0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth

Shigeki Wada, Naoki Furuhata, Masatoshi Tokushima, Muneo Fukaishi, Hikaru Hida, Tadashi Maeda

Research output: Contribution to journalConference article

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Abstract

This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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