0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H H, Kasamoto Kasamoto, K.Ueno K.Ueno, H.Gomi H.Gomi, Kazuyoshi Ueno

Research output: Contribution to journalArticle

LanguageEnglish
Pages1440-1444
JournalJapanese Journal of Applied Physics
Volume37
StatePublished - 1998 Mar 1

Cite this

T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H, H., Kasamoto, K., ... Ueno, K. (1998). 0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF. Japanese Journal of Applied Physics, 37, 1440-1444.

0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF. / T.Yokoyama, T.Yokoyama; Y.Yamada, Y.Yamada; K.Kishimoto, K.Kishimoto; T.Usami, T.Usami; H, H; Kasamoto, Kasamoto; K.Ueno, K.Ueno; H.Gomi, H.Gomi; Ueno, Kazuyoshi.

In: Japanese Journal of Applied Physics, Vol. 37, 01.03.1998, p. 1440-1444.

Research output: Contribution to journalArticle

T.Yokoyama, TY, Y.Yamada, YY, K.Kishimoto, KK, T.Usami, TU, H, H, Kasamoto, K, K.Ueno, KU, H.Gomi, HG & Ueno, K 1998, '0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF' Japanese Journal of Applied Physics, vol 37, pp. 1440-1444.
T.Yokoyama TY, Y.Yamada YY, K.Kishimoto KK, T.Usami TU, H H, Kasamoto K et al. 0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF. Japanese Journal of Applied Physics. 1998 Mar 1;37:1440-1444.
T.Yokoyama, T.Yokoyama ; Y.Yamada, Y.Yamada ; K.Kishimoto, K.Kishimoto ; T.Usami, T.Usami ; H, H ; Kasamoto, Kasamoto ; K.Ueno, K.Ueno ; H.Gomi, H.Gomi ; Ueno, Kazuyoshi. / 0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF. In: Japanese Journal of Applied Physics. 1998 ; Vol. 37. pp. 1440-1444
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