0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamasaki

Research output: Contribution to journalArticle

  • 4 Citations

Abstract

A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.

LanguageEnglish
Pages1189-1194
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE78-C
Issue number9
StatePublished - 1995 Sep
Externally publishedYes

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Cutoff frequency
Bandwidth
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tokumitsu, M., Nishimura, K., Hirano, M., & Yamasaki, K. (1995). 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. IEICE Transactions on Electronics, E78-C(9), 1189-1194.

0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. / Tokumitsu, Masami; Nishimura, Kazumi; Hirano, Makoto; Yamasaki, Kimiyoshi.

In: IEICE Transactions on Electronics, Vol. E78-C, No. 9, 09.1995, p. 1189-1194.

Research output: Contribution to journalArticle

Tokumitsu, M, Nishimura, K, Hirano, M & Yamasaki, K 1995, '0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications' IEICE Transactions on Electronics, vol. E78-C, no. 9, pp. 1189-1194.
Tokumitsu M, Nishimura K, Hirano M, Yamasaki K. 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. IEICE Transactions on Electronics. 1995 Sep;E78-C(9):1189-1194.
Tokumitsu, Masami ; Nishimura, Kazumi ; Hirano, Makoto ; Yamasaki, Kimiyoshi. / 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. In: IEICE Transactions on Electronics. 1995 ; Vol. E78-C, No. 9. pp. 1189-1194
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