0.2-μm Fully-Self-Aligned Y-Shaped Gate HJFET's with Reduced Gate-Fringing Capacitance Fabricated Using Collimated Sputtering and Electroless Au-Plating

Shigeki Wada, Masatoshi Tokushima, Muneo Fukaishi, Noriaki Matsuno, Hitoshi Yano, Hikaru Hida, Tadashi Maeda

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Engineering & Materials Science

Chemical Compounds