A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF

Takashi Yokoyama; Yoshiaki Yamada; Koji Kishimoto; Tatsuya Usami; Hideaki Kawamoto; Kazuyoshi Ueno; Hideki Gomi

doi:10.1143/jjap.37.1140

A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF

Takashi Yokoyama, Yoshiaki Yamada, Koji Kishimoto, Tatsuya Usami, Hideaki Kawamoto, Kazuyoshi Ueno, Hideki Gomi

Research output: Contribution to journal › Article

Abstract

A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO₂ film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO₂ film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

Original language	English
Pages (from-to)	1140-1144
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1140
Publication status	Published - 1998 Mar

Keywords

Al etching
DRAM
PECVD
Photoresist
SiO
SiOF
Step height

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.1140

Fingerprint Dive into the research topics of 'A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO<sub>2</sub> mask Al etching and plasma enhanced chemical vapor deposition SiOF'. Together they form a unique fingerprint.

Cite this

Yokoyama, T., Yamada, Y., Kishimoto, K., Usami, T., Kawamoto, H., Ueno, K., & Gomi, H. (1998). A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37(3 SUPPL. B), 1140-1144. https://doi.org/10.1143/jjap.37.1140

A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF. / Yokoyama, Takashi; Yamada, Yoshiaki; Kishimoto, Koji; Usami, Tatsuya; Kawamoto, Hideaki; Ueno, Kazuyoshi; Gomi, Hideki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 3 SUPPL. B, 03.1998, p. 1140-1144.

Research output: Contribution to journal › Article

Yokoyama, T, Yamada, Y, Kishimoto, K, Usami, T, Kawamoto, H, Ueno, K & Gomi, H 1998, 'A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 37, no. 3 SUPPL. B, pp. 1140-1144. https://doi.org/10.1143/jjap.37.1140

Yokoyama T, Yamada Y, Kishimoto K, Usami T, Kawamoto H, Ueno K et al. A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 Mar;37(3 SUPPL. B):1140-1144. https://doi.org/10.1143/jjap.37.1140

Yokoyama, Takashi ; Yamada, Yoshiaki ; Kishimoto, Koji ; Usami, Tatsuya ; Kawamoto, Hideaki ; Ueno, Kazuyoshi ; Gomi, Hideki. / A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO₂ mask Al etching and plasma enhanced chemical vapor deposition SiOF. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 ; Vol. 37, No. 3 SUPPL. B. pp. 1140-1144.

@article{3cca51f4a65a4961b0289396dff93ce0,

title = "A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF",

abstract = "A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.",

keywords = "Al etching, DRAM, PECVD, Photoresist, SiO, SiOF, Step height",

author = "Takashi Yokoyama and Yoshiaki Yamada and Koji Kishimoto and Tatsuya Usami and Hideaki Kawamoto and Kazuyoshi Ueno and Hideki Gomi",

year = "1998",

month = mar,

doi = "10.1143/jjap.37.1140",

language = "English",

volume = "37",

pages = "1140--1144",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 SUPPL. B",

}

TY - JOUR

T1 - A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF

AU - Yokoyama, Takashi

AU - Yamada, Yoshiaki

AU - Kishimoto, Koji

AU - Usami, Tatsuya

AU - Kawamoto, Hideaki

AU - Ueno, Kazuyoshi

AU - Gomi, Hideki

PY - 1998/3

Y1 - 1998/3

N2 - A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

AB - A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

KW - Al etching

KW - DRAM

KW - PECVD

KW - Photoresist

KW - SiO

KW - SiOF

KW - Step height

UR - http://www.scopus.com/inward/record.url?scp=0343348081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343348081&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.1140

DO - 10.1143/jjap.37.1140

M3 - Article

AN - SCOPUS:0343348081

VL - 37

SP - 1140

EP - 1144

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 SUPPL. B

ER -