11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

    Research output: Contribution to conferencePaper

    Abstract

    A high-speed potential of an n** plus -Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1. 0 mu m gate-length MISFET's. The delay time was 42. 4ps with a power dissipation of 8. 9mw/gate. A maximum toggle frequency of 11. 3GHz with a power dissipation of 219mw per T-F/F has been achieved at room temperature.

    Original languageEnglish
    Pages221-223
    Number of pages3
    Publication statusPublished - 1987 Apr 1
    EventPap from the 1987 Natl Conv IEICE - Tokyo, Jpn
    Duration: 1987 Mar 261987 Mar 29

    Other

    OtherPap from the 1987 Natl Conv IEICE
    CityTokyo, Jpn
    Period87/3/2687/3/29

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Fujita, S., Hirano, M., Maezawa, K., & Mizutani, T. (1987). 11. 3 GHz FREQUENCY DIVIDER EMPLOYING AlGaAs/GaAs MISFET'S.. 221-223. Paper presented at Pap from the 1987 Natl Conv IEICE, Tokyo, Jpn, .