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  • Hiroyasu Ishikawa
2016

Surface potential and topography measurements of gallium nitride on sapphire by scanning probe microscopy

Uruma, T., Satoh, N. & Ishikawa, H., 2016, In : IEEJ Transactions on Sensors and Micromachines. 136, 4, p. 96-101 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2018
2011

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

Ishikawa, H. & Shimanaka, K., 2011 Jan 15, In : Journal of Crystal Growth. 315, 1, p. 196-199 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2018
2017

Novel inkjet printing system and formation mechanism of PdO nanofilms for field-emission imaging devices

Kondo, H., Sato, T., Yamabe, J. & Ishikawa, H., 2017 Jul 21, In : Journal of Physics D: Applied Physics. 50, 32, 325106.

Research output: Contribution to journalArticle

1 Citation (Scopus)