-1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits

Masahiro Sasaki, Makoto Ikeda, Kunihiro Asada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper proposes quite accurate four-transistor temperature sensor designed and developed for thermal testing and monitoring of VLSI circuits. The sensor is featured with an extremely small area of 11.6×4.1 μm 2 and low power consumption of about 25 μW. The performance of the sensor is highly linear and the predicted temperature error is merely -1.0-+0.8°C using two-point calibration within the range of 50 - 125°C. The sensor is implemented in ASPLA CMOS 90nm 1P6M process, operated at supply voltage of IV, and tested successfully.

Original languageEnglish
Title of host publicationIEEE International Conference on Microelectronic Test Structures
Pages9-12
Number of pages4
Volume2006
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Conference on Microelectronic Test Structures - Austin, TX
Duration: 2006 Mar 62006 Mar 9

Other

Other2006 International Conference on Microelectronic Test Structures
CityAustin, TX
Period06/3/606/3/9

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sasaki, M., Ikeda, M., & Asada, K. (2006). -1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits. In IEEE International Conference on Microelectronic Test Structures (Vol. 2006, pp. 9-12). [1614264] https://doi.org/10.1109/ICMTS.2006.1614264