Abstract
A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
| Original language | English |
|---|---|
| Pages (from-to) | 1189-1194 |
| Number of pages | 6 |
| Journal | IEICE Transactions on Electronics |
| Volume | E78-C |
| Issue number | 9 |
| Publication status | Published - 1995 Sep 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of '0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications'. Together they form a unique fingerprint.
Cite this
Tokumitsu, M., Nishimura, K., Hirano, M., & Yamasaki, K. (1995). 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. IEICE Transactions on Electronics, E78-C(9), 1189-1194.