A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit

Shinichi Tanaka, Takanori Noguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a novel FET rectifier using one-port composite right-/left-handed transmission line as gate control circuit (GCC). The circuit is extremely compact and yet can control the gate impedance both at the fundamental frequency and at the 2nd harmonic frequency for self-synchronous operation of the rectifier. The prototype 2.45-GHz GaN FET rectifier rectified RF power of 34 dBm with RF-DC efficiency of 64% (without correcting for reflection). Compared with the rectifier using microstrip-based circuit, the proposed rectifier performed just as good, or even better, in terms of efficiency and bandwidth. The class-B FET rectifier of this work can potentially operate with higher efficiency by harmonic tuning at the drain circuit.

Original languageEnglish
Title of host publication2019 49th European Microwave Conference, EuMC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages595-598
Number of pages4
ISBN (Electronic)9782874870552
DOIs
Publication statusPublished - 2019 Oct
Event49th European Microwave Conference, EuMC 2019 - Paris, France
Duration: 2019 Oct 12019 Oct 3

Publication series

Name2019 49th European Microwave Conference, EuMC 2019

Conference

Conference49th European Microwave Conference, EuMC 2019
Country/TerritoryFrance
CityParis
Period19/10/119/10/3

Keywords

  • composite right-/left-handed transmission line
  • harmonic tuning
  • power amplifier
  • rectifier

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation

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