Abstract
A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.
| Original language | English |
|---|---|
| Pages (from-to) | 1140-1144 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 3 SUPPL. B |
| Publication status | Published - 1998 Mar 1 |
Fingerprint
Keywords
- Al etching
- DRAM
- PECVD
- Photoresist
- SiO
- SiOF
- Step height
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Yokoyama, T., Yamada, Y., Kishimoto, K., Usami, T., Kawamoto, H., Ueno, K., & Gomi, H. (1998). A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37(3 SUPPL. B), 1140-1144.