A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF

Takashi Yokoyama, Yoshiaki Yamada, Koji Kishimoto, Tatsuya Usami, Hideaki Kawamoto, Kazuyoshi Ueno, Hideki Gomi

Research output: Contribution to journalArticle

Abstract

A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

Original languageEnglish
Pages (from-to)1140-1144
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
Publication statusPublished - 1998 Mar
Externally publishedYes

Fingerprint

random access memory
Plasma enhanced chemical vapor deposition
Masks
Etching
masks
etching
vapor deposition
aluminum
Aluminum
Data storage equipment
wiring
Silicon oxides
high resistance
Electric wiring
tapering
plugs
silicon oxides
Fluorine
Oxide films
fluorine

Keywords

  • Al etching
  • DRAM
  • PECVD
  • Photoresist
  • SiO
  • SiOF
  • Step height

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF. / Yokoyama, Takashi; Yamada, Yoshiaki; Kishimoto, Koji; Usami, Tatsuya; Kawamoto, Hideaki; Ueno, Kazuyoshi; Gomi, Hideki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 3 SUPPL. B, 03.1998, p. 1140-1144.

Research output: Contribution to journalArticle

@article{3cca51f4a65a4961b0289396dff93ce0,
title = "A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF",
abstract = "A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.",
keywords = "Al etching, DRAM, PECVD, Photoresist, SiO, SiOF, Step height",
author = "Takashi Yokoyama and Yoshiaki Yamada and Koji Kishimoto and Tatsuya Usami and Hideaki Kawamoto and Kazuyoshi Ueno and Hideki Gomi",
year = "1998",
month = "3",
language = "English",
volume = "37",
pages = "1140--1144",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3 SUPPL. B",

}

TY - JOUR

T1 - A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF

AU - Yokoyama, Takashi

AU - Yamada, Yoshiaki

AU - Kishimoto, Koji

AU - Usami, Tatsuya

AU - Kawamoto, Hideaki

AU - Ueno, Kazuyoshi

AU - Gomi, Hideki

PY - 1998/3

Y1 - 1998/3

N2 - A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

AB - A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

KW - Al etching

KW - DRAM

KW - PECVD

KW - Photoresist

KW - SiO

KW - SiOF

KW - Step height

UR - http://www.scopus.com/inward/record.url?scp=0343348081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343348081&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0343348081

VL - 37

SP - 1140

EP - 1144

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 SUPPL. B

ER -