Abstract
A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.
| Original language | English |
|---|---|
| Pages (from-to) | 1140-1144 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 3 SUPPL. B |
| Publication status | Published - 1998 Mar |
| Externally published | Yes |
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Keywords
- Al etching
- DRAM
- PECVD
- Photoresist
- SiO
- SiOF
- Step height
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF. / Yokoyama, Takashi; Yamada, Yoshiaki; Kishimoto, Koji; Usami, Tatsuya; Kawamoto, Hideaki; Ueno, Kazuyoshi; Gomi, Hideki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 3 SUPPL. B, 03.1998, p. 1140-1144.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF
AU - Yokoyama, Takashi
AU - Yamada, Yoshiaki
AU - Kishimoto, Koji
AU - Usami, Tatsuya
AU - Kawamoto, Hideaki
AU - Ueno, Kazuyoshi
AU - Gomi, Hideki
PY - 1998/3
Y1 - 1998/3
N2 - A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.
AB - A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.
KW - Al etching
KW - DRAM
KW - PECVD
KW - Photoresist
KW - SiO
KW - SiOF
KW - Step height
UR - http://www.scopus.com/inward/record.url?scp=0343348081&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343348081&partnerID=8YFLogxK
M3 - Article
VL - 37
SP - 1140
EP - 1144
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 SUPPL. B
ER -