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0.1-μm p+-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques
Shigeki Wada, Naoki Furuhata, Masatoshi Tokushima, Muneo Fukaishi, Hikaru Hida, Tadashi Maeda
Research output: Contribution to journal › Article › peer-review
2
Citations
(Scopus)