2-D simulation of kink-related sidegating effects in GaAs MESFETs

Kasuoki Usami; Kazushige Horio

doi:10.1016/S0038-1101(96)00116-5

2-D simulation of kink-related sidegating effects in GaAs MESFETs

Kasuoki Usami, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

Original language	English
Pages (from-to)	1737-1745
Number of pages	9
Journal	Solid-State Electronics
Volume	39
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(96)00116-5
Publication status	Published - 1996 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(96)00116-5

Cite this

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title = "2-D simulation of kink-related sidegating effects in GaAs MESFETs",

abstract = "Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.",

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AU - Usami, Kasuoki

AU - Horio, Kazushige

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N2 - Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

AB - Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.

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2-D simulation of kink-related sidegating effects in GaAs MESFETs

Abstract

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