Abstract
A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.
Original language | English |
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Pages (from-to) | 1140-1144 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 37 |
Issue number | 3 SUPPL. B |
DOIs | |
Publication status | Published - 1998 Mar |
Externally published | Yes |
Keywords
- Al etching
- DRAM
- PECVD
- Photoresist
- SiO
- SiOF
- Step height
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)