TY - GEN
T1 - 1/4 miniaturized passive elements for GaAs MMICs
AU - Hirano, Makoto
AU - Imai, Yuhki
AU - Asai, Kazuyoshi
PY - 1992/1/1
Y1 - 1992/1/1
N2 - Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.
AB - Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.
UR - http://www.scopus.com/inward/record.url?scp=0026765535&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026765535&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0026765535
SN - 078030196X
T3 - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
SP - 37
EP - 40
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PB - Publ by IEEE
T2 - 13th Annual GaAs IC Symposium Technical Digest
Y2 - 20 October 1991 through 23 October 1991
ER -