27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs

Shigeki Wada, Tadashi Maeda, Masatoshi Tokushima, Jin Yamazaki, Masaoki Ishikawa, Masahiro Fujii

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Abstract

We have developed 0.1-μm double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (fT) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

Original languageEnglish
Pages125-128
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Atlanta, GA, USA
Duration: 1998 Nov 11998 Nov 4

Other

OtherProceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityAtlanta, GA, USA
Period98/11/198/11/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wada, S., Maeda, T., Tokushima, M., Yamazaki, J., Ishikawa, M., & Fujii, M. (1998). 27 GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1-μm double-deck-shaped (DDS) gate E/D-HJFETs. 125-128. Paper presented at Proceedings of the 1998 20th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Atlanta, GA, USA, .