2-D simulation of kink-related sidegating effects in GaAs MESFETs

Kasuoki Usami, Kazushige Horio

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

Original languageEnglish
Pages (from-to)1737-1745
Number of pages9
JournalSolid-State Electronics
Volume39
Issue number12
DOIs
Publication statusPublished - 1996 Dec

Fingerprint

field effect transistors
planar structures
Substrates
simulation
Electron traps
Impact ionization
traps
ionization
gallium arsenide
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

2-D simulation of kink-related sidegating effects in GaAs MESFETs. / Usami, Kasuoki; Horio, Kazushige.

In: Solid-State Electronics, Vol. 39, No. 12, 12.1996, p. 1737-1745.

Research output: Contribution to journalArticle

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