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  • Kazushige Horio

Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Horio, K., Tanaka, T., Itagaki, K. & Nakajima, A., 2011 Mar, In : IEEE Transactions on Electron Devices. 58, 3, p. 698-703 6 p., 5667052.

Research output: Contribution to journalArticle

24 Citations (Scopus)
2014

Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

Onodera, H., Hanawa, H. & Horio, K., 2014, Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, Vol. 2. p. 499-502 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2012

Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Onodera, H. & Horio, K., 2012, European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. p. 401-404 4 p. 6483821

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Removal of surface-related current slump in field-plate GaAs FETs

Hafiz, F., Kumeno, M., Tanaka, T. & Horio, K., 2012, 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Simulation of removal of surface-state-related lag and current slump in GaAs FETs

Hafiz, H., Kumeno, M. & Horio, K., 2012, Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. p. 582-585 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Satoh, Y., Hanawa, H. & Horio, K., 2016 Dec 7, EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., p. 341-344 4 p. 7777560

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Onodera, H., Hanawa, H. & Horio, K., 2016, (Accepted/In press) In : Physica Status Solidi (C) Current Topics in Solid State Physics.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2011
36 Citations (Scopus)
2012

Buffer-related gate lag in AlGaN/GaN HEMTs

Nakajima, A., Fujii, K. & Horio, K., 2012 Jul, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 7, p. 1658-1660 3 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2015

Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs

Satoh, Y., Hanawa, H., Nakajima, A. & Horio, K., 2015 Mar 1, In : Japanese Journal of Applied Physics. 54, 3, 031002.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2012

Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs

Horio, K. & Onodera, H., 2012 Jul, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 7, p. 1655-1657 3 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2019

Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer's acceptor density

Akiyama, S., Kondo, M., Wada, L. & Horio, K., 2019 Jan 1, In : Japanese Journal of Applied Physics. 58, 6, 068003.

Research output: Contribution to journalArticle

Open Access
2017

Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers

Horio, K. & Hanawa, H., 2017, Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4. p. 39-42 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer

Kawada, Y., Hanawa, H. & Horio, K., 2017, Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4. p. 31-34 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2016

Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity

Satoh, Y., Hanawa, H. & Horio, K., 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. TechConnect, Vol. 4. p. 113-116 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017

Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Saito, Y., Tsurumaki, R., Noda, N. & Horio, K., 2017, Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, Vol. 4. p. 27-30 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-k Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura, T., Ueda, S., Kawada, Y. & Horio, K., 2018 Sep 1, In : IEEE Transactions on Electron Devices. 65, 9, p. 3848-3854 7 p., 8423447.

Research output: Contribution to journalArticle

13 Citations (Scopus)
2019

Analysis of Breakdown Voltages in AlGaN/GaN HEMTs with Low-Double Passivation Layers

Nakamura, K., Hanawa, H. & Horio, K., 2019 Jun 1, In : IEEE Transactions on Device and Materials Reliability. 19, 2, p. 298-303 6 p., 8660523.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2018

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

Kabemura, T., Hanawa, H. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4. p. 28-31 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017
4 Citations (Scopus)
2011

Simulation of field-plate effects on surface-state-related lag and current slump in GaAs FETs

Tanaka, T., Itagaki, K., Nakajima, A. & Horio, K., 2011, Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2. p. 595-598 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2013

Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs

Hafiz, F., Kumeno, M., Tanaka, T. & Horio, K., 2013, IEEE Region 10 Annual International Conference, Proceedings/TENCON. 6718452

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs

Onodera, H., Nakajima, A. & Horio, K., 2011, European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011. p. 45-48 4 p. 6102761

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2017

Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

Tsurumaki, R., Noda, N. & Horio, K., 2017 Jun 1, In : Microelectronics Reliability. 73, p. 36-41 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2012
30 Citations (Scopus)
2011

xNumerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

Nakajima, A., Fujii, K. & Horio, K., 2011 Oct, In : Japanese Journal of Applied Physics. 50, 10 PART 1

Research output: Contribution to journalArticle

14 Citations (Scopus)
2016

Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

Nomoto, A., Sato, Y. & Horio, K., 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. TechConnect, Vol. 4. p. 117-120 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

Simulation of current slump removal in field-plate GaAs MESFETs

Nomoto, A., Sato, Y. & Horio, K., 2015, NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Taylor and Francis Inc., Vol. 4. p. 270-273 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

Noda, N. & Horio, K., 2015, NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Taylor and Francis Inc., Vol. 4. p. 274-277 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2013

Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs

Horio, K., Onodera, H. & Fukai, T., 2013, Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Vol. 2. p. 497-500 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

Tsurumaki, R., Noda, N. & Horio, K., 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. TechConnect, Vol. 4. p. 121-124 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer

Hanawa, H. & Horio, K., 2014, In : Physica Status Solidi (A) Applications and Materials Science. 211, 4, p. 784-787 4 p.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

Nakajima, A., Fujii, K. & Horio, K., 2011 Oct 20, In : Jpn. J. Appl. Phys.. 50, p. 104303-1-104303-6

Research output: Contribution to journalArticle

2011

Two-dimensional analysis of field-plate effects on surface state-related current transients and power slump in GaAs FETs

Horio, K., Tanaka, T., Itagaki, K. & Nakajima, A., 2011 Mar 1, In : IEEE Trans. Electron Devices. 58, p. 698-703

Research output: Contribution to journalArticle

24 Citations (Scopus)
2013

Analysis of removal of surface-state-related lags and current slump in GaAs FETs

Hafiz, H., Kumeno, M. & Horio, K., 2013, In : IEEE Electron Device Letters. 34, 11, p. 1361-1363 3 p., 6603270.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2018

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

Ueda, S., Kawada, Y. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4. p. 24-27 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers

Nakano, K., Hanawa, H. & Horio, K., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, Vol. 4. p. 20-23 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2013

Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

Hanawa, H., Onodera, H., Nakajima, A. & Horio, K., 2013, IEEE International Reliability Physics Symposium Proceedings. 6532058

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2017
4 Citations (Scopus)
2013

Analysis of lags and current collapse in source-field-plate AlGaN/GaN high-electron-mobility transistors

Hanawa, H., Onodera, H. & Horio, K., 2013 Aug, In : Japanese Journal of Applied Physics. 52, 8 PART 2, 08JN21.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2015

Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Hanawa, H., Satoh, Y. & Horio, K., 2015 Nov 1, In : Microelectronic Engineering. 147, p. 96-99 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2018

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Nakamura, K., Hanawa, H. & Horio, K., 2018 Nov 27, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., p. 247-250 4 p. 8551096

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

Hanawa, H., Satoh, Y. & Horio, K., 2015, NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Taylor and Francis Inc., Vol. 4. p. 266-269 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer

Hanawa, H., Onodera, H., Nakajima, A. & Horio, K., 2014, In : IEEE Transactions on Electron Devices. 61, 3, p. 769-775 7 p., 6712055.

Research output: Contribution to journalArticle

40 Citations (Scopus)