Abstract
A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
Original language | English |
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Pages (from-to) | 1189-1194 |
Number of pages | 6 |
Journal | IEICE Transactions on Electronics |
Volume | E78-C |
Issue number | 9 |
Publication status | Published - 1995 Sep 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering