A 7-Mask CMOS Process with Selective Oxide Deposition

T.Horiuchi T.Horiuchi, K.Kanba K.Kanba, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)1455-1460
JournalIEEE Transaction on Electron Devices
Volume40
Publication statusPublished - 1993 Aug 1

Cite this

T.Horiuchi, T. H., K.Kanba, K. K., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O., & Homma, T. (1993). A 7-Mask CMOS Process with Selective Oxide Deposition. IEEE Transaction on Electron Devices, 40, 1455-1460.

A 7-Mask CMOS Process with Selective Oxide Deposition. / T.Horiuchi, T.Horiuchi; K.Kanba, K.Kanba; T.Homma, T.Homma; Y.Murao, Y.Murao; K.Okumura, K.Okumura; Homma, Tetsuya.

In: IEEE Transaction on Electron Devices, Vol. 40, 01.08.1993, p. 1455-1460.

Research output: Contribution to journalArticle

T.Horiuchi, TH, K.Kanba, KK, T.Homma, TH, Y.Murao, YM, K.Okumura, KO & Homma, T 1993, 'A 7-Mask CMOS Process with Selective Oxide Deposition', IEEE Transaction on Electron Devices, vol. 40, pp. 1455-1460.
T.Horiuchi TH, K.Kanba KK, T.Homma TH, Y.Murao YM, K.Okumura KO, Homma T. A 7-Mask CMOS Process with Selective Oxide Deposition. IEEE Transaction on Electron Devices. 1993 Aug 1;40:1455-1460.
T.Horiuchi, T.Horiuchi ; K.Kanba, K.Kanba ; T.Homma, T.Homma ; Y.Murao, Y.Murao ; K.Okumura, K.Okumura ; Homma, Tetsuya. / A 7-Mask CMOS Process with Selective Oxide Deposition. In: IEEE Transaction on Electron Devices. 1993 ; Vol. 40. pp. 1455-1460.
@article{acba575c152d4a08a6a8b7dd01d2dee1,
title = "A 7-Mask CMOS Process with Selective Oxide Deposition",
author = "T.Horiuchi T.Horiuchi and K.Kanba K.Kanba and T.Homma T.Homma and Y.Murao Y.Murao and K.Okumura K.Okumura and Tetsuya Homma",
year = "1993",
month = "8",
day = "1",
language = "English",
volume = "40",
pages = "1455--1460",
journal = "IEEE Transaction on Electron Devices",

}

TY - JOUR

T1 - A 7-Mask CMOS Process with Selective Oxide Deposition

AU - T.Horiuchi, T.Horiuchi

AU - K.Kanba, K.Kanba

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - K.Okumura, K.Okumura

AU - Homma, Tetsuya

PY - 1993/8/1

Y1 - 1993/8/1

M3 - Article

VL - 40

SP - 1455

EP - 1460

JO - IEEE Transaction on Electron Devices

JF - IEEE Transaction on Electron Devices

ER -