-1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits

Masahiro Sasaki, Makoto Ikeda, Kunihiro Asada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper proposes quite accurate four-transistor temperature sensor designed and developed for thermal testing and monitoring of VLSI circuits. The sensor is featured with an extremely small area of 11.6×4.1 μm 2 and low power consumption of about 25 μW. The performance of the sensor is highly linear and the predicted temperature error is merely -1.0-+0.8°C using two-point calibration within the range of 50 - 125°C. The sensor is implemented in ASPLA CMOS 90nm 1P6M process, operated at supply voltage of IV, and tested successfully.

Original languageEnglish
Title of host publication2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers
Pages9-12
Number of pages4
DOIs
Publication statusPublished - 2006 Oct 13
Event2006 International Conference on Microelectronic Test Structures - Austin, TX, United States
Duration: 2006 Mar 62006 Mar 9

Publication series

NameIEEE International Conference on Microelectronic Test Structures
Volume2006

Conference

Conference2006 International Conference on Microelectronic Test Structures
CountryUnited States
CityAustin, TX
Period06/3/606/3/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Sasaki, M., Ikeda, M., & Asada, K. (2006). -1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits. In 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers (pp. 9-12). [1614264] (IEEE International Conference on Microelectronic Test Structures; Vol. 2006). https://doi.org/10.1109/ICMTS.2006.1614264