1/4 miniaturized passive elements for GaAs MMICs

Makoto Hirano, Yuhki Imai, Kazuyoshi Asai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.

    Original languageEnglish
    Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
    Place of PublicationPiscataway, NJ, United States
    PublisherPubl by IEEE
    Pages37-40
    Number of pages4
    ISBN (Print)078030196X
    Publication statusPublished - 1992 Jan
    Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
    Duration: 1991 Oct 201991 Oct 23

    Other

    Other13th Annual GaAs IC Symposium Technical Digest
    CityMonterey, CA, USA
    Period91/10/2091/10/23

    Fingerprint

    Monolithic microwave integrated circuits
    Capacitors
    Monolayers
    Wire
    Electrodes
    Substrates
    Metals

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Hirano, M., Imai, Y., & Asai, K. (1992). 1/4 miniaturized passive elements for GaAs MMICs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 37-40). Piscataway, NJ, United States: Publ by IEEE.

    1/4 miniaturized passive elements for GaAs MMICs. / Hirano, Makoto; Imai, Yuhki; Asai, Kazuyoshi.

    Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States : Publ by IEEE, 1992. p. 37-40.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Hirano, M, Imai, Y & Asai, K 1992, 1/4 miniaturized passive elements for GaAs MMICs. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, Piscataway, NJ, United States, pp. 37-40, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 91/10/20.
    Hirano M, Imai Y, Asai K. 1/4 miniaturized passive elements for GaAs MMICs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States: Publ by IEEE. 1992. p. 37-40
    Hirano, Makoto ; Imai, Yuhki ; Asai, Kazuyoshi. / 1/4 miniaturized passive elements for GaAs MMICs. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States : Publ by IEEE, 1992. pp. 37-40
    @inproceedings{4543ed8dcaa74b489269588de81a5247,
    title = "1/4 miniaturized passive elements for GaAs MMICs",
    abstract = "Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.",
    author = "Makoto Hirano and Yuhki Imai and Kazuyoshi Asai",
    year = "1992",
    month = "1",
    language = "English",
    isbn = "078030196X",
    pages = "37--40",
    booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
    publisher = "Publ by IEEE",

    }

    TY - GEN

    T1 - 1/4 miniaturized passive elements for GaAs MMICs

    AU - Hirano, Makoto

    AU - Imai, Yuhki

    AU - Asai, Kazuyoshi

    PY - 1992/1

    Y1 - 1992/1

    N2 - Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.

    AB - Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.

    UR - http://www.scopus.com/inward/record.url?scp=0026765535&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0026765535&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0026765535

    SN - 078030196X

    SP - 37

    EP - 40

    BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

    PB - Publ by IEEE

    CY - Piscataway, NJ, United States

    ER -