A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Keiichi Numata, Yuji Takahashi, Tadashi Maeda, Hikaru Hida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Pages141-144
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: 2002 Jun 22002 Jun 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CitySeatle, WA
Period02/6/202/6/4

Fingerprint

Global system for mobile communications
Poles
Switches
Antennas
Voltage control
Networks (circuits)
Electric potential
Insertion losses
Resistors
Transmitters
Capacitors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

Cite this

Numata, K., Takahashi, Y., Maeda, T., & Hida, H. (2002). A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. In IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 141-144)

A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. / Numata, Keiichi; Takahashi, Yuji; Maeda, Tadashi; Hida, Hikaru.

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 141-144.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Numata, K, Takahashi, Y, Maeda, T & Hida, H 2002, A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. in IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. pp. 141-144, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States, 02/6/2.
Numata K, Takahashi Y, Maeda T, Hida H. A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. In IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 141-144
Numata, Keiichi ; Takahashi, Yuji ; Maeda, Tadashi ; Hida, Hikaru. / A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. pp. 141-144
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