0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Masami Tokumitsu, Makoto Hirano, Koichi Murata, Yuhki Imai, Kimiyoshi Yamasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages1629-1632
Number of pages4
Volume3
ISBN (Print)0780317793
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Duration: 1994 May 231994 May 27

Other

OtherProceedings of the IEEE MTT-S International Microwave Symposium
CitySan Diego, CA, USA
Period94/5/2394/5/27

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Tokumitsu, M., Hirano, M., Murata, K., Imai, Y., & Yamasaki, K. (1994). 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. In IEEE MTT-S International Microwave Symposium Digest (Vol. 3, pp. 1629-1632). Piscataway, NJ, United States: Publ by IEEE.