40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

Y. Amamiya, Y. Suzuki, M. Kawanaka, K. Hosoya, Z. Yamazaki, M. Mamada, H. Takahashi, S. Wada, T. Kato, Y. Ikenaga, S. Tanaka, T. Takeuchi, H. Hida

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
Publication statusPublished - 2002 Jan 1
Event2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: 2002 Jun 22002 Jun 7

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Amamiya, Y., Suzuki, Y., Kawanaka, M., Hosoya, K., Yamazaki, Z., Mamada, M., Takahashi, H., Wada, S., Kato, T., Ikenaga, Y., Tanaka, S., Takeuchi, T., & Hida, H. (2002). 40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology. IEEE MTT-S International Microwave Symposium Digest, 1, 87-90.