3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

S. Murakami, Shinichi Tanaka, Y. Amamiya, H. Shimawaki, N. Goto, K. Honjo, Y. Ishida, Y. Saitoh, M. Yajima, Y. Hisada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages99-102
Number of pages4
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 1996 Nov 31996 Nov 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period96/11/396/11/6

Fingerprint

Heterojunction bipolar transistors
Power amplifiers
Frequency bands
Bandwidth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Murakami, S., Tanaka, S., Amamiya, Y., Shimawaki, H., Goto, N., Honjo, K., ... Hisada, Y. (1996). 3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 99-102). Piscataway, NJ, United States: IEEE.

3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier. / Murakami, S.; Tanaka, Shinichi; Amamiya, Y.; Shimawaki, H.; Goto, N.; Honjo, K.; Ishida, Y.; Saitoh, Y.; Yajima, M.; Hisada, Y.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). ed. / Anon. Piscataway, NJ, United States : IEEE, 1996. p. 99-102.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Murakami, S, Tanaka, S, Amamiya, Y, Shimawaki, H, Goto, N, Honjo, K, Ishida, Y, Saitoh, Y, Yajima, M & Hisada, Y 1996, 3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier. in Anon (ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, Piscataway, NJ, United States, pp. 99-102, Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, 96/11/3.
Murakami S, Tanaka S, Amamiya Y, Shimawaki H, Goto N, Honjo K et al. 3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier. In Anon, editor, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States: IEEE. 1996. p. 99-102
Murakami, S. ; Tanaka, Shinichi ; Amamiya, Y. ; Shimawaki, H. ; Goto, N. ; Honjo, K. ; Ishida, Y. ; Saitoh, Y. ; Yajima, M. ; Hisada, Y. / 3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). editor / Anon. Piscataway, NJ, United States : IEEE, 1996. pp. 99-102
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AU - Murakami, S.

AU - Tanaka, Shinichi

AU - Amamiya, Y.

AU - Shimawaki, H.

AU - Goto, N.

AU - Honjo, K.

AU - Ishida, Y.

AU - Saitoh, Y.

AU - Yajima, M.

AU - Hisada, Y.

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AB - A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

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