0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs

Sh Wada, J. Yamazaki, M. Ishikawa, T. Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 4 Citations

Abstract

This paper describes on a novel double-deck-shaped (DDS) gate technology for 0.1-μm heterojunction-FETs (HJFETs) that have half the external gate fringing capacitance (Cfext) of conventional T-shaped gate HJFETs. By introducing a T-shaped SiO2-opening technique based on two-step dry-etching with W-film masks, we have fabricated 0.1-μm DDS gate-openings adapted to the reduction in Cfext and to the voidless-filling of gate-metals. Moreover, by using WSi-collimated sputtering and electroless Au-plating, 0.1-μm DDS WSi/Ti/Pt/Au gate HJFETs with high uniformity and reproducibility are made. Fabricated n-Al0.2Ga0.8As/In0.15Ga0.75As HJFETs exhibit an excellent Vth standard-deviation (σVth) of 39 mV. Also, the HJFET covered with a SiO2 film shows a very high millimeter-wave performance with fT of 120 GHz and fmax of 165 GHz, due to the low Cfext. In addition, a high fT of 151 GHz and fmax of 186 GHz are obtained without a SiO2 film.

LanguageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherIEEE
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Anaheim, CA, USA
Duration: 1997 Oct 121997 Oct 15

Other

OtherProceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityAnaheim, CA, USA
Period97/10/1297/10/15

Fingerprint

Field effect transistors
Heterojunctions
Capacitance
Dry etching
Electroless plating
Millimeter waves
Sputtering
Masks
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wada, S., Yamazaki, J., Ishikawa, M., & Maeda, T. (1997). 0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) IEEE.

0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs. / Wada, Sh; Yamazaki, J.; Ishikawa, M.; Maeda, T.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1997.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wada, S, Yamazaki, J, Ishikawa, M & Maeda, T 1997, 0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, Proceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Anaheim, CA, USA, 97/10/12.
Wada S, Yamazaki J, Ishikawa M, Maeda T. 0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE. 1997.
Wada, Sh ; Yamazaki, J. ; Ishikawa, M. ; Maeda, T./ 0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1997.
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abstract = "This paper describes on a novel double-deck-shaped (DDS) gate technology for 0.1-μm heterojunction-FETs (HJFETs) that have half the external gate fringing capacitance (Cfext) of conventional T-shaped gate HJFETs. By introducing a T-shaped SiO2-opening technique based on two-step dry-etching with W-film masks, we have fabricated 0.1-μm DDS gate-openings adapted to the reduction in Cfext and to the voidless-filling of gate-metals. Moreover, by using WSi-collimated sputtering and electroless Au-plating, 0.1-μm DDS WSi/Ti/Pt/Au gate HJFETs with high uniformity and reproducibility are made. Fabricated n-Al0.2Ga0.8As/In0.15Ga0.75As HJFETs exhibit an excellent Vth standard-deviation (σVth) of 39 mV. Also, the HJFET covered with a SiO2 film shows a very high millimeter-wave performance with fT of 120 GHz and fmax of 165 GHz, due to the low Cfext. In addition, a high fT of 151 GHz and fmax of 186 GHz are obtained without a SiO2 film.",
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