0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth

Shigeki Wada, Naoki Furuhata, Masatoshi Tokushima, Muneo Fukaishi, Hikaru Hida, Tadashi Maeda

Research output: ResearchConference contribution

Abstract

This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.

LanguageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages197-200
Number of pages4
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

Other

OtherProceedings of the 1995 International Electron Devices Meeting, IEDM'95
CityWashington, DC, USA
Period95/12/1095/12/13

Fingerprint

Dry etching
Field effect transistors
Heterojunctions
Aspect ratio
Capacitance
Microwaves
Fabrication
Electrodes
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wada, S., Furuhata, N., Tokushima, M., Fukaishi, M., Hida, H., & Maeda, T. (1995). 0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth. In Technical Digest - International Electron Devices Meeting (pp. 197-200). IEEE.

0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth. / Wada, Shigeki; Furuhata, Naoki; Tokushima, Masatoshi; Fukaishi, Muneo; Hida, Hikaru; Maeda, Tadashi.

Technical Digest - International Electron Devices Meeting. IEEE, 1995. p. 197-200.

Research output: ResearchConference contribution

Wada, S, Furuhata, N, Tokushima, M, Fukaishi, M, Hida, H & Maeda, T 1995, 0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 197-200, Proceedings of the 1995 International Electron Devices Meeting, IEDM'95, Washington, DC, USA, 95/12/10.
Wada S, Furuhata N, Tokushima M, Fukaishi M, Hida H, Maeda T. 0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth. In Technical Digest - International Electron Devices Meeting. IEEE. 1995. p. 197-200.
Wada, Shigeki ; Furuhata, Naoki ; Tokushima, Masatoshi ; Fukaishi, Muneo ; Hida, Hikaru ; Maeda, Tadashi. / 0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth. Technical Digest - International Electron Devices Meeting. IEEE, 1995. pp. 197-200
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abstract = "This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.",
author = "Shigeki Wada and Naoki Furuhata and Masatoshi Tokushima and Muneo Fukaishi and Hikaru Hida and Tadashi Maeda",
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AU - Wada,Shigeki

AU - Furuhata,Naoki

AU - Tokushima,Masatoshi

AU - Fukaishi,Muneo

AU - Hida,Hikaru

AU - Maeda,Tadashi

PY - 1995

Y1 - 1995

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AB - This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.

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