0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

Masami Tokumitsu; Kazumi Nishimura; Makoto Hirano; Kimiyoshi Yamasaki

0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamasaki

Research output: Contribution to journal › Article › peer-review

Abstract

A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.

Original language	English
Pages (from-to)	1189-1194
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E78-C
Issue number	9
Publication status	Published - 1995 Sep 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications",

abstract = "A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.",

author = "Masami Tokumitsu and Kazumi Nishimura and Makoto Hirano and Kimiyoshi Yamasaki",

year = "1995",

month = sep,

day = "1",

language = "English",

volume = "E78-C",

pages = "1189--1194",

journal = "IEICE Transactions on Electronics",

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publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

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TY - JOUR

T1 - 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

AU - Tokumitsu, Masami

AU - Nishimura, Kazumi

AU - Hirano, Makoto

AU - Yamasaki, Kimiyoshi

PY - 1995/9/1

Y1 - 1995/9/1

N2 - A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.

AB - A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029369370&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029369370

VL - E78-C

SP - 1189

EP - 1194

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 9

ER -

0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

Abstract

ASJC Scopus subject areas

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