Sidegating (backgating) effects in a planar structure with sidegate on the same side as MESFET are studied by two-dimensional simulation and the results are compared with those for a structure with a backgate on the back side of the substrate. The kink-related sidegating is reproduced in the planar structure, too. Its mechanism is discussed and is attributed to the change of EL2's role from an electron trap to a recombination center by capturing holes, which are generated by impact ionization and flow into the semi-insulating substrate including EL2 (deep donor). The dependence of shallow acceptor density in the semi-insulating substrate is also studied. It is shown that the kink-related sidegating is less remarkable in the case with lower acceptor density in the substrate. Potential dependence of sidegating effects on the sidegate (backgate) position is also discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry