A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Keiichi Numata, Yuji Takahashi, Tadashi Maeda, Hikaru Hida

Research output: Contribution to conferencePaper

7 Citations (Scopus)

Abstract

We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

Original languageEnglish
Pages141-144
Number of pages4
Publication statusPublished - 2002 Jan 1
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: 2002 Jun 22002 Jun 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CitySeatle, WA
Period02/6/202/6/4

ASJC Scopus subject areas

  • Engineering(all)

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    Numata, K., Takahashi, Y., Maeda, T., & Hida, H. (2002). A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. 141-144. Paper presented at 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States.