Abstract
This paper reports on an approach to fabricate c-axis-oriented PZT-based monocrystalline thin film with high insulation property on Si. We found that the insulation property of the PZT-based monocrystalline thin film on a buffer layer prepared via pulsed laser deposition (PLD) were relatably low. The particle-shaped debris generated in PLD perhaps led to this worse insulation property. It was also found that the insulation property can be improved by additional PZT deposition via a sol-gel process, while the c-axis orientation was decreased. Eventually, the PZT thin film on a buffer layer prepared via sputter deposition exhibited higher insulation property comparable with those of general PZT thin films. This study successfully gives a great knowledge for obtaining the electrically-reliable PZT-based monocrystalline thin film on Si.
Translated title of the contribution | Fabrication of c-Axis-oriented PZT-based monocrystalline thin film with high insulation property on Si substrate |
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Original language | Japanese |
Pages (from-to) | 137-143 |
Number of pages | 7 |
Journal | IEEJ Transactions on Sensors and Micromachines |
Volume | 140 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2020 Jun 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering