1/4 miniaturized passive elements for GaAs MMICs

Makoto Hirano, Yuhki Imai, Kazuyoshi Asai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.

    Original languageEnglish
    Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
    PublisherPubl by IEEE
    Pages37-40
    Number of pages4
    ISBN (Print)078030196X
    Publication statusPublished - 1992 Jan 1
    Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
    Duration: 1991 Oct 201991 Oct 23

    Publication series

    NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

    Other

    Other13th Annual GaAs IC Symposium Technical Digest
    CityMonterey, CA, USA
    Period91/10/2091/10/23

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Hirano, M., Imai, Y., & Asai, K. (1992). 1/4 miniaturized passive elements for GaAs MMICs. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 37-40). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.