0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs

Masami Tokumitsu, Makoto Hirano, Koichi Murata, Yuhki Imai, Kimiyoshi Yamasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 9 Citations

Abstract

A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.

LanguageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages1629-1632
Number of pages4
Volume3
ISBN (Print)0780317793
StatePublished - 1994
Externally publishedYes
EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Duration: 1994 May 231994 May 27

Other

OtherProceedings of the IEEE MTT-S International Microwave Symposium
CitySan Diego, CA, USA
Period94/5/2394/5/27

Fingerprint

frequency dividers
Cutoff frequency
cut-off
field effect transistors
amplifiers
high speed
analogs
bandwidth
Bandwidth
Analog integrated circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Tokumitsu, M., Hirano, M., Murata, K., Imai, Y., & Yamasaki, K. (1994). 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. In IEEE MTT-S International Microwave Symposium Digest (Vol. 3, pp. 1629-1632). Piscataway, NJ, United States: Publ by IEEE.

0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. / Tokumitsu, Masami; Hirano, Makoto; Murata, Koichi; Imai, Yuhki; Yamasaki, Kimiyoshi.

IEEE MTT-S International Microwave Symposium Digest. Vol. 3 Piscataway, NJ, United States : Publ by IEEE, 1994. p. 1629-1632.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tokumitsu, M, Hirano, M, Murata, K, Imai, Y & Yamasaki, K 1994, 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. in IEEE MTT-S International Microwave Symposium Digest. vol. 3, Publ by IEEE, Piscataway, NJ, United States, pp. 1629-1632, Proceedings of the IEEE MTT-S International Microwave Symposium, San Diego, CA, USA, 94/5/23.
Tokumitsu M, Hirano M, Murata K, Imai Y, Yamasaki K. 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. In IEEE MTT-S International Microwave Symposium Digest. Vol. 3. Piscataway, NJ, United States: Publ by IEEE. 1994. p. 1629-1632.
Tokumitsu, Masami ; Hirano, Makoto ; Murata, Koichi ; Imai, Yuhki ; Yamasaki, Kimiyoshi. / 0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs. IEEE MTT-S International Microwave Symposium Digest. Vol. 3 Piscataway, NJ, United States : Publ by IEEE, 1994. pp. 1629-1632
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