M., K.Hirano, K. H., T.Ohishi, T. O. & Oishi, T., 2007 Sep 28, In : 58th Annual Meeting of the International Society of Electrochemistry (Canada).

Research output: Contribution to journalArticle

Electroplating of iridium - Cobalt alloy

Ohsaka, T., Matsubara, Y., Hirano, K. & Ohishi, T., 2007 Sep 1, In : Transactions of the Institute of Metal Finishing. 85, 5, p. 265-269 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Electroplating of Iridium-Cobalt Alloy

Ohsaka, T., Matsubara, Y., Hirano, K., Ohshi, T. & Oishi, T., 2007 Nov 1, In : Transactions of the Institute of Metal Finishing. 85, p. 265

Research output: Contribution to journalArticle

7 Citations (Scopus)

Role of oxygene vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Nunoshige, Y., Nabatame, T., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Nov 12, In : the 5th International Symposium on Control of Semiconductor Interfaces (Tokyo,Japan).

Research output: Contribution to journalArticle

Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige, Y. N., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Nov 12, In : Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces.

Research output: Contribution to journalArticle

What is the essence of Vfb shifts in high-k gate stack?

T.Nabatame, T. N., K.Iwamoto, K. I., K.Akiyama, K. A., Y.Nunoshige, Y. N., H.Nunoshige, H. N., H.Ota, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2007 Oct 7, In : Electrochemical Society (ECS) Transactions. 11, p. 543

Research output: Contribution to journalArticle

11 Citations (Scopus)
2006

Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura, S. K., K.Iwamoto, K. I., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O. & Oishi, T., 2006 Nov 8, In : 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.

Research output: Contribution to journalArticle

The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Takaba, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., T.Ohishi, T. O., A.Toriumi, A. T. & Oishi, T., 2006 Dec 17, In : Materials Science in Semiconductor Orocessing. 9, p. 975-979

Research output: Contribution to journalArticle

12 Citations (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

T.Nabatame, T. N., K.Segawa, K. S., M.Kadoshima, M. K., H.Tanabe, H. T., K.Iwamoto, K. I., S.Kimura, S. K., Y.Nunoshige, Y. N., H.Satake, H. S., A.Toriumi, A. T., Ohishi, T. & Oishi, T., 2006 Jun 10, In : 2006 European Materials Research Society Spring Meeting (Nice,France).

Research output: Contribution to journalArticle

12 Citations (Scopus)

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

Nabatame, T., Segawa, K., Kadoshima, M., Takaba, H., Iwamoto, K., Kimura, S., Nunoshige, Y., Satake, H., Ohishi, T. & Toriumi, A., 2006 Dec 1, In : Materials Science in Semiconductor Processing. 9, 6, p. 975-979 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata, H. T., K.Segawa, K. S., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Satake, H. S., T.Ohishi, T. O., A.Toroumi, A. T. & Oishi, T., 2006 Jul 25, In : 6th International Coference on Atomic Layer Deposition (Seoul, Korea).

Research output: Contribution to journalArticle

2005

Chemical Processing of Ceramics

T.Ohishi, T. O. & Oishi, T., 2005 May 1, In : CRC PRESS.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Chemical Processing of Ceramics,Second Edition

Lee, B. I., J.K.Pope, J. K. P. & Oishi, T., 2005 Mar 25, In : Chemical Processing of Ceramics.

Research output: Contribution to journalArticle

2004
4 Citations (Scopus)
2003

An ethoxy-silano rhodamine B derivative and its application to surface coatings on display devices

Ohishi, T., 2003 Dec 15, In : Journal of Non-Crystalline Solids. 332, 1-3, p. 80-86 7 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Gas barrier characteristics of a polysilazane film formed on an ITO-coated PET substrate

Ohishi, T., 2003 Nov 15, In : Journal of Non-Crystalline Solids. 330, 1-3, p. 248-251 4 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)
7 Citations (Scopus)

The effect of photo-irradiation in hydrolysis and condensation of silicon alkoxide

Okusaki, S. & Ohishi, T., 2003 May 15, In : Journal of Non-Crystalline Solids. 319, 3, p. 311-313 3 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)
2000

Photoluminescence behavior of SiO2 prepared by sol-gel processing

Okuzaki, S., Okude, K. & Ohishi, T., 2000 Mar 2, In : Journal of Non-Crystalline Solids. 265, 1, p. 61-67 7 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)