1um Bubble lon-Implant Devices with Two Level lon-Implated Layers Between Propagation Trachs

Masanori Shinohara, Fumiaki Hyuuga, Atsuro Kouzen, Makoto Hirano, Nobuyori Tsuzuki

    Research output: Contribution to journalArticle

    Original languageEnglish
    JournalIEEE Trans.on Magnetics
    VolumeMAG-21
    Publication statusPublished - 1985 Jan 1

    Cite this

    Shinohara, M., Hyuuga, F., Kouzen, A., Hirano, M., & Tsuzuki, N. (1985). 1um Bubble lon-Implant Devices with Two Level lon-Implated Layers Between Propagation Trachs. IEEE Trans.on Magnetics, MAG-21.

    1um Bubble lon-Implant Devices with Two Level lon-Implated Layers Between Propagation Trachs. / Shinohara, Masanori; Hyuuga, Fumiaki; Kouzen, Atsuro; Hirano, Makoto; Tsuzuki, Nobuyori.

    In: IEEE Trans.on Magnetics, Vol. MAG-21, 01.01.1985.

    Research output: Contribution to journalArticle

    Shinohara, M, Hyuuga, F, Kouzen, A, Hirano, M & Tsuzuki, N 1985, '1um Bubble lon-Implant Devices with Two Level lon-Implated Layers Between Propagation Trachs', IEEE Trans.on Magnetics, vol. MAG-21.
    Shinohara, Masanori ; Hyuuga, Fumiaki ; Kouzen, Atsuro ; Hirano, Makoto ; Tsuzuki, Nobuyori. / 1um Bubble lon-Implant Devices with Two Level lon-Implated Layers Between Propagation Trachs. In: IEEE Trans.on Magnetics. 1985 ; Vol. MAG-21.
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    AU - Shinohara, Masanori

    AU - Hyuuga, Fumiaki

    AU - Kouzen, Atsuro

    AU - Hirano, Makoto

    AU - Tsuzuki, Nobuyori

    PY - 1985/1/1

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