Abstract
A 120Gb/s multiplexer and a 110Gb/s demultiplexer are implemented in an InP HBT process. They feature a direct drive series-gating configuration selector, an asymmetrical latch flip-flop, and broadband impedance matching with inverted micro-strip lines. Their input sensitivity is less than 100mVpp, and the output swing is more than 400mVpp.
Original language | English |
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Pages (from-to) | 182-183+518 |
Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
Volume | 47 |
Publication status | Published - 2003 Dec 1 |
Externally published | Yes |
Event | Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement - San Francisco, CA., United States Duration: 2003 Feb 15 → 2003 Feb 19 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering