3-Dimensional elastic-plastic finite element analysis of stress-induced voiding in Cu damascene interconnects of ultra-large-scale integrated circuits

Takehiro Saitoh, Masaya Kawano, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Abstract

In order to discuss stress-induced voiding (SIV) of Cu damascene interconnect structures in ultra-large-scale integrated circuits (ULSIs), 3-D elastic-plastic finite element analysis (FEA) was carried out based on stress-temperature behavior of constituent thin films measured by a wafer curvature method. Two types of Cu interconnect geometries with either p-SiN cap/p-SiON etch-stop layers on p-SiCN: H cap/p-SiC: H etch-stop layers were analyzed. The effect of the Cu line width was also investigated. It was found from the FEA results that, regardless of the geometry, the hydrostatic tensile stress of Cu in the structure with p-SiCN: H/p-SiC: H layers was generally lower than that with p-SiN/p-SiON layers. It was also expected that, for the structure with p-SiN/p-SiON layers, SIV is most likely to occur near the via center while for the structure with p-SiCN: H/p-SiC: H layers, it is most likely to occur near the via bottom. In the structure with p-SiCN: H/p-SiC: H layers, it was considered that a larger line width is susceptible to voiding in the via due to a high hydrostatic stress gradient in the via and a high magnitude of equivalent plastic strain in the line.

Original languageEnglish
Pages (from-to)964-971
Number of pages8
JournalNippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Volume69
Issue number6
Publication statusPublished - 2003 Jun
Externally publishedYes

Fingerprint

Integrated circuits
Plastics
Finite element method
Linewidth
Geometry
Tensile stress
Plastic deformation
Thin films
Temperature

Keywords

  • Cu damascene interconnect
  • Elastic-plastic analysis
  • Finite element method
  • Intrinsic stress
  • LSI
  • Residual stress
  • Stress-induced voiding
  • Thermal stress
  • Thin film

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

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title = "3-Dimensional elastic-plastic finite element analysis of stress-induced voiding in Cu damascene interconnects of ultra-large-scale integrated circuits",
abstract = "In order to discuss stress-induced voiding (SIV) of Cu damascene interconnect structures in ultra-large-scale integrated circuits (ULSIs), 3-D elastic-plastic finite element analysis (FEA) was carried out based on stress-temperature behavior of constituent thin films measured by a wafer curvature method. Two types of Cu interconnect geometries with either p-SiN cap/p-SiON etch-stop layers on p-SiCN: H cap/p-SiC: H etch-stop layers were analyzed. The effect of the Cu line width was also investigated. It was found from the FEA results that, regardless of the geometry, the hydrostatic tensile stress of Cu in the structure with p-SiCN: H/p-SiC: H layers was generally lower than that with p-SiN/p-SiON layers. It was also expected that, for the structure with p-SiN/p-SiON layers, SIV is most likely to occur near the via center while for the structure with p-SiCN: H/p-SiC: H layers, it is most likely to occur near the via bottom. In the structure with p-SiCN: H/p-SiC: H layers, it was considered that a larger line width is susceptible to voiding in the via due to a high hydrostatic stress gradient in the via and a high magnitude of equivalent plastic strain in the line.",
keywords = "Cu damascene interconnect, Elastic-plastic analysis, Finite element method, Intrinsic stress, LSI, Residual stress, Stress-induced voiding, Thermal stress, Thin film",
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T1 - 3-Dimensional elastic-plastic finite element analysis of stress-induced voiding in Cu damascene interconnects of ultra-large-scale integrated circuits

AU - Saitoh, Takehiro

AU - Kawano, Masaya

AU - Ueno, Kazuyoshi

PY - 2003/6

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N2 - In order to discuss stress-induced voiding (SIV) of Cu damascene interconnect structures in ultra-large-scale integrated circuits (ULSIs), 3-D elastic-plastic finite element analysis (FEA) was carried out based on stress-temperature behavior of constituent thin films measured by a wafer curvature method. Two types of Cu interconnect geometries with either p-SiN cap/p-SiON etch-stop layers on p-SiCN: H cap/p-SiC: H etch-stop layers were analyzed. The effect of the Cu line width was also investigated. It was found from the FEA results that, regardless of the geometry, the hydrostatic tensile stress of Cu in the structure with p-SiCN: H/p-SiC: H layers was generally lower than that with p-SiN/p-SiON layers. It was also expected that, for the structure with p-SiN/p-SiON layers, SIV is most likely to occur near the via center while for the structure with p-SiCN: H/p-SiC: H layers, it is most likely to occur near the via bottom. In the structure with p-SiCN: H/p-SiC: H layers, it was considered that a larger line width is susceptible to voiding in the via due to a high hydrostatic stress gradient in the via and a high magnitude of equivalent plastic strain in the line.

AB - In order to discuss stress-induced voiding (SIV) of Cu damascene interconnect structures in ultra-large-scale integrated circuits (ULSIs), 3-D elastic-plastic finite element analysis (FEA) was carried out based on stress-temperature behavior of constituent thin films measured by a wafer curvature method. Two types of Cu interconnect geometries with either p-SiN cap/p-SiON etch-stop layers on p-SiCN: H cap/p-SiC: H etch-stop layers were analyzed. The effect of the Cu line width was also investigated. It was found from the FEA results that, regardless of the geometry, the hydrostatic tensile stress of Cu in the structure with p-SiCN: H/p-SiC: H layers was generally lower than that with p-SiN/p-SiON layers. It was also expected that, for the structure with p-SiN/p-SiON layers, SIV is most likely to occur near the via center while for the structure with p-SiCN: H/p-SiC: H layers, it is most likely to occur near the via bottom. In the structure with p-SiCN: H/p-SiC: H layers, it was considered that a larger line width is susceptible to voiding in the via due to a high hydrostatic stress gradient in the via and a high magnitude of equivalent plastic strain in the line.

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