0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H H, Kasamoto Kasamoto, K.Ueno K.Ueno, H.Gomi H.Gomi, Kazuyoshi Ueno

Research output: Contribution to journalArticle

26 Citations (Scopus)
Original languageEnglish
Pages (from-to)1440-1444
JournalJapanese Journal of Applied Physics
Volume37
Publication statusPublished - 1998 Mar 1

Cite this

T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H, H., Kasamoto, K., K.Ueno, K. U., H.Gomi, H. G., & Ueno, K. (1998). 0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF. Japanese Journal of Applied Physics, 37, 1440-1444.