Abstract
A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.
| Original language | English |
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| Pages | 99-102 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA Duration: 1996 Nov 3 → 1996 Nov 6 |
Other
| Other | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
|---|---|
| City | Orlando, FL, USA |
| Period | 96/11/3 → 96/11/6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering