2-D simulations of trap-related drain-current transients in GaAs MESFETs and requirements for the substrate in MESFET-ICs

K.Horio K.Horio, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1-17
JournalReport of Research Laboratory of Engineering
Volume10
Publication statusPublished - 1996 Mar 1

Cite this

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title = "2-D simulations of trap-related drain-current transients in GaAs MESFETs and requirements for the substrate in MESFET-ICs",
author = "K.Horio K.Horio and Kazushige Horio",
year = "1996",
month = "3",
day = "1",
language = "English",
volume = "10",
pages = "1--17",
journal = "Report of Research Laboratory of Engineering",

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T1 - 2-D simulations of trap-related drain-current transients in GaAs MESFETs and requirements for the substrate in MESFET-ICs

AU - K.Horio, K.Horio

AU - Horio, Kazushige

PY - 1996/3/1

Y1 - 1996/3/1

M3 - Article

VL - 10

SP - 1

EP - 17

JO - Report of Research Laboratory of Engineering

JF - Report of Research Laboratory of Engineering

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