27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Shigeki Wada, Tadashi Maeda, Masatoshi Tokushima, Jin Yamazaki, Masaoki Ishikawa, Masahiro Fujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
PublisherIEEE
Pages125-128
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Atlanta, GA, USA
Duration: 1998 Nov 11998 Nov 4

Other

OtherProceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityAtlanta, GA, USA
Period98/11/198/11/4

Fingerprint

Electric power utilization
Field effect transistors
Dry etching
Cutoff frequency
Heterojunctions
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wada, S., Maeda, T., Tokushima, M., Yamazaki, J., Ishikawa, M., & Fujii, M. (1998). 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 125-128). IEEE.

27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. / Wada, Shigeki; Maeda, Tadashi; Tokushima, Masatoshi; Yamazaki, Jin; Ishikawa, Masaoki; Fujii, Masahiro.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). ed. / Anon. IEEE, 1998. p. 125-128.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wada, S, Maeda, T, Tokushima, M, Yamazaki, J, Ishikawa, M & Fujii, M 1998, 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. in Anon (ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, pp. 125-128, Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Atlanta, GA, USA, 98/11/1.
Wada S, Maeda T, Tokushima M, Yamazaki J, Ishikawa M, Fujii M. 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. In Anon, editor, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE. 1998. p. 125-128
Wada, Shigeki ; Maeda, Tadashi ; Tokushima, Masatoshi ; Yamazaki, Jin ; Ishikawa, Masaoki ; Fujii, Masahiro. / 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). editor / Anon. IEEE, 1998. pp. 125-128
@inproceedings{3ee803bc66b14d6ab81aca9e6725cda5,
title = "27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs",
abstract = "We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.",
author = "Shigeki Wada and Tadashi Maeda and Masatoshi Tokushima and Jin Yamazaki and Masaoki Ishikawa and Masahiro Fujii",
year = "1998",
language = "English",
pages = "125--128",
editor = "Anon",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "IEEE",

}

TY - GEN

T1 - 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

AU - Wada, Shigeki

AU - Maeda, Tadashi

AU - Tokushima, Masatoshi

AU - Yamazaki, Jin

AU - Ishikawa, Masaoki

AU - Fujii, Masahiro

PY - 1998

Y1 - 1998

N2 - We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

AB - We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

UR - http://www.scopus.com/inward/record.url?scp=0032309693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032309693&partnerID=8YFLogxK

M3 - Conference contribution

SP - 125

EP - 128

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

A2 - Anon, null

PB - IEEE

ER -