0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamasaki

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    4 Citations (Scopus)

    Abstract

    A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.

    Original languageEnglish
    Pages (from-to)1189-1194
    Number of pages6
    JournalIEICE Transactions on Electronics
    VolumeE78-C
    Issue number9
    Publication statusPublished - 1995 Sep 1

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Tokumitsu, M., Nishimura, K., Hirano, M., & Yamasaki, K. (1995). 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. IEICE Transactions on Electronics, E78-C(9), 1189-1194.