Abstract
A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
| Original language | English |
|---|---|
| Pages (from-to) | 1189-1194 |
| Number of pages | 6 |
| Journal | IEICE Transactions on Electronics |
| Volume | E78-C |
| Issue number | 9 |
| Publication status | Published - 1995 Sep |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications. / Tokumitsu, Masami; Nishimura, Kazumi; Hirano, Makoto; Yamasaki, Kimiyoshi.
In: IEICE Transactions on Electronics, Vol. E78-C, No. 9, 09.1995, p. 1189-1194.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 0.1 μm Au/WSiN gate GaAs MESFET with new BP-LDD structure and its applications
AU - Tokumitsu, Masami
AU - Nishimura, Kazumi
AU - Hirano, Makoto
AU - Yamasaki, Kimiyoshi
PY - 1995/9
Y1 - 1995/9
N2 - A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
AB - A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
UR - http://www.scopus.com/inward/record.url?scp=0029369370&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029369370&partnerID=8YFLogxK
M3 - Article
VL - E78-C
SP - 1189
EP - 1194
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 9
ER -