0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Masami Tokumitsu, Makoto Hirano, Koichi Murata, Yuhki Imai, Kimiyoshi Yamasaki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)

    Abstract

    A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

    Original languageEnglish
    Title of host publicationIEEE MTT-S International Microwave Symposium Digest
    PublisherPubl by IEEE
    Pages1629-1632
    Number of pages4
    ISBN (Print)0780317793
    Publication statusPublished - 1994 Jan 1
    EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
    Duration: 1994 May 231994 May 27

    Publication series

    NameIEEE MTT-S International Microwave Symposium Digest
    Volume3
    ISSN (Print)0149-645X

    Other

    OtherProceedings of the IEEE MTT-S International Microwave Symposium
    CitySan Diego, CA, USA
    Period94/5/2394/5/27

    ASJC Scopus subject areas

    • Radiation
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of '0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs'. Together they form a unique fingerprint.

  • Cite this

    Tokumitsu, M., Hirano, M., Murata, K., Imai, Y., & Yamasaki, K. (1994). 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. In IEEE MTT-S International Microwave Symposium Digest (pp. 1629-1632). (IEEE MTT-S International Microwave Symposium Digest; Vol. 3). Publ by IEEE.