0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H H, Kasamoto Kasamoto, K.Ueno K.Ueno, H.Gomi H.Gomi, Kazuyoshi Ueno

Research output: Contribution to journalArticle

25 Citations (Scopus)
Original languageEnglish
Pages (from-to)1440-1444
JournalJapanese Journal of Applied Physics
Volume37
Publication statusPublished - 1998 Mar 1

Cite this

T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H, H., Kasamoto, K., ... Ueno, K. (1998). 0.7μm pitch double level Al interconnection technology for DRAMs using SiO2 mask Al etching and PECVD SiOF. Japanese Journal of Applied Physics, 37, 1440-1444.