3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

S. Murakami, S. Tanaka, Y. Amamiya, H. Shimawaki, N. Goto, K. Honjo, Y. Ishida, Y. Saitoh, M. Yajima, Y. Hisada

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

Original languageEnglish
Pages99-102
Number of pages4
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 1996 Nov 31996 Nov 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period96/11/396/11/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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